公开(公告)号：US20110216554A1

公开(公告)日：2011-09-08

申请号：US12876675

申请日：2010-09-07

Applicant: Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Rei Hashimoto ,  Jongil Hwang ,  Maki Sugai ,  Takanobu Ueno ,  Junichi Kinoshita ,  Misaki Ueno

Inventor： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Rei Hashimoto ,  Jongil Hwang ,  Maki Sugai ,  Takanobu Ueno ,  Junichi Kinoshita ,  Misaki Ueno

IPC: F21V7/22

CPC classification number: F21V7/22

Abstract: An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.

Abstract translation: 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。 发光器件具有发射激光束的半导体激光二极管。 该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射， 导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。 发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。 并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

公开(公告)号：US20110215293A1

公开(公告)日：2011-09-08

申请号：US12874475

申请日：2010-09-02

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/04

CPC classification number: H01L33/22 ,  H01L33/04 ,  H01L33/06

Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

Abstract translation: 某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域， 氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。 在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

公开(公告)号：US20110215291A1

公开(公告)日：2011-09-08

申请号：US12873586

申请日：2010-09-01

Applicant: Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L31/0256 ,  H01L31/0352

CPC classification number: H01L31/022466 ,  B82Y20/00 ,  H01L31/035236 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.

Abstract translation: 根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。 半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

公开(公告)号：US20110204394A1

公开(公告)日：2011-08-25

申请号：US12875503

申请日：2010-09-03

Applicant: Toshiki HIKOSAKA ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

Inventor： Toshiki HIKOSAKA ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC: H01L33/30 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

Abstract translation: 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0

公开(公告)号：US07993948B2

公开(公告)日：2011-08-09

申请号：US12539275

申请日：2009-08-11

Applicant: Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

Inventor： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC: H01L21/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

Abstract: A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.

Abstract translation: 一种通过（i）在p型半导体层上沉积钯膜来制造电极的方法; （ii）将氧气引入到钯膜上以提供氧气氛; （iii）通过在氧环境中退火钯膜来氧化与半导体层相邻的钯膜; 和（iv）直接与半导体层接触形成氧化钯膜。

公开(公告)号：US20110101851A1

公开(公告)日：2011-05-05

申请号：US12985955

申请日：2011-01-06

Applicant: Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

Inventor： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

IPC: H01J1/62

CPC classification number: H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

Abstract: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

Abstract translation: 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

公开(公告)号：US20110051769A1

公开(公告)日：2011-03-03

申请号：US12719468

申请日：2010-03-08

Applicant: Maki SUGAI ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

Inventor： Maki SUGAI ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

IPC: H01S5/323 ,  H01S5/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/164 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3063 ,  H01S2301/18

Abstract: A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion

Abstract translation: 一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。 发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。 第二半导体层包括脊部和宽部。 沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。 沿着第二方向的宽部的宽度比脊部宽。 沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

公开(公告)号：US07884538B2

公开(公告)日：2011-02-08

申请号：US12143382

申请日：2008-06-20

Applicant: Iwao Mitsuishi ,  Shinya Nunoue ,  Yasushi Hattori

Inventor： Iwao Mitsuishi ,  Shinya Nunoue ,  Yasushi Hattori

IPC: H01J1/62

CPC classification number: H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

Abstract: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

Abstract translation: 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

公开(公告)号：US07773648B2

公开(公告)日：2010-08-10

申请号：US11365531

申请日：2006-03-02

Applicant: Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

IPC: H01S3/04 ,  H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3216

Abstract: Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.

Abstract translation: 这里公开了高可靠性半导体器件。 激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层 设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。 由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

Applicant: Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

Inventor： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/02 ,  H01L33/16

Abstract: A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

Abstract translation: 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。