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18 条记录 (耗时 0.042 秒)

    LIGHT-EMITTING DEVICE
    1.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110101851A1

    公开(公告)日：2011-05-05

    申请号：US12985955

    申请日：2011-01-06

    申请人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    发明人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20090058256A1

    公开(公告)日：2009-03-05

    申请号：US12143382

    申请日：2008-06-20

    申请人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    发明人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    半导体激光器件及其制造方法

    公开(公告)号：US20110216798A1

    公开(公告)日：2011-09-08

    申请号：US12873821

    申请日：2010-09-01

    申请人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

    发明人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

    IPC分类号： H01S5/22 ,  H01S5/323 ,  H01L33/30

    CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

    摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

    摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下 。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20100246628A1

    公开(公告)日：2010-09-30

    申请号：US12729636

    申请日：2010-03-23

    申请人： Yasushi HATTORI ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

    发明人： Yasushi HATTORI ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

    IPC分类号： H01S5/026

    CPC分类号： H01S5/02296 ,  H01S5/005 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/02216 ,  H01S5/0228 ,  H01S5/32341 ,  H01S5/327

    摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.

    摘要翻译： 公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极 所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上， 可见光发射器与封装件接触。

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20110216554A1

    公开(公告)日：2011-09-08

    申请号：US12876675

    申请日：2010-09-07

    申请人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Rei Hashimoto ,  Jongil Hwang ,  Maki Sugai ,  Takanobu Ueno ,  Junichi Kinoshita ,  Misaki Ueno

    发明人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Rei Hashimoto ,  Jongil Hwang ,  Maki Sugai ,  Takanobu Ueno ,  Junichi Kinoshita ,  Misaki Ueno

    IPC分类号： F21V7/22

    CPC分类号： F21V7/22

    摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.

    摘要翻译： 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。 发光器件具有发射激光束的半导体激光二极管。 该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射， 导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。 发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。 并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

    LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20110157864A1

    公开(公告)日：2011-06-30

    申请号：US12876774

    申请日：2010-09-07

    申请人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

    发明人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

    IPC分类号： F21V9/16

    CPC分类号： F21K9/68 ,  G02F1/133615 ,  G02F2001/133614

    摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.

    摘要翻译： 根据实施例，提供了一种发光器件。 发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光 光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。