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    LIGHT-EMITTING DEVICE
    1.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110101851A1

    公开(公告)日：2011-05-05

    申请号：US12985955

    申请日：2011-01-06

    申请人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    发明人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20090058256A1

    公开(公告)日：2009-03-05

    申请号：US12143382

    申请日：2008-06-20

    申请人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    发明人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT EMITTING DEVICE
    5.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110147776A1

    公开(公告)日：2011-06-23

    申请号：US12874839

    申请日：2010-09-02

    申请人： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

    发明人： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

    IPC分类号： H01L33/58

    CPC分类号： H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

    摘要翻译： 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

    LIGHT EMITTING DEVICE
    6.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20120056527A1

    公开(公告)日：2012-03-08

    申请号：US13034137

    申请日：2011-02-24

    申请人： Iwao MITSUISHI ,  Kunio ISHIDA ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Keiko ALBESSARD ,  Shinya NUNOUE

    发明人： Iwao MITSUISHI ,  Kunio ISHIDA ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Keiko ALBESSARD ,  Shinya NUNOUE

    IPC分类号： H01J1/62

    CPC分类号： C09K11/7734 ,  C09K11/7728 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1−x1Eux1)aSibAlOcNd  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements),an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r (μm)≧D(r+1000) (μm).  (2)

    摘要翻译： 根据一个实施例的发光器件包括板; 安装在所述板上的发光元件，发射波长为250nm至500nm的光; 形成在元件上的红色荧光层，包括由等式（1）表示的具有直径为r的半圆形形状的红色荧光体; （M1-x1Eux1）aSibAlOcNd（1）（在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，Al（Aliminum）以外的IIIB族元素，稀土元素 和IVB族元素），形成在红色荧光层上的由透明树脂制成的具有直径D的半圆形状的中间层; 以及形成在具有半圆形状的绿色荧光体的中间层上形成的绿色荧光体层。 直径r和直径D之间的关系满足式（2）：2.0r（μm）≥D（r + 1000）（μm）。 （2）

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20120056216A1

    公开(公告)日：2012-03-08

    申请号：US13214608

    申请日：2011-08-22

    申请人： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

    发明人： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

    IPC分类号： H01L27/15

    CPC分类号： H01L25/0753 ,  C09K11/0883 ,  C09K11/7734 ,  G09F13/20 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

    摘要翻译： 根据一个实施例的发光器件包括：板; 多个第一发光单元，每个包括形成在具有绿色荧光体的第一发光元件上的第一发光元件和第一荧光层; 多个第二发光单元，每个包括形成在具有红色荧光体的第二发光元件上的第二发光元件和第二荧光层; 第二荧光层和第一荧光层以介于其间的气体以非接触方式分离; 以及多个第三发光单元，每个包括第三发光元件和形成在第三发光元件上的树脂层，其中没有绿色荧光体和红色荧光体，第三发光单元设置在第一发光单元和第二发光单元之间 发光单元。

    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    半导体激光器件及其制造方法

    公开(公告)号：US20110216798A1

    公开(公告)日：2011-09-08

    申请号：US12873821

    申请日：2010-09-01

    申请人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

    发明人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

    IPC分类号： H01S5/22 ,  H01S5/323 ,  H01L33/30

    CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

    摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

    摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下 。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130087805A1

    公开(公告)日：2013-04-11

    申请号：US13404531

    申请日：2012-02-24

    申请人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

    发明人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

    IPC分类号： H01L29/20

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。