公开(公告)号：US20080230853A1

公开(公告)日：2008-09-25

申请号：US11987250

申请日：2007-11-28

Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Jae-Eun Jung ,  Yong-Wan Jin

Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Jae-Eun Jung ,  Yong-Wan Jin

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0525 ,  H01L51/0558 ,  Y10S977/762

Abstract: In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.

Abstract translation: 在晶体管及其制造方法中，晶体管包括布置在基板上的沟道层，形成在基板上的源电极和漏电极，以便与沟道层的各个端部接触，围绕 源电极和漏电极之间的沟道层，以及围绕栅极绝缘层的栅电极。

公开(公告)号：US20080166640A1

公开(公告)日：2008-07-10

申请号：US11896273

申请日：2007-08-30

Applicant: Chan-wook Baik ,  Yong-wan Jin ,  Gun-sik Park ,  Jong-min Kim ,  Young-min Shin ,  Jin-kyu So

Inventor： Chan-wook Baik ,  Yong-wan Jin ,  Gun-sik Park ,  Jong-min Kim ,  Young-min Shin ,  Jin-kyu So

IPC: G03C5/00 ,  B05D5/06

CPC classification number: G03F7/00 ,  G03F1/22 ,  G03F9/7053 ,  G03F9/7076

Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process. The method for manufacturing the microstructure using the LIGA process contemplates forming a substrate for the microstructure, a plurality of photosensitive layers, each photosensitive layer having a plating hole and an aligning pinhole, and an aligning pin capable of being inserted into the aligning pinhole, with the aligning pinholes of the photosensitive layers being formed in corresponding positions, and repeating a process of stacking the photosensitive layer on the substrate for the microstructure and a process of forming a plating layer by plating the plating hole of the stacked photosensitive layer with a metal for a number of times corresponding to the number of the photosensitive layers, and when the photosensitive layers are stacked on the substrate for the structure, the photosensitive layers being aligned with one another by inserting the aligning pin into the aligning pinholes of all the photosensitive layers stacked on the substrate for the microstructure to penetrate all the photosensitive layers.

Abstract translation: 用于石版印刷，Galvanofomung和Abformung（LIGA）工艺的掩模，用于制造掩模的方法以及使用LIGA工艺制造微结构的方法。 使用LIGA方法制造微结构的方法考虑形成用于微结构的基底，多个感光层，每个感光层具有电镀孔和对准针孔，以及能够插入到对准针孔中的对准销， 感光层的对准针孔形成在相应的位置上，并且重复将用于微结构的基板上的感光层层叠的工艺和通过用金属镀覆层叠的感光层的电镀孔来形成镀层的工艺 对应于感光层的数量的次数，并且当感光层堆叠在用于结构的基板上时，感光层通过将对准销插入到所有感光层的对准针孔中而彼此对准 在基板上用于微结构穿透 将感光层。

公开(公告)号：US20080164805A1

公开(公告)日：2008-07-10

申请号：US11987384

申请日：2007-11-29

Applicant: Byong-gwon Song ,  Seung-nam Cha ,  Sun-il Kim ,  Ho-suk Kang ,  Yong-wan Jin ,  Min-jong Bae

Inventor： Byong-gwon Song ,  Seung-nam Cha ,  Sun-il Kim ,  Ho-suk Kang ,  Yong-wan Jin ,  Min-jong Bae

IPC: H01J1/62

CPC classification number: H01J31/127 ,  G02F1/133604 ,  G02F2001/133607 ,  G02F2001/133625 ,  H01J29/08 ,  H01J61/025 ,  H01J63/06

Abstract: Provided is an anode panel of a field emission type backlight unit. The anode panel includes a substrate, an anode formed on a lower surface of the substrate, a phosphor layer coated on a lower surface of the anode and a liquid pack disposed on an upper surface of the substrate, said liquid pack having a transparent cover having cylindrical lens type curved portions and transparent liquid filling in the curved portions.

Abstract translation: 提供了场发射型背光单元的阳极面板。 所述阳极面板包括基板，形成在所述基板的下表面上的阳极，涂覆在所述阳极的下表面上的荧光体层和设置在所述基板的上表面上的液体组件，所述液体组件具有透明盖，所述透明盖具有 柱面透镜型弯曲部分和透明液体填充在弯曲部分中。

公开(公告)号：US20080150043A1

公开(公告)日：2008-06-26

申请号：US11826170

申请日：2007-07-12

Applicant: Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

Inventor： Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/42372 ,  H01L21/2652 ,  H01L21/2807 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/515 ,  H01L29/6659

Abstract: A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.

Abstract translation: 晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。 其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

公开(公告)号：US20070229003A1

公开(公告)日：2007-10-04

申请号：US11510580

申请日：2006-08-28

Applicant: Shang-Hyeun Park ,  Chan-Wook Baik ,  Jeong-Hee Lee ,  Yong-Wan Jin

Inventor： Shang-Hyeun Park ,  Chan-Wook Baik ,  Jeong-Hee Lee ,  Yong-Wan Jin

IPC: H01J1/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J63/06

Abstract: A field emission type backlight unit and a method of manufacturing the same. The field emission type backlight unit includes a lower substrate, a plurality of cathode electrodes formed on the lower substrate, a plurality of insulating layers formed in a line shape on the lower substrate and the cathode electrodes, a plurality of gate electrodes formed on the insulating layers, and at least one emitter formed of an electron emission material on each cathode electrode between the insulating layers.

Abstract translation: 场发射型背光单元及其制造方法。 场致发射型背光单元包括下基板，形成在下基板上的多个阴极电极，在下基板上形成为线状的多个绝缘层和阴极电极，形成在绝缘体上的多个栅电极 以及在绝缘层之间的每个阴极电极上由电子发射材料形成的至少一个发射体。

公开(公告)号：US20070228928A1

公开(公告)日：2007-10-04

申请号：US11655153

申请日：2007-01-19

Applicant: Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

Inventor： Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

IPC: H01J1/62

CPC classification number: H01J9/385 ,  H01J31/127 ,  H01J2329/941

Abstract: A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.

Abstract translation: 提供了一种具有真空排气密封结构的场发射显示装置和场发射型背光装置。 场致发射显示装置由阴极基板和阳极基板构成，彼此相邻并且彼此面对，并且在其间形成真空排空的面板空间以产生视觉图像。 此外，场致发射显示装置构造有沿着阴极基板和阳极基板的边缘设置的密封构件，以密封面板空间。 在密封构件中形成有至少一个暴露于面板空间的入口和入口与场致发射显示装置的外部连通的排气通道。 根据本发明的场致发射显示装置和场发射型背光装置的制造工艺数量减少，并且适合于紧凑，纤薄和轻便的设计，并且通过具有用于真空排气的密封结构的大屏幕。

公开(公告)号：US20070051970A1

公开(公告)日：2007-03-08

申请号：US11408054

申请日：2006-04-21

Applicant: Jae-Eun Jang ,  Seung-nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

Inventor： Jae-Eun Jang ,  Seung-nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC: H01L29/74

CPC classification number: B81C1/00111 ,  B81B3/0086 ,  B81B2201/018 ,  H01H1/0094 ,  Y10S977/762 ,  Y10T29/49105

Abstract: A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.

Abstract translation: 具有改进的结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。 纳米线机电装置包括：绝缘基板; 第一和第三电极在绝缘基板上彼此间隔开，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。

公开(公告)号：US20060192475A1

公开(公告)日：2006-08-31

申请号：US11244106

申请日：2005-10-06

Applicant: Hang-Woo Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Ha-Jin Kim ,  Min-Jong Bae

Inventor： Hang-Woo Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Ha-Jin Kim ,  Min-Jong Bae

IPC: H01J1/14 ,  H01J63/04

CPC classification number: H01J29/481 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/89

Abstract: A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

公开(公告)号：US07078007B2

公开(公告)日：2006-07-18

申请号：US10353936

申请日：2003-01-30

Applicant: Se-gi Yu ,  Whi-kun Yi ,  Jeong-hee Lee ,  Yong-wan Jin ,  Tae-won Jeong

Inventor： Se-gi Yu ,  Whi-kun Yi ,  Jeong-hee Lee ,  Yong-wan Jin ,  Tae-won Jeong

IPC: D01F9/12

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  Y10S977/742 ,  Y10T428/2982

Abstract: A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

公开(公告)号：US20050166960A1

公开(公告)日：2005-08-04

申请号：US11047627

申请日：2005-02-02

Applicant: Yong-Wan Jin ,  Jong-Min Kim

Inventor： Yong-Wan Jin ,  Jong-Min Kim

IPC: H01L31/04 ,  H01G9/20 ,  H01L31/00 ,  H01L51/00 ,  H01L51/30 ,  H01M4/90 ,  H01M4/96 ,  H01M6/30 ,  H01M14/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01G9/2027 ,  H01G9/2031 ,  H01L51/0048 ,  H01L51/0052 ,  H01M4/9016 ,  H01M4/96 ,  H01M14/005 ,  Y02E10/542

Abstract: A particulate structure containing a carbon nanotube thus exhibiting improved electron-transferring property, a semiconductor electrode for a photoelectrochemical cell containing a carbon nanotube thus exhibiting improved electron-transferring property, an electrolytic solution for a photoelectrochemical cell containing a carbon nanotube thus exhibiting improved oxidation-reduction property, a reduction electrode for a photoelectrochemical cell containing a carbon nanotube thus exhibiting improved reduction property; and a photoelectrochemical cell applying at least one aspect above.

Abstract translation: 含有碳纳米管的颗粒结构，因此具有改善的电子传递性能，含有碳纳米管的光电化学电池的半导体电极，因此具有改善的电子传递性能，含有碳纳米管的光电化学电池的电解液， 还原性能，含有碳纳米管的光电化学电池的还原电极，因此具有改进的还原性能; 和至少应用至少一个方面的光电化学电池。