公开(公告)号：US20240229233A1

公开(公告)日：2024-07-11

申请号：US18402243

申请日：2024-01-02

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Eric Jen Cheng Liu ,  Eric James Shero

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/407 ,  C23C16/403 ,  C23C16/4408 ,  C23C16/448 ,  C23C16/45553

Abstract: A method can comprise providing a zinc precursor to a reaction chamber comprising a substrate disposed therein; providing an oxygen species to the reaction chamber; forming a zinc oxide layer on the substrate in response to providing the zinc precursor and providing the oxygen species; and/or mitigating agglomeration of the zinc oxide layer. Mitigating agglomeration of the zinc oxide layer can comprise forming a capping layer on an outer surface of the zinc oxide layer such that the outer surface of the zinc oxide layer is not exposed to ambient oxygen, doping the zinc oxide layer with another material, and/or applying a post-deposition treatment to the zinc oxide layer.

公开(公告)号：US20240191352A1

公开(公告)日：2024-06-13

申请号：US18530321

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Jacqueline Wrench ,  Paul Ma ,  Todd Robert Dunn ,  Jonathan Bakke ,  Eric James Shero ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4485 ,  C23C16/45561

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

公开(公告)号：US11926895B2

公开(公告)日：2024-03-12

申请号：US17583371

申请日：2022-01-25

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/32 ,  H01L21/28 ,  H01L29/49

CPC classification number: C23C16/45525 ,  C23C16/32 ,  H01L21/28088 ,  H01L29/49 ,  H01L29/4966

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US11901175B2

公开(公告)日：2024-02-13

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/24 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32724 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02315 ,  H01L21/68714 ,  H01L21/76897 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02208 ,  H01L21/67184

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US11885013B2

公开(公告)日：2024-01-30

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  H01L29/43 ,  C23C16/52

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

公开(公告)号：US20230313370A1

公开(公告)日：2023-10-05

申请号：US18332627

申请日：2023-06-09

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero ,  Carl Louis White ,  Mohith E. Verghese ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: C23C16/448 ,  H01L21/67

CPC classification number: C23C16/4485 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

Abstract: Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

公开(公告)号：US11773486B2

公开(公告)日：2023-10-03

申请号：US18163144

申请日：2023-02-01

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero ,  Carl Louis White ,  Mohith E. Verghese ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: H01L21/67 ,  C23C16/448

CPC classification number: C23C16/4485 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

Abstract: Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

公开(公告)号：US20230235454A1

公开(公告)日：2023-07-27

申请号：US18296039

申请日：2023-04-05

Applicant: ASM IP HOLDING B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/448 ,  C23C16/45561 ,  C23C16/45544 ,  C23C16/481

Abstract: Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

公开(公告)号：US20230197796A1

公开(公告)日：2023-06-22

申请号：US17660389

申请日：2022-04-22

Applicant: ASM IP HOLDING B.V.

Inventor： Fu Tang ,  Eric James Shero ,  Gejian Zhao ,  Eric Jen Cheng Liu

IPC: H01L29/40 ,  H01L21/28

CPC classification number: H01L29/401 ,  H01L21/28088

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

公开(公告)号：US20230183861A1

公开(公告)日：2023-06-15

申请号：US18163144

申请日：2023-02-01

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero ,  Carl Louis White ,  Mohith E. Verghese ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: C23C16/448 ,  H01L21/67

CPC classification number: C23C16/4485 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

Abstract: Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.