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235 条记录 (耗时 0.038 秒)

    Lighting elements composed of polyesters
    92.
    发明授权
    Lighting elements composed of polyesters 有权
    由聚酯组成的照明元件

    公开(公告)号：US08440761B2

    公开(公告)日：2013-05-14

    申请号：US11994937

    申请日：2006-07-13

    申请人： Andreas Eipper ,  Martin Weber ,  Carsten Weiss

    发明人： Andreas Eipper ,  Martin Weber ,  Carsten Weiss

    IPC分类号： C08L67/00 ,  C08F12/08

    CPC分类号： C08L67/02 ,  C08L25/14 ,  C08L2666/06

    摘要： Lighting elements composed of thermoplastic molding compositions comprising A) from 10 to 99.9% by weight of at least one thermoplastic polyester, B) from 0.1 to 50% by weight of at least one terpolymer, obtainable from b1) at least one vinylaromatic monomer, b2) at least one C1-C4-alkyl (meth)acrylate or (meth)acrylonitrile, and b3) from 0.1 to 10% by weight, based on the total weight of the components b1) to b3), of at least one monomer which comprises an α,β-unsaturated anhydride, and C) from 0 to 60% by weight of other additives, where the total of the percentages by weight of components A) to C) is 100%.

    摘要翻译： 由热塑性模塑组合物组成的照明元件，其包含A）10至99.9重量％的至少一种热塑性聚酯，B）0.1至50重量％的至少一种三元共聚物，可由b1）至少一种乙烯基芳族单体，b2 ）至少一种（甲基）丙烯酸C 1 -C 4烷基酯或（甲基）丙烯腈，和b3）基于组分b1）至b3）的总重量为0.1至10重量％的至少一种单体， 包括α，β-不饱和酸酐和C）0至60重量％的其它添加剂，其中组分A）至C）的重量百分比的总和为100％。

    Semiconductor wafer composed of monocrystalline silicon and method for producing it
    93.
    发明授权
    Semiconductor wafer composed of monocrystalline silicon and method for producing it 有权
    由单晶硅组成的半导体晶片及其制造方法

    公开(公告)号：US08398766B2

    公开(公告)日：2013-03-19

    申请号：US12548862

    申请日：2009-08-27

    申请人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

    发明人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

    IPC分类号： C30B15/02

    CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  C30B15/305 ,  C30B30/04 ,  C30B33/02

    摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

    摘要翻译： 由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和Pv区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片具有小于10cm -2的OSF密度，至少3.5×10 8 cm -3的本体的BMD密度以及具有不大于3的波动范围BMDmax / BMDmin的BMD密度的径向分布 通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

    PROCESS FOR PRODUCING THERMOPLASTIC MOLDING COMPOSITIONS BASED ON STYRENE COPOLYMERS AND POLYAMIDE WITH IMPROVED TOUGHNESS
    95.
    发明申请
    PROCESS FOR PRODUCING THERMOPLASTIC MOLDING COMPOSITIONS BASED ON STYRENE COPOLYMERS AND POLYAMIDE WITH IMPROVED TOUGHNESS 失效
    基于苯乙烯共聚物和具有改善的韧性的聚酰胺制造热塑性成型组合物的方法

    公开(公告)号：US20130023619A1

    公开(公告)日：2013-01-24

    申请号：US13547830

    申请日：2012-07-12

    申请人： Martin Weber ,  Marko Blinzler ,  Norbert Güntherberg

    发明人： Martin Weber ,  Marko Blinzler ,  Norbert Güntherberg

    IPC分类号： C08L77/00 ,  C08L21/00 ,  C08L33/20

    CPC分类号： C08L77/00 ,  C08K5/1539 ,  C08K7/00 ,  C08L25/12 ,  C08L33/20 ,  C08L51/04

    摘要： Processes for producing thermoplastic molding compositions, which comprise a) from 3 to 79% by weight of one or more (methyl)styrene-acrylonitrile copolymers, which have no maleic-anhydride-derived units, b) from 15 to 91% by weight of one or more polyamides, c) from 5 to 50% by weight of one or more rubbers, d) from 1 to 25% by weight of one or more compatibilizers, e) from 0 to 2% by weight of one or more low-molecular-weight compounds which comprise a dicarboxylic anhydride group, f) from 0 to 50% by weight of one or more fibrous or particulate fillers, and g) from 0 to 40% by weight of further additives, by producing a melt comprising components A, B, and C in a first step and subsequently incorporating D, Also, thermoplastic molding compositions obtainable by these processes, the use of these thermoplastic molding compositions, and moldings, fibers, and foils comprising these thermoplastic molding compositions.

    摘要翻译： 制备热塑性模塑组合物的方法，其包含a）3至79重量％的一种或多种（甲基）苯乙烯 - 丙烯腈共聚物，其不具有马来酸酐衍生的单元，b）15至91重量％ 一种或多种聚酰胺，c）5至50重量％的一种或多种橡胶，d）1至25重量％的一种或多种相容剂，e）0至2重量％的一种或多种低聚物， 包含二羧酸酐基团的分子量化合物，f）0至50重量％的一种或多种纤维或颗粒填料，和g）0至40重量％的其它添加剂，通过制备包含组分A ，B和C，并且随后掺入D。此外，可通过这些方法获得的热塑性模塑组合物，这些热塑性模塑组合物的使用以及包含这些热塑性模塑组合物的模制品，纤维和箔。

    THERMALLY CONDUCTIVE POLYESTER MOLDING MATERIALS
    97.
    发明申请
    THERMALLY CONDUCTIVE POLYESTER MOLDING MATERIALS 审中-公开
    导热聚酯模塑材料

    公开(公告)号：US20120145948A1

    公开(公告)日：2012-06-14

    申请号：US13363839

    申请日：2012-02-01

    申请人： Hiroki Fukuhara ,  Andreas Eipper ,  Carsten Weiß ,  Mark Völkel ,  Reinhard Stransky ,  Jens Aßmann ,  Martin Weber

    发明人： Hiroki Fukuhara ,  Andreas Eipper ,  Carsten Weiß ,  Mark Völkel ,  Reinhard Stransky ,  Jens Aßmann ,  Martin Weber

    IPC分类号： C09K5/14

    CPC分类号： C09K5/14 ,  C08K3/22 ,  C08K5/09 ,  C08L67/00 ,  C08L67/02 ,  C08L69/00 ,  C08L2666/18

    摘要： Thermoplastic molding compositions comprising A) from 10 to 69% by weight of a thermoplastic polyester B) from 30 to 79% by weight of an aluminum oxide C) from 0.01 to 10% by weight of an organic or inorganic acid or mixture of these D) from 0 to 10% by weight of D1) at least one highly branched or hyperbranched polycarbonate with an OH number of from 1 to 600 mg KOH/g of polycarbonate (to DIN 53240, part 2), or D2) at least one highly branched or hyperbranched polyester of AxBy type, where x is at least 1.1 and y is at least 2.1, or a mixture of these E) from 0 to 50% by weight of other additives, where the entirety of the percentages by weight of components A) to E) gives 100%.

    摘要翻译： 热塑性成型组合物，其包含A）10至69重量％的热塑性聚酯B）30至79重量％的氧化铝C）0.01至10重量％的有机或无机酸或这些D的混合物 ）0至10重量％的D1）至少一种高度支化或超支化的聚碳酸酯，其OH数为1至600mg KOH / g聚碳酸酯（根据DIN 53240，第2部分）或D2）至少一种高度 支链或超支化的AxBy型聚酯，其中x为至少1.1，y为至少2.1，或这些E）的混合物为0至50重量％的其它添加剂，其中组分A的重量百分比 ）到E）给出100％。

    Thermoplastic moulding compositions having improved ductility
    98.
    发明授权
    Thermoplastic moulding compositions having improved ductility 有权
    热塑性成型组合物具有改善的延展性

    公开(公告)号：US08197715B2

    公开(公告)日：2012-06-12

    申请号：US12519674

    申请日：2007-12-11

    申请人： Martin Weber ,  Xaver Hopfenspirger ,  Steffen Funkhauser ,  Walter Heckmann ,  Jörg Schnorr ,  Raquel Fernandez Rodiles ,  Rainer Klenz ,  Hagen Stawitzki ,  Bernd Bruchmann

    发明人： Martin Weber ,  Xaver Hopfenspirger ,  Steffen Funkhauser ,  Walter Heckmann ,  Jörg Schnorr ,  Raquel Fernandez Rodiles ,  Rainer Klenz ,  Hagen Stawitzki ,  Bernd Bruchmann

    IPC分类号： H01B1/06 ,  A61K9/16 ,  C08L31/00 ,  C08L27/00

    CPC分类号： C08L77/06 ,  C08L51/06 ,  C08L67/00 ,  C08L69/00 ,  C08L77/00 ,  C08L2205/03 ,  C08L2666/18 ,  C08L2666/02 ,  C08L2666/24

    摘要： Thermoplastic molding compositions comprising A) from 40 to 96% by weight of a semiaromatic polyamide, B) from 2 to 30% by weight of a copolymer composed of B1) from 35 to 89.9% by weight of ethylene, B2) from 10 to 60% by weight of 1-octene or 1-butene or propylene or a mixture of these, and B3) from 0.05 to 5% by weight of functional monomers, where the functional monomers have been selected from the group of the carboxylic acid groups, carboxylic anhydride groups, carboxylic ester groups, carboxamide groups, carboximide groups, amino groups, hydroxy groups, epoxy groups, urethane groups, or oxazoline groups, or a mixture of these, C) from 1 to 50% by weight of fibrous or particulate fillers, or a mixture of these, D) from 0.1 to 10% by weight of D1) at least one highly branched or hyperbranched polycarbonate with an OH number of from 1 to 600 mg KOH/g of polycarbonate (to DIN 53240, part 2), or D2) at least one highly branched or hyperbranched polyester of AxBy type, where x is at least 1.1 and y is at least 2.1, or a mixture of these, E) from 0 to 15% by weight of an electrically conductive additive, F) from 0 to 30% by weight of further additives, where the total of the percentages by weight of components A) to F) is 100%.

    摘要翻译： 热塑性成型组合物，其包含A）40至96重量％的半芳族聚酰胺，B）2至30重量％的共聚物，由B1组成，35至89.9重量％的乙烯，B2）10至60 重量％的1-辛烯或1-丁烯或丙烯或它们的混合物和B3）0.05至5重量％的官能单体，其中官能单体选自羧酸基团，羧酸基团 酸酐基，羧酸酯基，羧酰胺基，酰亚胺基，氨基，羟基，环氧基，氨基甲酸酯基或恶唑啉基，或它们的混合物，C）1至50重量％的纤维或颗粒填料， 或这些的混合物，D）0.1至10重量％的D1）至少一种高度支化或超支化的聚碳酸酯，其OH数为1至600mg KOH / g聚碳酸酯（根据DIN 53240，第2部分）， 或D2）至少一种高度支化或超支化的AxBy型聚酯，其中x为l 东部1.1，y为至少2.1，或这些的混合物，E）0至15重量％的导电添加剂，F）0至30重量％的其它添加剂，其中通过 组分A）至F）的重量为100％。

    Method and device for producing semiconductor wafers of silicon
    99.
    发明授权
    Method and device for producing semiconductor wafers of silicon 失效
    用于制造硅半导体晶片的方法和装置

    公开(公告)号：US08172941B2

    公开(公告)日：2012-05-08

    申请号：US12002881

    申请日：2007-12-19

    申请人： Martin Weber ,  Herbert Schmidt ,  Wilfried von Ammon

    发明人： Martin Weber ,  Herbert Schmidt ,  Wilfried von Ammon

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/30 ,  C30B30/04 ,  Y10T117/1016 ,  Y10T117/1032

    摘要： Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.

    摘要翻译： 硅的半导体晶片通过从包含在坩埚中的熔体中拉出单晶并从拉出的单晶切片半导体晶片来产生，在拉伸单晶期间，热量被传送到与熔体边界处的生长单晶的中心 单晶，施加CUSP磁场，使得CUSP磁场的中性表面与熔体表面至少50mm的距离与单晶的牵引轴相交。 因此，合适的装置包含CUSP场，其定位成使得中性场与坩埚中的晶体的轴线相距熔融表面50mm以上。