EMBEDDING A NANOTUBE INSIDE A NANOPORE FOR DNA TRANSLOCATION
    91.
    发明申请
    EMBEDDING A NANOTUBE INSIDE A NANOPORE FOR DNA TRANSLOCATION 有权
    嵌入一​​个NANOTUBE内部的NANOPORE进行DNA转录

    公开(公告)号:US20130062206A1

    公开(公告)日:2013-03-14

    申请号:US13611701

    申请日:2012-09-12

    IPC分类号: C25D15/00 B82Y40/00

    摘要: A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

    摘要翻译: 提供了一种在纳米孔中嵌入纳米管的技术。 膜将储存器分离成第一储存部分和第二储存部分,并且纳米孔通过膜形成,用于连接第一和第二储存部分。 离子流体填充纳米孔,第一储存部分和第二储存部分。 将第一电极浸入第一储存部分中,将第二电极浸入第二储存部分。 将纳米管驱动到纳米孔中导致纳米孔的内表面通过有机涂层与纳米管的外表面形成共价键,使得纳米管的内表面将成为具有超光滑表面的新纳米孔,用于研究生物 分子,同时它们转移通过纳米管。

    Patterned doping of semiconductor substrates using photosensitive monolayers

    公开(公告)号:US08354333B2

    公开(公告)日:2013-01-15

    申请号:US12699552

    申请日:2010-02-03

    IPC分类号: H01L21/22 H01L21/38

    摘要: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

    PATTERNED DOPING OF SEMICONDUCTOR SUBSTRATES USING PHOTOSENSITIVE MONOLAYERS
    94.
    发明申请
    PATTERNED DOPING OF SEMICONDUCTOR SUBSTRATES USING PHOTOSENSITIVE MONOLAYERS 失效
    使用光敏单体的半导体基板的图案化

    公开(公告)号:US20120273925A1

    公开(公告)日:2012-11-01

    申请号:US13541857

    申请日:2012-07-05

    IPC分类号: H01L29/06

    摘要: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

    摘要翻译: 公开了半导体器件和制造半导体器件的方法。 本发明的实施方案使用光敏自组装单层将基材的表面图案化成亲水和疏水区域,并且掺杂剂化合物的水溶液(或醇)沉积在基材表面上。 掺杂剂仅粘附在亲水区上。 在沉积之后,用非常薄的氧化层涂覆衬底以封盖化合物,并且衬底在高温下退火以将掺杂剂原子扩散到硅中并激活掺杂剂。 在一个实施例中,该方法包括提供包括氧化物表面的半导体衬底,将所述表面图案化成疏水和亲水区域,在衬底上沉积包括掺杂剂的化合物,其中掺杂剂粘附到亲水区域,并将掺杂剂扩散到 氧化物表面。

    SPIN-ON FORMULATION AND METHOD FOR STRIPPING AN ION IMPLANTED PHOTORESIST
    96.
    发明申请
    SPIN-ON FORMULATION AND METHOD FOR STRIPPING AN ION IMPLANTED PHOTORESIST 有权
    用于剥离离子印刷光栅的旋转配方和方法

    公开(公告)号:US20120270763A1

    公开(公告)日:2012-10-25

    申请号:US13535466

    申请日:2012-06-28

    IPC分类号: G03F7/42

    CPC分类号: H01L21/311 G03F7/40 G03F7/423

    摘要: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

    摘要翻译: 提供了一种可用于汽提离子注入光刻胶的旋涂配方,其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水,酸或有机溶剂。 因此,上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

    Radiation sensitive self-assembled monolayers and uses thereof
    97.
    发明授权
    Radiation sensitive self-assembled monolayers and uses thereof 有权
    辐射敏感的自组装单层及其用途

    公开(公告)号:US08273886B2

    公开(公告)日:2012-09-25

    申请号:US12199607

    申请日:2008-08-27

    摘要: The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

    摘要翻译: 本发明涉及一种辐射敏感化合物,其包含接近化合物一端的表面结合基团,用于连接至底物,以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属,金属氧化物或半导体材料的基板。