公开(公告)号：US20220093390A1

公开(公告)日：2022-03-24

申请号：US17025009

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/324 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56 ,  C23C16/50 ,  C23C16/30

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

公开(公告)号：US11244824B2

公开(公告)日：2022-02-08

申请号：US16754619

申请日：2018-10-09

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yihong Chen ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

公开(公告)号：US20210351035A1

公开(公告)日：2021-11-11

申请号：US17379508

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US20210130960A1

公开(公告)日：2021-05-06

申请号：US17085255

申请日：2020-10-30

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Rui Cheng ,  Jian Li

IPC: C23C16/46 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

Abstract: Exemplary temperature modulation methods may include delivering a gas through a purge line extending within a substrate support. The gas may be directed to a backside surface of the substrate support opposite a substrate support surface. The purge line may extend along a central axis of a shaft, the shaft being hermetically sealed with the substrate support. The substrate support may be characterized by a center and a circumferential edge. A first end of the purge line may be fixed at a first distance from the backside surface of the substrate support. The methods may include flowing the gas at a first flow rate via a flow pathway to remove heat from the substrate support to achieve a desired substrate support temperature profile.

公开(公告)号：US10886140B2

公开(公告)日：2021-01-05

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US20200035505A1

公开(公告)日：2020-01-30

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US10529568B2

公开(公告)日：2020-01-07

申请号：US15406116

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

公开(公告)号：US20190385851A1

公开(公告)日：2019-12-19

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： SRINIVAS GANDIKOTA ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US10510589B2

公开(公告)日：2019-12-17

申请号：US15991376

申请日：2018-05-29

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3215 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/324

Abstract: Methods for seam and void-free gapfilling, such as gapfilling high aspect ratio trenches with amorphous silicon, are provided. A method generally includes depositing amorphous silicon over a semiconductor device having one or more features thereon, annealing the deposited amorphous silicon to heal one or more seams in the deposited amorphous silicon between the one or more features, and etching the annealed amorphous silicon to remove one or more voids in the annealed amorphous silicon between the one or more features. The deposition, anneal, and etch processes are generally repeated any suitable number of times to achieve amorphous silicon gapfill without any seam or void between the one or more features.

公开(公告)号：US20190228982A1

公开(公告)日：2019-07-25

申请号：US16246711

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Abhijit Basu Mallick ,  Shishi Jiang ,  Yong Wu ,  Kurtis Leschkies ,  Srinivas Gandikota

IPC: H01L21/3105 ,  C23C16/56 ,  H01L21/02

Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.