Technique for ion beam angle spread control
    91.
    发明授权
    Technique for ion beam angle spread control 有权
    离子束角扩散控制技术

    公开(公告)号:US07868305B2

    公开(公告)日:2011-01-11

    申请号:US11145949

    申请日:2005-06-07

    IPC分类号: H01J37/302

    摘要: A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.

    摘要翻译: 公开了一种用于离子束角度扩展控制的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于离子束角度扩展控制的方法。 该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束,从而将衬底表面暴露于受控的离子束入射角扩散。

    Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
    92.
    发明授权
    Techniques for improving the performance and extending the lifetime of an ion source with gas mixing 有权
    用气体混合改善离子源的性能和延长使用寿命的技术

    公开(公告)号:US07655931B2

    公开(公告)日:2010-02-02

    申请号:US11693308

    申请日:2007-03-29

    申请人: Atul Gupta

    发明人: Atul Gupta

    摘要: Techniques improving the performance and extending the lifetime of an ion source with gas mixing are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter. The method may comprise introducing a predetermined amount of dopant gas into an ion source chamber. The dopant gas may comprise a dopant species. The method may also comprise introducing a predetermined amount of diluent gas into the ion source chamber. The diluent gas may dilute the dopant gas to improve the performance and extend the lifetime of the ion source. The diluent gas may further comprise a co-species that is the same as the dopant species.

    摘要翻译: 公开了通过气体混合改善离子源的性能和延长寿命的技术。 在一个特定的示例性实施例中,可以将技术实现为用于改进离子注入机中的离子源的性能和延长寿命的方法。 该方法可以包括将预定量的掺杂剂气体引入到离子源室中。 掺杂剂气体可以包括掺杂剂物质。 该方法还可以包括将预定量的稀释气体引入离子源室。 稀释气体可以稀释掺杂气体以改善性能并延长离子源的寿命。 稀释气体还可以包含与掺杂剂物质相同的共同物质。

    Method of determining angle misalignment in beam line ion implanters
    93.
    发明授权
    Method of determining angle misalignment in beam line ion implanters 有权
    确定梁线离子注入机中角度偏差的方法

    公开(公告)号:US07642529B2

    公开(公告)日:2010-01-05

    申请号:US11541373

    申请日:2006-09-29

    IPC分类号: H01J37/317

    摘要: A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. A method of determining a substrate miscut is also provided.

    摘要翻译: 一种方法包括将离子束相对于衬底的目标表面以多个不同的入射角引导,以将离子注入到衬底的多个部分中,其中多个不同入射角中的每一个与不同的入射角相关联 多个部分中的一个,测量来自基板的多个部分中的每个部分的角度敏感数据,以及从角度敏感数据确定入射到目标表面上的目标表面和离子束之间的角度偏移。 还提供了确定衬底杂交的方法。

    System, method and apparatus for loading text data in a database
    94.
    发明授权
    System, method and apparatus for loading text data in a database 有权
    用于在数据库中加载文本数据的系统,方法和装置

    公开(公告)号:US07542979B2

    公开(公告)日:2009-06-02

    申请号:US10956665

    申请日:2004-10-01

    申请人: Atul Gupta Amar Singh

    发明人: Atul Gupta Amar Singh

    IPC分类号: G06F17/00

    摘要: The present invention includes an apparatus, method and system for loading data into a database. The invention includes a spreadsheet dataset, having data in the form of one or more records, a control file containing a set of rules, each rule having a condition and a spreadsheet loader. The spreadsheet dataset and the control file are inputs to the spreadsheet loader. Each rule in the control file is evaluated for each record to determine if the condition is true for the record, and the records are parsed if the condition is true. The spreadsheet loader sends the parsed data to the database. The invention includes a user interface to facilitate creation of the control file.

    摘要翻译: 本发明包括用于将数据加载到数据库中的装置,方法和系统。 本发明包括具有一个或多个记录形式的数据的电子数据表数据集,包含一组规则的控制文件,每个规则具有条件和电子表格加载器。 电子数据表数据集和控制文件是电子表格加载程序的输入。 为每个记录评估控制文件中的每个规则,以确定该条件是否为该记录,如果条件为真,记录将被解析。 电子表格加载器将解析的数据发送到数据库。 本发明包括用于简化控制文件的创建的用户界面。

    Plasma Doping System with In-Situ Chamber Condition Monitoring
    95.
    发明申请
    Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
    等离子体掺杂系统与原位室状态监测

    公开(公告)号:US20090104719A1

    公开(公告)日:2009-04-23

    申请号:US11877312

    申请日:2007-10-23

    IPC分类号: H01L21/66

    CPC分类号: H01L22/20 H01L22/12

    摘要: A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

    摘要翻译: 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置,其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外,至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

    TUNING AN ION IMPLANTER FOR OPTIMAL PERFORMANCE
    96.
    发明申请
    TUNING AN ION IMPLANTER FOR OPTIMAL PERFORMANCE 审中-公开
    调整离子植入物的最佳性能

    公开(公告)号:US20080245957A1

    公开(公告)日:2008-10-09

    申请号:US11695747

    申请日:2007-04-03

    IPC分类号: G21K5/00 G01D18/00

    摘要: An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.

    摘要翻译: 描述了调整离子注入机以获得最佳性能的方法。 在一个实施例中,存在用于调整具有多个束线元件的离子注入机的系统,以产生具有所需波束特性的离子束。 在该实施例中,系统包括被配置为提供用于产生所需光束特性的波束线元件设置的波束线元件设置控制器。 调谐模型将光束元素设置与光束属性相关联。 校准组件被配置为响应于从使用调谐的波束线元件设置测量的波束特性与所确定的调谐波束线元件设置不同的确定校准调谐模型。

    Technique for ion beam angle spread control for advanced applications
    97.
    发明授权
    Technique for ion beam angle spread control for advanced applications 有权
    用于先进应用的离子束角度扩展控制技术

    公开(公告)号:US07394078B2

    公开(公告)日:2008-07-01

    申请号:US11146072

    申请日:2005-06-07

    IPC分类号: G21K5/10

    摘要: A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

    摘要翻译: 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中,该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量,从而将基底表面暴露于受控的离子束角度 - 剂量分布。

    Technique for ion beam angle spread control for advanced applications
    98.
    发明申请
    Technique for ion beam angle spread control for advanced applications 有权
    用于先进应用的离子束角度扩展控制技术

    公开(公告)号:US20060208204A1

    公开(公告)日:2006-09-21

    申请号:US11146072

    申请日:2005-06-07

    IPC分类号: H01J37/302 H01J37/317

    摘要: A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

    摘要翻译: 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中,该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量,从而将基底表面暴露于受控的离子束角度 - 剂量分布。

    Etch and deposition control for plasma implantation
    99.
    发明申请
    Etch and deposition control for plasma implantation 审中-公开
    用于等离子体植入的蚀刻和沉积控制

    公开(公告)号:US20050287307A1

    公开(公告)日:2005-12-29

    申请号:US10874944

    申请日:2004-06-23

    CPC分类号: H01L21/2236 H01J37/32412

    摘要: A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

    摘要翻译: 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体,所述至少一种植入材料包括至少一种植入物种,将所述至少一种植入物种植入所述基质的表面,以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。