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91.发明授权Moving target identifying system in a base station radar unit for specifying information about moving targets carrying a mobile station radar unit 失效基站雷达单元中的移动目标识别系统，用于指定携带移动台雷达单元的移动目标的信息
公开(公告)号：US5594447A
公开(公告)日：1997-01-14
申请号：US457614
申请日：1995-06-01
IPC分类号： G01S7/288 , G01S7/41 , G01S13/42 , G01S13/48 , G01S13/76 , G01S13/78 , G01S13/86 , G01S13/91 , G01S13/92 , G01S13/93 , G07B15/06
CPC分类号： G07B15/063 , G01S13/765 , G01S13/91 , G01S13/92 , G01S13/42 , G01S13/48 , G01S13/78 , G01S13/867 , G01S13/931 , G01S2007/2883 , G01S2013/9353 , G01S2013/936 , G01S7/412
摘要： A vehicle ID radar system has a simple construction and obtains high identifying performance by making a general identification based on a plurality of responses. There are provided an antenna for obtaining a plurality of question signals from a base station radar unit, a receiver for processing the signals received from the antenna, a question code demodulator for demodulating question codes from the received signals, a question code decoder for decoding the question codes and reading responses respectively corresponding to the plurality of questions from a plurality of data bases, a response code generator for generating response signals, and a transmitter for modulating the response signals and supplying them to the antenna.
摘要翻译： 车辆ID雷达系统具有简单的结构，并且通过基于多个响应进行通用识别来获得高识别性能。 提供了一种用于从基站雷达单元获得多个问题信号的天线，用于处理从天线接收的信号的接收机，用于从接收到的信号中解调问题码的问题码解调器，用于解码 分别对应于来自多个数据库的多个问题的问题代码和读取响应，用于产生响应信号的响应代码发生器和用于调制响应信号并将其提供给天线的发送器。
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公开(公告)号：US5470404A
公开(公告)日：1995-11-28
申请号：US63895
申请日：1993-05-17
CPC分类号： C01B3/0057 , H01M4/383 , Y02E60/327 , Y10S420/90
摘要： A rare earth metal-nickel hydrogen occlusive alloy ingot contains 90 vol % or more of crystals having a crystal grain size of 1 to 50 .mu.m as measured along a short axis of the crystal and 1 to 100 .mu.m as measured along a long axis of the crystal. A method for producing the rare earth metal-nickel hydrogen occlusive alloy ingot involves melting a rare earth metal-nickel alloy and uniformly solidifying the alloy melt to have a thickness of 0.1 to 20 mm under cooling conditions of a cooling rate of 10.degree. to 1000.degree. C./sec and a sub-cooling degree of 10.degree. to 500.degree. C.
摘要翻译： 稀土金属 - 镍氢合金合金锭包含90体积％以上的晶体尺寸为1〜50μm的结晶，沿着长轴测定为1〜100μm 的水晶。 制备稀土金属 - 镍氢合金合金锭的方法包括在10至1000的冷却速率的冷却条件下熔化稀土金属 - 镍合金并均匀地固化合金熔体，使其厚度为0.1-20mm ℃/秒，次冷度为10〜500℃。
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公开(公告)号：US5373059A
公开(公告)日：1994-12-13
申请号：US177339
申请日：1994-01-04
申请人： Tadashi Asanuma , Kazuhiko Yamamoto
发明人： Tadashi Asanuma , Kazuhiko Yamamoto
IPC分类号： C08F255/02
CPC分类号： C08F255/02 , Y10S526/943
摘要： A syndiotactic graft copolymer is here disclosed in which a radical polymerizable unsaturated compound is grafted on a propylene homopolymer or copolymer, and this graft copolymer is obtained by heating a homopolymer having a substantially syndiotactic structure of propylene or a copolymer having a substantially syndiotactic structure of propylene and another .alpha.-olefin and a radical polymerizable unsaturated compound such as an unsaturated carboxylic acid or an unsaturated silane in the presence of a radical initiator up to the decomposition temperature or more of the radical initiator. This kind of graft copolymer can be used as a composition for adhesion. The graft copolymer in which the radical polymerizable unsaturated compound is a hydrolyzable unsaturated silane can be converted into a crosslinked polymer by heating in the presence of water, and it can also be converted into a water-crosslinkable resin composition by adding various additive thereto.
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公开(公告)号：US5314957A
公开(公告)日：1994-05-24
申请号：US992101
申请日：1992-12-17
申请人： Tadashi Asanuma , Kazuhiko Yamamoto
发明人： Tadashi Asanuma , Kazuhiko Yamamoto
IPC分类号： C08F255/02 , C08F8/00 , C08F255/00 , C08J3/24 , C08J5/00 , C08L23/00 , C08L23/02 , C08L23/08
CPC分类号： C08F255/00 , C08F8/00 , Y10S526/943
摘要： A method for preparing a molded article of a crosslinked polyolefin which comprises the steps of bringing a composition comprising a copolymer of an alkenylsilane and an olefin and a compound having at least two unsaturated bonds into contact with a catalyst selected from the group consisting of salts of rhodium, alkoxy compounds and metallocene compounds of metals in the group IVa of the periodic table, combinations of the metallocene compounds and organic metal compounds, and then molding the composition, or carrying out the contact simultaneously with the molding, or molding the composition, and then bringing the molded article into contact with the catalyst, and if necessary, further heating the molded article to accelerate a crosslinking reaction.The molded article of the crosslinked polyolefin obtained by the method of the present invention has a high crosslinking density and is excellent in mechanical properties, solvent resistance and heat resistance.
摘要翻译： 一种制备交联聚烯烃的模制品的方法，包括以下步骤：将包含烯基硅烷和烯烃的共聚物的组合物和具有至少两个不饱和键的化合物与选自以下的催化剂接触： 铑，烷氧基化合物和周期表IVa族金属茂金属化合物，茂金属化合物和有机金属化合物的组合，然后模塑组合物，或与模塑同时进行接触或模塑组合物，以及 然后使模制品与催化剂接触，并且如果需要，进一步加热模制品以加速交联反应。 通过本发明的方法获得的交联聚烯烃的成型品具有高交联密度，机械性能，耐溶剂性和耐热性优异。
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公开(公告)号：US5132157A
公开(公告)日：1992-07-21
申请号：US525726
申请日：1990-05-21
CPC分类号： C08J5/18 , B29C55/005 , B29C59/022 , B29K2023/12 , B29K2995/0026 , B29K2995/0072 , C08J2323/10 , Y10S428/91 , Y10T156/1002 , Y10T156/1023 , Y10T428/24355 , Y10T428/24479 , Y10T428/26 , Y10T428/269 , Y10T428/31 , Y10T428/31938
摘要： A stretched film of polypropylene which is excellent in transparency, substantially free of an antiblocking agent and at least uniaxially stretched and which is characterized in that it has uniformly distributed projections having a height ranging from 0.05 to 0.50 .mu. and a width ranging from 10 to 100 .mu. at least on the surface thereof as well as a method for preparing the foregoing stretched film of polypropylene which comprises the steps of forming, into a sheet, polypropylene which comprises a nucleating agent in an amount selected so that the crystallization temperature of polypropylene is increased by 1.degree.to 10.degree. C. by the addition thereof and then stretching the sheet at a temperature ranging from 140.degree. to 165.degree. C. are herein disclosed.
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96.发明授权公开(公告)号：US08860000B2
公开(公告)日：2014-10-14
申请号：US13019630
申请日：2011-02-02
申请人： Kazuhiko Yamamoto , Takuya Konno
发明人： Kazuhiko Yamamoto , Takuya Konno
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2463 , H01L45/149 , H01L45/1658
摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.
摘要翻译： 根据实施例的非易失性半导体存储器件包括下电极层，可变电阻层和上电极层。 下电极层设置在基板上。 可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。 上电极层设置在可变电阻层上。 可变电阻层包括碳纳米结构和金属原子。 碳纳米结构被堆叠以具有多个间隙。 金属原子扩散到间隙中。
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公开(公告)号：US08686384B2
公开(公告)日：2014-04-01
申请号：US13052426
申请日：2011-03-21
IPC分类号： H01L21/00
CPC分类号： H01L45/1675 , B82Y10/00 , B82Y40/00 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/149
摘要： According to one embodiment, a memory device includes a nanomaterial assembly layer, a first electrode layer and a second electrode layer. The nanomaterial assembly layer is formed of an assembly of a plurality of micro conductors via gaps between the micro conductors. The first electrode layer is provided on the nanomaterial assembly layer. The second electrode layer is provided on the first electrode layer.
摘要翻译： 根据一个实施例，存储器件包括纳米材料组装层，第一电极层和第二电极层。 纳米材料组装层通过微导体之间的间隙由多个微导体的组件形成。 第一电极层设置在纳米材料组装层上。 第二电极层设置在第一电极层上。
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公开(公告)号：US08507888B2
公开(公告)日：2013-08-13
申请号：US13018765
申请日：2011-02-01
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , B82Y10/00 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/149 , H01L45/1608 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
摘要翻译： 根据一个实施例，非易失性存储器件包括选择元件层和纳米材料聚集层。 选择元件层包括硅。 纳米材料聚集层层叠在选择元件层上。 纳米材料聚集体层包括分散在微导电体之间的多个间隙中的多个微导电体和微粒。 至少微细颗粒的表面由氧化硅以外的绝缘材料制成。
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公开(公告)号：US08455346B2
公开(公告)日：2013-06-04
申请号：US13075658
申请日：2011-03-30
申请人： Yasuhiro Nojiri , Hiroyuki Fukumizu , Shinichi Nakao , Kei Watanabe , Kazuhiko Yamamoto , Ichiro Mizushima , Yoshio Ozawa
发明人： Yasuhiro Nojiri , Hiroyuki Fukumizu , Shinichi Nakao , Kei Watanabe , Kazuhiko Yamamoto , Ichiro Mizushima , Yoshio Ozawa
IPC分类号： H01L21/4763 , G11C11/00
CPC分类号： H01L51/0591 , B82Y10/00 , B82Y40/00 , G11C13/0002 , G11C13/025 , G11C2213/71 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.
摘要翻译： 根据一个实施例，公开了一种用于制造非易失性存储器件的方法。 非易失性存储器件包括连接到第一互连和第二互连的存储单元。 该方法可以包括在第一互连上形成第一电极膜。 该方法可以包括在第一电极膜上形成分散在绝缘体内的多个碳纳米管的层。 多个碳纳米管中的至少一个碳纳米管从绝缘体的表面露出。 该方法可以包括在该层上形成第二电极膜。 此外，该方法可以包括在第二电极膜上形成第二互连。
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公开(公告)号：US20120104352A1
公开(公告)日：2012-05-03
申请号：US13052426
申请日：2011-03-21
CPC分类号： H01L45/1675 , B82Y10/00 , B82Y40/00 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/149
摘要： According to one embodiment, a memory device includes a nanomaterial assembly layer, a first electrode layer and a second electrode layer. The nanomaterial assembly layer is formed of an assembly of a plurality of micro conductors via gaps between the micro conductors. The first electrode layer is provided on the nanomaterial assembly layer. The second electrode layer is provided on the first electrode layer.
摘要翻译： 根据一个实施例，存储器件包括纳米材料组装层，第一电极层和第二电极层。 纳米材料组装层通过微导体之间的间隙由多个微导体的组件形成。 第一电极层设置在纳米材料组装层上。 第二电极层设置在第一电极层上。
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