公开(公告)号：US20050045959A1

公开(公告)日：2005-03-03

申请号：US10496825

申请日：2001-11-30

申请人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

发明人： Satoshi Sakai ,  Atsushi Hiraiwa ,  Satoshi Yamamoto

IPC分类号： H01L21/8238 ,  H01L27/088 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878

摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

摘要翻译： 在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9） 在半导体衬底（1）上形成高介电常数绝缘膜（10）。 因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数 在半导体衬底（1）上形成恒定绝缘膜（10）。

公开(公告)号：US06794257B2

公开(公告)日：2004-09-21

申请号：US10465642

申请日：2003-06-20

申请人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

发明人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

IPC分类号： H01L21336

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor integrated circuit device includes steps of forming a silicon oxide film as thin as 5 nm or less on the surfaces of p-type wells and n-type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film to form a silicon oxynitride film, and exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film to form a silcon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

摘要翻译： 一种制造半导体集成电路器件的方法包括以下步骤：通过湿式氧化衬底，在p型阱和n型阱的表面上形成薄至5nm或更小的氧化硅膜，在包含 约5％的NO气体以将氮气引入到氧化硅膜中以形成氧氮化硅膜，并将衬底暴露于氮等离子体气氛中，以进一步将氮气引入到氧氮化硅膜中，以形成硅氧烷氮氧化物栅绝缘膜，其具有 与基板的界面附近的第一峰值浓度和其表面附近的第二峰值浓度。 由此，不会使衬底与栅极绝缘膜的界面附近的氮浓度提高到高于所需的水平，所以栅极绝缘膜的氮浓度增加。

公开(公告)号：US06518202B2

公开(公告)日：2003-02-11

申请号：US09752737

申请日：2001-01-03

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21469

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06239041B1

公开(公告)日：2001-05-29

申请号：US09380646

申请日：1999-09-07

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H07L21316

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

摘要翻译： 制造本发明的半导体集成电路器件的方法包括将由氢和氧产生的低浓度水的氧化物质通过催化作用输送到半导体晶片的主表面或其附近，以及 在半导体晶片的主表面上以氧化膜生长速率形成用作MOS晶体管的栅极绝缘膜的厚度为5nm或更小的薄氧化膜，其足以确保形成氧化膜的保真度， 氧化膜厚度均匀。

公开(公告)号：US06224051B1

公开(公告)日：2001-05-01

申请号：US09549554

申请日：2000-04-14

申请人： Takumi Nakayama ,  Hironaga Hongawa ,  Masashi Matsumoto ,  Hirohito Mukaiyama ,  Hitoshi Asai ,  Mitsuru Shimono ,  Satoshi Sakai ,  Yasuhiro Matsue

发明人： Takumi Nakayama ,  Hironaga Hongawa ,  Masashi Matsumoto ,  Hirohito Mukaiyama ,  Hitoshi Asai ,  Mitsuru Shimono ,  Satoshi Sakai ,  Yasuhiro Matsue

IPC分类号： B65H306

CPC分类号： B41J33/20 ,  B41J3/28 ,  B41J3/283 ,  B41J11/20 ,  B41J11/26 ,  B41J11/30 ,  B41J11/42 ,  B41J11/48 ,  B41J13/02 ,  B41J13/103 ,  B41J25/308 ,  B41J29/38 ,  Y10S271/902

摘要： It is an object of the present invention to prevent a sheet of continuous-form paper from slackening when it is fed back in a printer capable of feeding both sheets of continuous-form paper and cut-form paper. According to the method for feeding back a sheet of continuous-form paper (6) of the present invention, in a paper feed unit including a pin feed device (7) arranged in an upstream of the continuous-form paper feed passage and also including a friction feed device (4, 5) in which both the pin feed device (7) and the friction feed device (4, 5) feed the sheet of continuous-form paper (6) and a circumferential speed of the friction feed device (4, 5) is a little higher than that of the pin feed device (7), a first amount of feed is set by which the sheet of continuous-form paper is not loosened between the friction feed device (4, 5) and the pin feed device (7) and also a second amount of feed is set which is larger than a difference between an amount of feed of the friction feed device (4, 5) and an amount of feed of the pin feed device (7) when the sheet of continuous-form paper is fed back by the first amount of feed, and the sheet of continuous-form paper is fed back by the first amount of feed when both the friction feed device (4, 5) and the pin feed device (7) are simultaneously reversed, and the friction feed device (4, 5) is normally rotated by the second feed amount under the condition that the pin feed device is stopped. The sheet of continuous-form paper (6) is fed back by repeating the above reverse and the normal rotation.

摘要翻译： 本发明的一个目的是在连续形式的纸张被反馈到能够供给两张连续纸和切割纸的打印机中时，防止连续纸张松弛。 根据本发明的连续纸（6）的反馈方法，在包括布置在连续纸供给通道的上游的销钉供给装置（7）的送纸单元中，还包括 一个摩擦进给装置（4,5），其中销进给装置（7）和摩擦供给装置（4,5）都馈送连续纸（6）片和摩擦进给装置的圆周速度 4,5）比销钉装置（7）略高一点，设定第一量的进给量，通过该第一量的进给装置，连续纸张片材在摩擦输送装置（4,5）和 销进给装置（7），并且还设置第二数量的进给量，其大于摩擦进给装置（4,5）的进给量与销进给装置（7）的进给量之间的差异， 连续纸的纸张通过第一量的进料反馈，并且连续纸的纸张由第一个原料 当馈送装置（4,5）和销钉装置（7）同时被反向时，进给装置的输入信号（d），并且摩擦供给装置（4,5）在第二进给量下正常旋转， 送料装置停止。 通过重复上述反向和正常旋转来反馈连续纸（6）的纸张。

公开(公告)号：US06212441B1

公开(公告)日：2001-04-03

申请号：US09007182

申请日：1998-01-14

申请人： Kensuke Hazama ,  Kalev Kask ,  Satoshi Sakai ,  Anand Heriharan Subbaraman

发明人： Kensuke Hazama ,  Kalev Kask ,  Satoshi Sakai ,  Anand Heriharan Subbaraman

IPC分类号： G06F1900

CPC分类号： G06T19/00 ,  G05B19/4097 ,  G05B19/4181 ,  G06Q10/06 ,  G06T7/41 ,  G06T2207/30136 ,  Y02P90/06 ,  Y02P90/265 ,  Y10S707/99944 ,  Y10S715/964

摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.

摘要翻译： 提供了一种用于在整个工厂中管理和分配设计和制造信息的装置和方法，以便于生产诸如弯曲的金属板零件的部件。 根据本发明的一个方面，通过存储和分发与每个作业相关联的设计和制造信息来实现关键设计和制造信息的管理和分配。 通过用工厂中的任何位置即时访问的电子存储工作表来代替传统的纸张作业设置或工作表，本发明提高了工厂的整体效率。 另外，通过本发明的各个方面和特征，改进了部件信息的组织和可访问性以及存储的专家知识。

公开(公告)号：US5886897A

公开(公告)日：1999-03-23

申请号：US690671

申请日：1996-07-31

申请人： Kensuke Hazama ,  Kalev Kask ,  Satoshi Sakai ,  Anand Subbaraman

发明人： Kensuke Hazama ,  Kalev Kask ,  Satoshi Sakai ,  Anand Subbaraman

IPC分类号： G05B19/4097 ,  G05B19/418 ,  G06Q10/06 ,  G06T7/40 ,  G06T17/00 ,  G06T19/00 ,  G06F19/00

CPC分类号： G06T19/00 ,  G05B19/4097 ,  G05B19/4181 ,  G06Q10/06 ,  G06T7/401 ,  G06T2207/30136 ,  Y02P90/06 ,  Y02P90/265 ,  Y10S707/99944 ,  Y10S715/964

摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, for example, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.

公开(公告)号：US5864482A

公开(公告)日：1999-01-26

申请号：US690084

申请日：1996-07-31

申请人： Kensuke Hazama ,  Yearn-Tzuo Hwang ,  Satoshi Sakai

发明人： Kensuke Hazama ,  Yearn-Tzuo Hwang ,  Satoshi Sakai

IPC分类号： G05B19/4097 ,  G05B19/418 ,  G06Q10/06 ,  G06T19/00 ,  G06F15/00

CPC分类号： G06T19/00 ,  G05B19/4097 ,  G05B19/4181 ,  G06F17/30 ,  G06Q10/06 ,  Y02P90/06 ,  Y02P90/265

摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, for example, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.

摘要翻译： 提供了一种用于在整个工厂中管理和分配设计和制造信息的装置和方法，以便于生产诸如弯曲的金属板零件的部件。 根据本发明的一个方面，通过存储和分发与每个作业相关联的设计和制造信息来实现关键设计和制造信息的管理和分配。 通过用例如工厂中的任何位置即时访问的电子存储工作表来代替传统的纸张作业设置或工作表，本发明提高了工厂的整体效率。 另外，通过本发明的各个方面和特征，改进了部件信息的组织和可访问性以及存储的专家知识。

公开(公告)号：US4719692A

公开(公告)日：1988-01-19

申请号：US807369

申请日：1985-12-10

申请人： Satoshi Sakai ,  Yuichi Hishi

发明人： Satoshi Sakai ,  Yuichi Hishi

IPC分类号： G11B5/48 ,  G11B5/56 ,  G11B5/58 ,  G11B17/32 ,  G11B21/20 ,  G11B5/42

CPC分类号： G11B5/56 ,  G11B17/32 ,  G11B5/4826 ,  G11B5/58 ,  Y10T29/4903

摘要： A method of manufacturing a magnetic head assembly including a carriage, a lower magnetic head fixed to the carriage, a spring-loaded arm connected to the carriage, and an upper magnetic head fixed to the arm and facing the lower head, the upper and lower heads defining therebetween a clearance having a width which is equal to the thickness of a magnetic disk, the arm is so supported at its end remote from the upper head that it may be rotatable only in a direction which allows the upper head to face the lower head.

摘要翻译： 一种制造磁头组件的方法，该磁头组件包括滑架，固定到滑架的下磁头，连接到滑架的弹簧加载臂和固定到臂并面向下磁头的上磁头，上和下 在其间限定具有等于磁盘厚度的宽度的间隙的头部，所述臂在其远离上部头部的端部处被支撑，其可以仅在允许上部头部朝向下部的方向旋转的方向上 头。

公开(公告)号：US09490104B2

公开(公告)日：2016-11-08

申请号：US13550638

申请日：2012-07-17

申请人： Ken'etsu Yokogawa ,  Masatoshi Miyake ,  Takashi Uemura ,  Masaru Izawa ,  Satoshi Sakai

发明人： Ken'etsu Yokogawa ,  Masatoshi Miyake ,  Takashi Uemura ,  Masaru Izawa ,  Satoshi Sakai

IPC分类号： B23K9/00 ,  H01J37/32 ,  H01L21/324 ,  H01L21/67

CPC分类号： H01J37/32091 ,  H01J37/32522 ,  H01L21/324 ,  H01L21/67115

摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.

摘要翻译： 加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。