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91.发明申请公开(公告)号：US20130111992A1
公开(公告)日：2013-05-09
申请号：US13673072
申请日：2012-11-09
申请人： Robert Bosch GmbH
发明人： Gary O'Brien
CPC分类号： G01P15/125 , B81B3/0051 , B81B2201/0235 , G01P2015/0871 , G01P2015/0874
摘要： A micro electromechanical system (MEMS) includes a substrate, a first curved surface located at a position above a surface of the substrate, and a second curved surface generally opposite to the first curved surface along a first axis parallel to the surface of the substrate, wherein the first curved surface is movable along the first axis in a direction toward the second curved surface.
摘要翻译： 微机电系统（MEMS）包括基板，位于基板的表面上方的位置的第一弯曲表面和沿着平行于基板的表面的第一轴线大致与第一弯曲表面相对的第二弯曲表面， 其中所述第一弯曲表面可沿着所述第一轴线朝向所述第二弯曲表面的方向移动。
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公开(公告)号：US09236555B2
公开(公告)日：2016-01-12
申请号：US13349009
申请日：2012-01-12
申请人： Po-Jui Chen , Ando Feyh , Gary O'Brien
发明人： Po-Jui Chen , Ando Feyh , Gary O'Brien
IPC分类号： H01L41/083 , H01L41/09 , G01L1/16 , H01L41/047 , H01L41/113
CPC分类号： H01L41/096 , G01L1/16 , H01L41/047 , H01L41/094 , H01L41/1132 , Y10T29/42
摘要： In one embodiment, a method of deforming a MEMS structure includes providing a base layer, providing a first piezoelectric slab operably connected to a surface of the base layer, determining a desired deformation of the base layer, applying a first potential to a first electrode operably connected to the first piezoelectric slab, applying a second potential to a second electrode operably connected to the first piezoelectric slab, and deforming the base layer with the first piezoelectric slab using the applied first potential and the applied second potential based upon the determined desired deformation.
摘要翻译： 在一个实施例中，使MEMS结构变形的方法包括提供基底层，提供可操作地连接到基底层的表面的第一压电片，确定基底层的期望变形，将第一电位可操作地施加到第一电极 连接到所述第一压电板，将第二电位施加到可操作地连接到所述第一压电板的第二电极，以及基于所确定的期望变形，使用所施加的第一电位和所施加的第二电位，使所述基层与所述第一压电板发生变形。
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公开(公告)号：US20120261789A1
公开(公告)日：2012-10-18
申请号：US13232209
申请日：2011-09-14
申请人： Andrew B. Graham , Gary Yama , Gary O'Brien
发明人： Andrew B. Graham , Gary Yama , Gary O'Brien
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/0649 , H01L21/76232 , H01L21/76283 , H01L21/7682 , H01L23/4821 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method of forming an insulating spacer includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion.
摘要翻译： 在一个实施例中，形成绝缘间隔物的方法包括提供基底层，在基底层的上表面上方提供中间层，蚀刻中间层中的第一沟槽，在第一沟槽内沉积第一绝缘材料部分， 在所述中间层的上表面上方沉积第二绝缘材料部分，在所述第二绝缘材料部分的上表面上形成上层，蚀刻所述上层中的第二沟槽，以及在所述第二沟槽内沉积第三绝缘材料部分 并且在第二绝缘材料部分的上表面上。
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94.发明授权公开(公告)号：US07576470B2
公开(公告)日：2009-08-18
申请号：US11799346
申请日：2007-04-30
申请人： Sachin Kumar , James D. Cook , Gary O'Brien , Mohammed A J Qasimi , Richard C. Sorenson , Brian J. Marsh , Viorel V. Avramescu
发明人： Sachin Kumar , James D. Cook , Gary O'Brien , Mohammed A J Qasimi , Richard C. Sorenson , Brian J. Marsh , Viorel V. Avramescu
IPC分类号： H01L41/08
CPC分类号： G01L9/0025 , Y10T29/42
摘要： A method and apparatus, wherein a die is attached to a supporting base structure utilizing a rigid bond adhesive for a SAW (Surface Acoustic Wave) sensor. A rigid bond adhesive with a preferably high glass transition temperature (Tg) can be applied directly between the die and the die supporting structure in a pattern to eliminate time dependent gradual stress effects upon SAW sensor. The rigid bond adhesive can then be cured, which results in a high yield strength and a high young's modulus. The supporting base and the die material comprise a same co-efficient of thermal expansion in order to avoid die displacement over temperature.
摘要翻译： 一种方法和装置，其中使用用于SAW（表面声波）传感器的刚性粘合剂将模具附接到支撑基座结构。 具有优选高玻璃化转变温度（Tg）的刚性粘合剂可以以模式直接施加在模具和模具支撑结构之间，以消除对SAW传感器的时间依赖性渐变应力影响。 然后刚性粘合剂可以固化，这导致高屈服强度和高的杨氏模量。 支撑基底和模具材料包括相同的热膨胀系数，以避免在温度下的模具位移。
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95.发明申请Error compensation for a wireless sensor using a rotating microstrip coupler to stimulate and interrogate a saw device 审中-公开使用旋转微带耦合器刺激和询问锯装置的无线传感器的误差补偿公开(公告)号：US20060284583A1
公开(公告)日：2006-12-21
申请号：US11311417
申请日：2005-12-16
申请人： Richard Andrews , Scott Bunyer , Fred Hintz , James Liu , Steven Magee , Gary O'Brien
发明人： Richard Andrews , Scott Bunyer , Fred Hintz , James Liu , Steven Magee , Gary O'Brien
IPC分类号： H02P7/00
CPC分类号： G01L3/106 , G01L25/003
摘要： Many mechanical systems contain rotating parts used to transfer power from one part of the system to another. The system's efficiency and longevity can be increased by measuring the speed and loading of the rotating parts. Passive wireless sensors are ideal for instrumenting rotating parts because they require no connecting wires and no stored energy. The sensor measurements contain read errors when the stationary interrogation circuit and the rotating sensor are not ideally aligned. The read errors are a function of the angular offset between the stationary interrogation circuit and the passive sensor. As such, the read errors are deterministic. A measurement of the angular offset between the stationary interrogation circuit and the passive sensor is used to determine a correction factor that cancels out the read error to produce a compensated sensor signal.
摘要翻译： 许多机械系统包含用于将电力从系统的一部分传递到另一部分的旋转部件。 通过测量旋转部件的速度和载荷可以提高系统的效率和寿命。 被动无线传感器是仪器旋转部件的理想选择，因为它们不需要连接线，也不需要存储能量。 当固定询问电路和旋转传感器不理想地对准时，传感器测量包含读取错误。 读取错误是静态询问电路和无源传感器之间的角度偏移的函数。 因此，读取错误是确定性的。 使用静态询问电路和无源传感器之间的角度偏移的测量来确定校正因子，其消除读取误差以产生经补偿的传感器信号。
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公开(公告)号：US09161481B2
公开(公告)日：2015-10-13
申请号：US13613282
申请日：2012-09-13
摘要： A shielding arrangement for preventing AM radio interference when a wireless charger is used in a vehicle has a plurality of parallel conductors arranged at a distance from one another responsive to a frequency desired to be attenuated. An interconnection arrangement includes a solid conductive junction and connects the conductors to one another without forming loops, and to ground. The conductors are traces disposed on a PCB. Additional parallel conducts are disposed on the other side of the PCB at an orthogonal orientation with respect to the first conductors. The spacing between the conductors is determined in response to the frequency desired to be attenuated, as well as frequencies thereabove that are desired to be propagated therethrough, such as mobile telephone signals. The solid conductive junction that is disposed on the printed circuit board is electrically and thermally conductive, such as copper.
摘要翻译： 当在车辆中使用无线充电器时，用于防止AM无线电干扰的屏蔽装置具有响应于期望衰减的频率而相互间隔一定距离布置的多个平行导体。 互连布置包括固体导电结，并将导体彼此连接，而不形成环并接地。 导体是布置在PCB上的迹线。 额外的平行导线以相对于第一导体的正交取向设置在PCB的另一侧上。 导体之间的间距是根据期望衰减的频率以及希望通过其传播的频率，例如移动电话信号来确定的。 布置在印刷电路板上的固体导体结电导电，例如铜。
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97.发明授权MEMS package or sensor package with intra-cap electrical via and method thereof 有权MEMS封装或带帽内电通孔的传感器封装及其方法公开(公告)号：US08878314B2
公开(公告)日：2014-11-04
申请号：US13425543
申请日：2012-03-21
申请人： Andrew B. Graham , Gary Yama , Gary O'Brien
发明人： Andrew B. Graham , Gary Yama , Gary O'Brien
CPC分类号： B81B7/007 , B81B2207/092 , B81B2207/095
摘要： A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.
摘要翻译： 包括封装在盖层中的横向电通路的MEMS器件结构及其制造方法。 MEMS器件结构包括位于MEMS器件层上的盖层。 盖层覆盖MEMS器件和MEMS器件层中的一个或多个MEMS器件层电极。 盖层包括可从盖层的表面接近的至少一个盖层电极。 电通孔被封装在覆盖层中，该覆盖层跨越从帽层电极到一个或多个MEMS器件层电极的横向距离延伸。 绝缘层位于电通孔周围，以将电通孔与盖层电隔离。
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公开(公告)号：US08673756B2
公开(公告)日：2014-03-18
申请号：US13232005
申请日：2011-09-14
申请人： Andrew B. Graham , Gary Yama , Gary O'Brien
发明人： Andrew B. Graham , Gary Yama , Gary O'Brien
IPC分类号： H01L21/20
CPC分类号： B81B3/0021 , B81B2207/095 , B81C1/00301
摘要： In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.
摘要翻译： 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上方提供氧化物层，在氧化物层的上表面上方提供第一覆盖层部分，蚀刻第一电极周界， 沟槽延伸穿过第一盖层部分并在氧化物层处停止，在第一电极周界限定沟槽内沉积第一材料部分，在第一材料部分上方沉积第二盖层部分，释放氧化物层的一部分的蒸气，沉积 在所述第二盖层部分上方的第三盖层部分，蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽，以及在所述第二电极周界限定沟槽内沉积第二材料部分， 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。
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公开(公告)号：US08426289B2
公开(公告)日：2013-04-23
申请号：US13232209
申请日：2011-09-14
申请人： Andrew B. Graham , Gary Yama , Gary O'Brien
发明人： Andrew B. Graham , Gary Yama , Gary O'Brien
IPC分类号： H01L21/76
CPC分类号： H01L29/0649 , H01L21/76232 , H01L21/76283 , H01L21/7682 , H01L23/4821 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method of forming an insulating spacer includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion.
摘要翻译： 在一个实施例中，形成绝缘间隔物的方法包括提供基底层，在基底层的上表面上方提供中间层，蚀刻中间层中的第一沟槽，在第一沟槽内沉积第一绝缘材料部分， 在所述中间层的上表面上方沉积第二绝缘材料部分，在所述第二绝缘材料部分的上表面上形成上层，蚀刻所述上层中的第二沟槽，以及在所述第二沟槽内沉积第三绝缘材料部分 并且在第二绝缘材料部分的上表面上。
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公开(公告)号：US20120261822A1
公开(公告)日：2012-10-18
申请号：US13232005
申请日：2011-09-14
申请人： Andrew B. Graham , Gary Yama , Gary O'Brien
发明人： Andrew B. Graham , Gary Yama , Gary O'Brien
CPC分类号： B81B3/0021 , B81B2207/095 , B81C1/00301
摘要： In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.
摘要翻译： 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上方提供氧化物层，在氧化物层的上表面上方提供第一覆盖层部分，蚀刻第一电极周界， 沟槽延伸穿过第一盖层部分并在氧化物层处停止，在第一电极周界限定沟槽内沉积第一材料部分，在第一材料部分上方沉积第二盖层部分，释放氧化物层的一部分的蒸气，沉积 在所述第二盖层部分上方的第三盖层部分，蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽，以及在所述第二电极周界限定沟槽内沉积第二材料部分， 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。
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