公开(公告)号：US20050005846A1

公开(公告)日：2005-01-13

申请号：US10602294

申请日：2003-06-23

申请人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

发明人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

IPC分类号： C23C14/08 ,  C23C14/28 ,  C23C14/56 ,  H01L39/24 ,  C23C16/00

CPC分类号： C23C14/087 ,  C23C14/28 ,  C23C14/562 ,  H01L39/2448

摘要： The present invention relates to an apparatus and method for forming a high-temperature superconducting film on a long tape substrate at speeds suitable for large-scale production. The method includes a spooling system for use in a high-throughput, continuous pulsed laser deposition (PLD) process in which a superconducting layer, such as yttrium-barium-copper-oxide (YBCO), is deposited atop a buffered metal substrate tape that is translated through one or more deposition chambers via the action of a reel-to-reel spooling system and a conductive-radiant multi-zone substrate heater. It also optionally includes a multi-target manipulator apparatus and multiple laser beams in which multiple targets are impinged upon simultaneously.

摘要翻译： 本发明涉及一种适用于大规模生产的速度在长带基板上形成高温超导膜的装置和方法。 该方法包括在高通量连续脉冲激光沉积（PLD）工艺中使用的绕线系统，其中诸如钇 - 氧化钡 - 氧化铜（YBCO）的超导层沉积在缓冲的金属基底带上， 通过卷轴到卷轴绕线系统和导电辐射多区域基板加热器的作用，通过一个或多个沉积室翻转。 它还可选地包括多目标操纵器装置和多个激光束，其中多个目标同时撞击。

公开(公告)号：US06716795B2

公开(公告)日：2004-04-06

申请号：US09406190

申请日：1999-09-27

申请人： David P. Norton ,  Chan Park ,  Amit Goyal

发明人： David P. Norton ,  Chan Park ,  Amit Goyal

IPC分类号： H01B1200

CPC分类号： C23C18/1216 ,  C21D8/12 ,  C21D2201/04 ,  C21D2201/05 ,  C23C14/028 ,  C23C18/14 ,  C30B5/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2454 ,  H01L39/2461 ,  H01L39/248 ,  Y10S428/93

摘要： The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO2 and/or HfO2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO2 and HfO2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10−5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

摘要翻译： 本发明涉及一种具有改进的缓冲层结构的制品，其包括具有金属表面的基底和在基底表面上的外延缓冲层。 外延缓冲层包括由ZrO 2，HfO 2和具有稳定立方相的ZrO 2和/或HfO 2的Ca和稀土元素中的至少一种的化合物中的至少一种。 该物品还可以包括沉积在外延缓冲层上的超导层。 该制品还可以包括在外延缓冲层和超导层之间的外延覆盖层。 一种用于制备外延物品的方法包括：向基底提供金属表面;在所述金属表面上沉积包含至少一种选自ZrO 2，HfO 2和至少一种Ca和 稀土元素稳定ZrO 2和HfO 2中的至少一种的立方相。 外延层沉积步骤在背景压力不超过1×10 -5乇的真空中进行。 该方法还可以包括在外延层上沉积超导层，以及在外延缓冲层和超导层之间沉积外延覆盖层。

公开(公告)号：US20130104233A1

公开(公告)日：2013-04-25

申请号：US13807056

申请日：2010-09-14

申请人： Chan Park ,  Duk gi Jung

发明人： Chan Park ,  Duk gi Jung

IPC分类号： H04L29/06

CPC分类号： H04L63/1441 ,  H04L63/0227 ,  H04L63/1425 ,  H04L63/145 ,  H04W12/1208

摘要： Provided are a device and a method of controlling network data induced by a malicious code of a mobile apparatus. Information input by a user through an input unit of a mobile apparatus is analyzed to determine whether or not the network data generated in the mobile apparatus are network data which are generated in accordance with user's intention, the network data generated in accordance with user's intention are transmitted to an external communication network, the network data which are generated irrespective of user's intention is consider to be network data which causes extrusion of personal information of the user which is induced by the malicious code residing in the mobile apparatus or an external attacker or network data which attack the external communication network, so that transmission of the network data to the external communication network is blocked.

摘要翻译： 提供了一种控制由移动装置的恶意代码引起的网络数据的装置和方法。 分析用户通过移动装置的输入单元输入的信息，以确定在移动装置中生成的网络数据是否是根据用户意图生成的网络数据，根据用户意图产生的网络数据是 被发送到外部通信网络，不管用户意图产生的网络数据被认为是网络数据，其导致用户驻留在移动设备或外部攻击者或网络中的恶意代码引起的用户个人信息的挤出 攻击外部通信网络的数据，使网络数据传输到外部通信网络被阻止。

公开(公告)号：US08353205B2

公开(公告)日：2013-01-15

申请号：US12665870

申请日：2009-05-08

申请人： Dae-Sung Cheon ,  Yong-Bok Jung ,  Eui-Sub Park ,  Chan Park ,  Joong-Ho Synn

发明人： Dae-Sung Cheon ,  Yong-Bok Jung ,  Eui-Sub Park ,  Chan Park ,  Joong-Ho Synn

IPC分类号： E21B49/00 ,  G01V1/40

CPC分类号： G01V1/40 ,  Y10T29/49002

摘要： Provided is a measuring apparatus with AE sensors, which detects the same AE signals with respect to the same events that damage a geotechnical structure, regardless of ground conditions and formations in the geotechnical structure, thereby collecting reliable AE signals. Also, provided is(are) an installing method of the measuring apparatus with the AE sensor, and a set of the measuring apparatus with the AE sensor.

摘要翻译： 本发明提供一种具有AE传感器的测量装置，其与岩土工程结构中的地面条件和结构无关地相同地检测相同的AE信号，从而收集可靠的AE信号。 此外，提供了具有AE传感器的测量装置的安装方法，以及具有AE传感器的一组测量装置。

公开(公告)号：US07955924B2

公开(公告)日：2011-06-07

申请号：US11651542

申请日：2007-01-10

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L21/8238

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

公开(公告)号：US07927902B2

公开(公告)日：2011-04-19

申请号：US11798704

申请日：2007-05-16

申请人： Won-je Park ,  Chan Park ,  Young-hoon Park ,  Jae-ho Song ,  Jong-wook Hong ,  Keo-sung Park

发明人： Won-je Park ,  Chan Park ,  Young-hoon Park ,  Jae-ho Song ,  Jong-wook Hong ,  Keo-sung Park

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14689

摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.

公开(公告)号：US20080211945A1

公开(公告)日：2008-09-04

申请号：US12006763

申请日：2008-01-04

申请人： Jong-Wook Hong ,  Chan Park ,  Sang-Il Jung

发明人： Jong-Wook Hong ,  Chan Park ,  Sang-Il Jung

IPC分类号： H04N3/14

CPC分类号： H04N9/045 ,  H04N5/35563

摘要： An image sensor includes a first sub-pixel, a second sub-pixel, and an image processor. The first sub-pixel generates a first image signal with a first sensitivity, and the second sub-pixel generates a second image signal with a second sensitivity less than the first sensitivity. The image signal processor adds a change in the second image signal from a saturation level to the first image signal to generate a final image signal when the first sub-pixel is saturated.

摘要翻译： 图像传感器包括第一子像素，第二子像素和图像处理器。 第一子像素产生具有第一灵敏度的第一图像信号，并且第二子像素产生具有小于第一灵敏度的第二灵敏度的第二图像信号。 图像信号处理器将第二图像信号从饱和度增加到第一图像信号，以在第一子像素饱和时产生最终图像信号。

公开(公告)号：US20080021121A1

公开(公告)日：2008-01-24

申请号：US11879241

申请日：2007-07-16

申请人： Joseph Norbeck ,  Chan Park ,  Arun Raju

发明人： Joseph Norbeck ,  Chan Park ,  Arun Raju

IPC分类号： C07C27/00

CPC分类号： C01B3/38 ,  C01B2203/0233 ,  C01B2203/04 ,  C01B2203/062 ,  C01B2203/0805 ,  C01B2203/1241 ,  C01B2203/1258 ,  C01B2203/127 ,  C01B2203/148 ,  C01B2203/84 ,  C10G2/30 ,  C10G2300/1003 ,  C10G2300/1011 ,  C10G2300/42 ,  C10G2300/807 ,  C10J3/00 ,  C10J2300/0916 ,  C10J2300/0946 ,  C10J2300/0966 ,  C10J2300/0973 ,  C10J2300/1659 ,  C10J2300/1807 ,  C10K1/024 ,  C10K1/143 ,  C10K1/16 ,  C10K1/165 ,  Y02E20/18 ,  Y02E50/32 ,  Y02P20/145 ,  Y02P30/20

摘要： A method for controlling the synthesis gas composition obtained from a steam methane reformer (SMR) that obtains its feedstock as product gas directly from a steam hydro-gasification reactor SHR). The method allows control of the H2/CO syngas ratio by adjusting the hydrogen feed and the water content of feedstock into a steam hydro-gasification reactor that supplies the SMR. The steam and methane rich product gas of the SHR is generated by means of hydro-gasification of a slurry of carbonaceous material and water. The mass percentages of the product stream at each stage of the process are calculated using a modeling program, such as the ASPEN PLUS™ equilibrium process. By varying the parameters of solid to water ratio and hydrogen to carbon ratio, a sensitivity analysis can be performed that enables one determine the optimum composition of the slurry feedstock to the SHR to obtain a desired syngas ratio output of the SMR. Thus one can adjust the hydrogen feed and the water content of feedstock into the SHR that supplies the SMR to determine the syngas ratio output of the SMR.

摘要翻译： 用于控制从蒸汽甲烷重整器（SMR）获得的合成气组合物的方法，其从蒸汽加氢气化反应器SHR直接获得其原料作为产物气体）。 该方法允许通过将原料的氢气进料和水含量调节到供应SMR的蒸汽加氢 - 气化反应器中来控制H 2 CO 2 / CO合成气比。 SHR的蒸汽和富甲烷产物气体通过碳质材料和水的浆料的加氢气化产生。 使用建模程序（如ASPEN PLUS TM平衡过程）计算过程每个阶段的产物流的质量百分比。 通过改变固 - 水比和氢碳比的参数，可以进行灵敏度分析，使得能够确定SHR的浆料原料的最佳组成以获得SMR的所需合成气比输出。 因此，可以将氢气进料和原料的水含量调节到提供SMR的SHR中，以确定SMR的合成气比输出。

公开(公告)号：US20070267666A1

公开(公告)日：2007-11-22

申请号：US11798704

申请日：2007-05-16

申请人： Won-je Park ,  Chan Park ,  Young-hoon Park ,  Jae-ho Song ,  Jong-wook Hong ,  Keo-sung Park

发明人： Won-je Park ,  Chan Park ,  Young-hoon Park ,  Jae-ho Song ,  Jong-wook Hong ,  Keo-sung Park

IPC分类号： H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14689

摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.

摘要翻译： 制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。 图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。

公开(公告)号：US20070241851A1

公开(公告)日：2007-10-18

申请号：US11818092

申请日：2007-06-12

申请人： Chan Park

发明人： Chan Park

IPC分类号： H01F27/36

CPC分类号： H02M3/28 ,  H01F27/346 ,  H01F27/367 ,  H01F27/38 ,  H01F38/42 ,  H01F2038/026

摘要： An energy transfer element with substantially reduced electrical displacement current flow between an input circuit coupled to the energy transfer element input winding and an output circuit coupled to the energy transfer element output winding. In one aspect, an energy transfer element includes an input winding, an output winding, an electrically conductive shield coupled to the input winding and a first cancellation winding coupled to the input winding. The electrically conductive shield is physically positioned between input and output windings. The output winding is physically positioned between the electrically conductive shield and the first cancellation winding. The first cancellation winding is wound to substantially reduce a capacitive displacement current between the input circuit and the output circuit.

摘要翻译： 具有显着减小的电位移电流的能量传递元件在耦合到能量传递元件输入绕组的输入电路与耦合到能量传递元件输出绕组的输出电路之间流动。 在一个方面，能量传递元件包括输入绕组，输出绕组，耦合到输入绕组的导电屏蔽和耦合到输入绕组的第一消除绕组。 导电屏蔽物理地位于输入和输出绕组之间。 输出绕组物理地位于导电屏蔽和第一消除绕组之间。 卷绕第一消除绕组以显着减小输入电路和输出电路之间的电容性位移电流。