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    Buffer architecture for biaxially textured structures and method of fabricating same
    1.
    发明授权
    Buffer architecture for biaxially textured structures and method of fabricating same 失效
    用于双轴织构结构的缓冲结构及其制造方法

    公开(公告)号：US06716795B2

    公开(公告)日：2004-04-06

    申请号：US09406190

    申请日：1999-09-27

    申请人： David P. Norton ,  Chan Park ,  Amit Goyal

    发明人： David P. Norton ,  Chan Park ,  Amit Goyal

    IPC分类号： H01B1200

    CPC分类号： C23C18/1216 ,  C21D8/12 ,  C21D2201/04 ,  C21D2201/05 ,  C23C14/028 ,  C23C18/14 ,  C30B5/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2454 ,  H01L39/2461 ,  H01L39/248 ,  Y10S428/93

    摘要： The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO2 and/or HfO2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO2 and HfO2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10−5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

    摘要翻译： 本发明涉及一种具有改进的缓冲层结构的制品，其包括具有金属表面的基底和在基底表面上的外延缓冲层。 外延缓冲层包括由ZrO 2，HfO 2和具有稳定立方相的ZrO 2和/或HfO 2的Ca和稀土元素中的至少一种的化合物中的至少一种。 该物品还可以包括沉积在外延缓冲层上的超导层。 该制品还可以包括在外延缓冲层和超导层之间的外延覆盖层。 一种用于制备外延物品的方法包括：向基底提供金属表面;在所述金属表面上沉积包含至少一种选自ZrO 2，HfO 2和至少一种Ca和 稀土元素稳定ZrO 2和HfO 2中的至少一种的立方相。 外延层沉积步骤在背景压力不超过1×10 -5乇的真空中进行。 该方法还可以包括在外延层上沉积超导层，以及在外延缓冲层和超导层之间沉积外延覆盖层。

    Contextually Aware Mobile Device
    8.
    发明申请
    Contextually Aware Mobile Device 审中-公开
    上下文感知移动设备

    公开(公告)号：US20150087327A1

    公开(公告)日：2015-03-26

    申请号：US14033482

    申请日：2013-09-22

    申请人： Amit Goyal

    发明人： Amit Goyal

    IPC分类号： H04W4/02

    CPC分类号： H04W12/08 ,  G01C21/36 ,  G01S19/34 ,  H04W4/027 ,  H04W64/006

    摘要： A method for determining if a mobile device is in a vehicle includes monitoring an acceleration of the mobile device for a time interval during a period of time. The method also includes calculating one or more characteristics of the acceleration of the mobile device during the time interval and comparing the one or more characteristics of the acceleration to a set of threshold values. The method further includes determining the state of the mobile device based on the comparison of the one or more characteristics of the acceleration to the set of threshold values, wherein the state of the mobile device includes an in-vehicle state, a non-vehicle state.

    摘要翻译： 一种用于确定移动设备是否在车辆中的方法包括在一段时间内监视移动设备的加速度一段时间间隔。 该方法还包括在时间间隔期间计算移动设备的加速度的一个或多个特性，并将加速度的一个或多个特性与一组阈值进行比较。 该方法还包括基于加速度的一个或多个特征与阈值集合的比较来确定移动设备的状态，其中移动设备的状态包括车载状态，非车辆状态 。