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175 条记录 (耗时 0.045 秒)

    Plasma immersion ion implantation process
    91.
    发明授权
    Plasma immersion ion implantation process 有权
    等离子体浸没离子注入工艺

    公开(公告)号：US07094670B2

    公开(公告)日：2006-08-22

    申请号：US11046661

    申请日：2005-01-28

    申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    IPC分类号： H01L21/42 ,  H01L21/425 ,  H01L21/205

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

    摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

    摘要翻译： 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近，通过在工件上进行等离子体浸没离子注入 将植入物种前体气体引入室中并产生等离子体，同时使沉积最小化并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件蚀刻阈值温度的温度范围内来最小化蚀刻。

    Monitoring a metal layer during chemical mechanical polishing
    92.
    发明申请
    Monitoring a metal layer during chemical mechanical polishing 有权
    在化学机械抛光期间监测金属层

    公开(公告)号：US20060154570A1

    公开(公告)日：2006-07-13

    申请号：US11355418

    申请日：2006-02-15

    申请人： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    发明人： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    IPC分类号： B24B49/00

    CPC分类号： B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

    摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

    摘要翻译： 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

    RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
    93.
    发明申请
    RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor 有权
    RF测量反馈控制和等离子体浸入式离子注入反应器的诊断

    公开(公告)号：US20060088655A1

    公开(公告)日：2006-04-27

    申请号：US10971772

    申请日：2004-10-23

    申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

    发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

    IPC分类号： C23C14/00 ,  C23C16/52

    CPC分类号： H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

    摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

    摘要翻译： 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， 然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

    Plasma immersion ion implantation reactor having an ion shower grid
    95.
    发明申请
    Plasma immersion ion implantation reactor having an ion shower grid 失效
    具有离子喷淋格栅的等离子体浸没离子注入反应器

    公开(公告)号：US20060019477A1

    公开(公告)日：2006-01-26

    申请号：US10896113

    申请日：2004-07-20

    申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

    发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

    IPC分类号： H01L21/425

    CPC分类号： H01J37/32412 ,  C23C14/48 ,  H01J37/32357 ,  H01L21/2236 ,  H01L21/31612

    摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid, and furnishing the selected species into the ion generation region in gaseous, molecular or atomic form and evacuating the process region at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region of about a factor of at least four. The process further includes applying plasma source power to generate a plasma of the selected species in the ion generation region, and applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region. The process also includes applying a sufficient bias voltage to at least one of: (a) the workpiece, (b) the grid, relative to at least one of: (a) the workpiece, (b) a plasma in the ion generation region, (c) a surface of the chamber, to accelerate the flux of ions to a kinetic energy distribution generally corresponding to the desired ion implantation depth profile in the workpiece.

    摘要翻译： 用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域， 具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。 该方法包括将工件放置在工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面，并且将所选择的物质以气态，分子或原子形式提供给离子产生区域并排空工艺区域 其排气速率足以在离子喷淋格栅上从离子产生区域到达至少四倍的因子的过程区域产生压降。 该方法还包括施加等离子体源功率以在离子产生区域中产生所选择的物质的等离子体，以及将栅极电位施加到离子淋浴栅格以产生离子通过栅格离子并进入过程区域的通量。 该方法还包括向以下至少一个施加足够的偏置电压：（a）工件，（b）栅格，相对于以下至少一个：（a）工件，（b）离子产生区域中的等离子体 ，（c）室的表面，以将离子通量加速到通常对应于工件中期望的离子注入深度分布的动能分布。

    Chemical vapor deposition plasma process using plural ion shower grids
    97.
    发明申请
    Chemical vapor deposition plasma process using plural ion shower grids 有权
    使用多个离子淋浴网格的化学气相沉积等离子体工艺

    公开(公告)号：US20050214478A1

    公开(公告)日：2005-09-29

    申请号：US10873600

    申请日：2004-06-22

    申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

    发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

    IPC分类号： C23C16/00 ,  C23C16/40 ,  C23C16/452 ,  C23C16/517

    CPC分类号： C23C16/452 ,  C23C16/402 ,  C23C16/517

    摘要： A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece is placed in the process region, so that a workpiece surface of the workpiece is generally facing a surface plane of the nearest one of the ion shower grids, and a gas mixture comprising a deposition precursor species is furnished into the ion generation region. The process region is evacuated at an evacuation rate sufficient to create a pressure drop across the plural ion shower grids between the ion generation and process regions whereby the pressure in the ion generation region is several times the pressure in the process region. The process further includes applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region and applying successive grid potentials to successive ones of the grids.

    摘要翻译： 化学气相沉积工艺在具有一组多个并联离子淋浴网格的反应室中进行，该平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 将工件放置在工艺区域中，使得工件的工件表面通常面向最接近的一个离子淋浴栅格的表面，并且将包含沉积前体物质的气体混合物配备到离子产生区域中。 处理区域以足以在离子产生和处理区域之间的多个离子淋浴栅格之间产生压降的抽空速率抽真空，由此离子产生区域中的压力是处理区域中压力的几倍。 该方法还包括施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，并将连续的栅格电势施加到连续的栅极。