摘要:
A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
摘要:
Drive technology is provided which makes suitable low velocity driving and smooth changing of driving velocity possible and achieves reduced power consumption. In the driving device, the drive unit is driven which engages with drive shaft which moves back and forth in tandem with extension and contraction of the piezoelectric element. In this driving device, when the output cycle for cycle Te is repeated such that the voltages applied to the piezoelectric element 11 are the maximum value (+Vp), the minimum value (−Vp), and the middle value (0V), the movement velocity of the drive unit 13 can be changed by thinning the output cycle at cycle Tf. As a result, suitable low velocity driving can be carried out and power consumption can be reduced in the drive unit.
摘要:
If it is judged by a signal from a first signal processing unit that a signal of a first communication system is not received and it is judged by a signal from a second signal processing unit that a signal of a second communication system is received, wireless communication is performed by the second communication system. If it is judged that the signals of the first and the second communication systems are received, a system judging unit judges which communication system is to be used for the wireless communication, based on the signals from the first signal processing unit and the second signal processing unit. If the wireless communication is to be performed by the first communication system, diversity reception or transmission is performed by first and second antenna elements.
摘要:
The present invention concerns an image-forming apparatus for forming an image on a recording material, an area of which is wider than that of a standard fixed-form size having a predetermined fixed-form size, based on an original image recorded on a document. The image-forming apparatus includes a plurality of recording material storing devices in each of which the recording material can be stored; an input section to establish information in regard to a size of the recording material stored in one of the recording material storing devices, as setting information corresponding to each of the recording material storing devices; a memory section to store the setting information corresponding to each of the recording material storing devices; and a control section to determine controlling conditions based on the setting information and to control operations of the image-forming apparatus based on the controlling conditions; wherein the setting information include the standard fixed-form size and longitudinal and lateral lengths of the recording material.
摘要:
A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown in that order on the buffer region. A heterojunction is created between p-type substrate and n-type buffer region. Carrier transportation from substrate to buffer region is expedited by the interface levels of the heterojunction, with a consequent reduction of the drive voltage requirement of the LED.
摘要:
A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type indium gallium nitride. Further grown epitaxially on the buffer layers is the main semiconductor region of the LED which comprises a lower confining layer of n-type gallium nitride, an active layer for generating light, and an upper confining layer of p-type gallium nitride. In the course of the growth of the main semiconductor region there occurs a thermal diffusion of aluminum, gallium and indium from the buffer layers into the p-type silicon substrate, with the consequent creation of an alloy layer of the diffused metals. Representing p-type impurities in the p-type silicon substrate, these metals do not create a pn junction in the substrate which causes a forward voltage drop.
摘要:
An image forming apparatus for forming an image on a recording sheet whose area is larger than that of a predetermined size-fixed recording sheet, comprises an image forming member for forming an image on the recording sheet; a sheet feeder to feed the recording sheet to the image forming member; a controller to control the image forming member so as to form an image on the recording sheet such that a first central point of the recording sheet defined in terms of a main scanning direction perpendicular to a feeding direction of the recording sheet by the sheet feeder is placed on a first center line of the image, wherein the first center line is perpendicular to the main scanning direction, and one side of the image is parallel to one side of the recording sheet.
摘要:
An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.
摘要:
An image forming apparatus is provided which is capable of forming images on recording materials of various types and sizes. The image forming apparatus includes a storing member for storing recording materials having an arbitrary size, a size-information input device for inputting size information corresponding to the arbitrary size of the recording materials, and a controller for controlling an image forming operation according to the size information inputted by the size-information input device. The size information input by the size-information input device includes each of arbitrary values corresponding to longitudinal and lateral lengths of the recording materials.
摘要:
A rotating machine having a stator core and coolers for cooling a cooling medium which is circulated inside the machine by the rotation of a fan installed near a rotating axis of the rotating machine. The coolers being installed in a ventilation passage for the cooling medium and including at least one cooler installed in one ventilation passage extending from an exhaust side of the fan to a suction side of the fan via the stator core, and at least another cooler installed in another ventilation passage extending from the exhaust side of the fan in the one ventilation passage to an inside of an inner surface of the stator core.