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    193NM Laser And Inspection System
    91.
    发明申请
    193NM Laser And Inspection System 有权
    193NM激光和检测系统

    公开(公告)号：US20150155680A1

    公开(公告)日：2015-06-04

    申请号：US14586646

    申请日：2014-12-30

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  Yujun Deng ,  John Fielden

    IPC: H01S3/108

    CPC classification number: H01S3/1083 ,  G01N21/84 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/3536 ,  G02F1/39 ,  G02F2001/3507 ,  G02F2201/16 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/067

    Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

    Abstract translation: 用于产生约193.4nm的输出波长的激光器包括基本激光器，光参量发生器，第四谐波发生器和混频模块。 耦合到基本激光器的光学参数发生器可以产生下变频信号。 可以耦合到光学参数发生器或基本激光器的第四谐波发生器可以产生四次谐波。 耦合到光参量发生器和第四谐波发生器的混频模块可产生频率等于下变频信号频率的四次谐波和两倍的频率的激光输出。

    Multi-Spot Illumination For Improved Detection Sensitivity
    92.
    发明申请
    Multi-Spot Illumination For Improved Detection Sensitivity 有权
    多点照明提高检测灵敏度

    公开(公告)号：US20150041666A1

    公开(公告)日：2015-02-12

    申请号：US14455161

    申请日：2014-08-08

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  John Fielden ,  Ivan Maleev

    IPC: G01N21/95 ,  G01J1/04

    CPC classification number: G01N21/9501 ,  G01J1/04 ,  G01N21/8806

    Abstract: Methods and systems for minimizing interference among multiple illumination beams generated from a non-uniform illumination source to provide an effectively uniform illumination profile over the field of view of an inspection system are presented. In some examples, a pulsed beam of light is split into multiple illumination beams such that each of the beams are temporally separated at the surface of the specimen under inspection. In some examples, multiple illumination beams generated from a non-uniform illumination source are projected onto spatially separated areas on the surface of the specimen. A point object of interest illuminated by each area is imaged onto the surface of a time-delay integration (TDI) detector. The images are integrated such that the relative position of the illumination areas along the direction of motion of the point object of interest has no impact on the illumination efficiency distribution over the field of view.

    Abstract translation: 提出了用于最小化从不均匀照明源产生的多个照明光束之间的干扰的方法和系统，以在检查系统的视场上提供有效均匀的照明轮廓。 在一些示例中，脉冲光束被分成多个照明光束，使得每个光束在被检查的样品的表面处在时间上分离。 在一些示例中，从不均匀照明源产生的多个照明光束投影到样本表面上的空间分离的区域上。 由每个区域照明的感兴趣的点对象被成像到时间延迟积分（TDI）检测器的表面上。 图像被集成为使得照明区域沿着感兴趣点对象的运动方向的相对位置对视场的照明效率分布没有影响。

    CW DUV Laser With Improved Stability
    93.
    发明申请
    CW DUV Laser With Improved Stability 有权
    CW DUV激光器具有改进的稳定性

    公开(公告)号：US20140362880A1

    公开(公告)日：2014-12-11

    申请号：US14294019

    申请日：2014-06-02

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Chuang ,  Xiaoxu Lu ,  John Fielden

    IPC: H01S3/109

    CPC classification number: H01S3/109 ,  G02F1/353 ,  G02F1/3534 ,  G02F1/3558 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2201/17 ,  G02F2203/15 ,  H01S3/0092

    Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more periodically poled non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and one of a fourth harmonic generator module and a fifth harmonic generator. The fourth harmonic generator module includes a cavity resonant at the fundamental frequency configured to combine the fundamental frequency with the third harmonic to generate a fourth harmonic. The fourth harmonic generator module includes either a cavity resonant at the fundamental frequency for combining the fundamental frequency with the third harmonic to generate a fifth harmonic, or a cavity resonant at the second harmonic frequency for combining the second harmonic and the third harmonic to generate the fifth harmonic.

    Abstract translation: 深紫外（DUV）连续波（CW）激光器包括配置为产生具有在约1μm和1.1μm之间的相应波长的基频的基本CW激光器;三次谐波发生器模块，包括一个或多个周期性极化非线性 产生三次谐波和可选的二次谐波的线性光学（NLO）晶体，以及四次谐波发生器模块和五次谐波发生器之一。 第四谐波发生器模块包括在基频处谐振的腔体，其被配置为将基频与三次谐波组合以产生第四谐波。 第四谐波发生器模块包括在基频处共振的腔体，用于将基频与三次谐波组合以产生五次谐波，或者在二次谐波频率下共振谐振以组合二次谐波和三次谐波，以产生 五次谐波。

    Photomultiplier Tube, Image Sensor, And an Inspection System Using A PMT Or Image Sensor
    94.
    发明申请
    Photomultiplier Tube, Image Sensor, And an Inspection System Using A PMT Or Image Sensor 有权
    光电倍增管，图像传感器和使用PMT或图像传感器的检测系统

    公开(公告)号：US20140291493A1

    公开(公告)日：2014-10-02

    申请号：US14198175

    申请日：2014-03-05

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

    IPC: H01L31/11 ,  H01L31/167

    CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

    Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

    Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及形成在p掺杂半导体层的第二表面上的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

    Photocathode including silicon substrate with boron layer
    96.
    发明授权
    Photocathode including silicon substrate with boron layer 有权

    公开(公告)号：US11081310B2

    公开(公告)日：2021-08-03

    申请号：US16177144

    申请日：2018-10-31

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  John Fielden

    IPC: H01J43/00 ,  H01J29/38 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  G02B21/12 ,  G01N21/95 ,  H01L27/148 ,  H01L27/146

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Dual-column-parallel CCD sensor and inspection systems using a sensor
    98.
    发明授权
    Dual-column-parallel CCD sensor and inspection systems using a sensor 有权

    公开(公告)号：US10313622B2

    公开(公告)日：2019-06-04

    申请号：US15337604

    申请日：2016-10-28

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

    IPC: H04N5/378 ,  G01N21/95 ,  G06T7/00 ,  H01L27/148 ,  H04N5/372 ,  H04N5/361

    Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

    183 nm CW Laser and Inspection System
    99.
    发明申请
    183 nm CW Laser and Inspection System 审中-公开

    公开(公告)号：US20190107766A1

    公开(公告)日：2019-04-11

    申请号：US16205032

    申请日：2018-11-29

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Baigang Zhang ,  John Fielden ,  Vladimir Dribinski

    IPC: G02F1/35 ,  G02F1/355

    CPC classification number: G02F1/353 ,  G02F1/3501 ,  G02F1/3551 ,  G02F1/3558 ,  G02F2001/3503 ,  G02F2001/354 ,  G02F2201/16

    Abstract: A laser assembly generates continuous wave (CW) laser output light in the range of approximately 181 nm to approximately 185 nm by generating fourth harmonic light from first fundamental CW light having a first fundamental wavelength between 1 μm and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and then mixing the fifth harmonic light with second fundamental or signal CW light having a second wavelength between 1.26 μm and 1.82 μm. The fifth harmonic light is generated using an external cavity that circulates first fundamental CW light through a first nonlinear crystal, and by directing the fourth harmonic light through the first nonlinear crystal. The laser output light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.

    Photocathode including silicon substrate with boron layer
    100.
    发明授权
    Photocathode including silicon substrate with boron layer 有权

    公开(公告)号：US10199197B2

    公开(公告)日：2019-02-05

    申请号：US15353980

    申请日：2016-11-17

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  John Fielden

    IPC: H01J5/16 ,  H01J29/38 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  G02B21/12 ,  G01N21/95 ,  H01L27/146 ,  H01L27/148

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

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