公开(公告)号：US5770818A

公开(公告)日：1998-06-23

申请号：US636557

申请日：1996-04-23

申请人： Yoshiyuki Tanaka ,  Kouji Koike ,  Masataka Suzuki ,  Hiroyuki Ashiya

发明人： Yoshiyuki Tanaka ,  Kouji Koike ,  Masataka Suzuki ,  Hiroyuki Ashiya

IPC分类号： B60R16/027 ,  B60R16/02 ,  H01R4/70 ,  H01R35/02 ,  H01R35/04 ,  H01R43/00 ,  H01R43/24 ,  H01R4/00 ,  H01R4/02

CPC分类号： B60R16/027 ,  H01R12/61 ,  H01R35/025 ,  H01R43/24

摘要： A cover plate for covering exposed conductive wires of a flat cable is attached to a surface of an attaching plate for holding the flat cable, and insert molding is performed in such a manner that the cover plate is included. Therefore, direct contact of a portion of flows of synthetic resin for use in performing insert molding that flows along a surface of the attaching plate for holding the flat cable with conductive wires of the flat cable can be prevented. Moreover, if the synthetic resin introduced into another surface of the attaching plate for holding the electric wires flows in joint portions between the conductive wires, the conduction wires of the flat cable are pushed against the cover plate due to the flow of the synthetic resin so that the conductive wires of the flat cable are supported. Thus, the conductive wires of the flat cable can be protected from excess stress when the insert molding operation is performed. Thus, breakage of the conductive wires of the flat cable can be prevented.

摘要翻译： 用于覆盖扁平电缆的暴露的导电线的盖板被附接到用于保持扁平电缆的安装板的表面，并且以包括盖板的方式进行插入成型。 因此，可以防止用于进行插入成型的一部分合成树脂流的直接接触，所述插入成型沿着用于保持扁平电缆的连接板的表面流过扁平电缆的导线。 此外，如果引入到用于保持电线的连接板的另一表面中的合成树脂在导线之间的接合部分中流动，则由于合成树脂的流动，扁平电缆的导线被推到盖板上 扁平电缆的导线被支撑。 因此，当进行插入成型操作时，可以保护扁平电缆的导线免受过度应力。 因此，可以防止扁平电缆的导线断裂。

公开(公告)号：US5615165A

公开(公告)日：1997-03-25

申请号：US576564

申请日：1995-12-21

申请人： Tomoharu Tanaka ,  Masaki Momodomi ,  Hideo Kato ,  Hiroto Nakai ,  Yoshiyuki Tanaka ,  Riichiro Shirota ,  Seiichi Aritome ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Hiroshi Nakamura ,  Hideko Odaira ,  Yutaka Okamoto ,  Masamichi Asano ,  Kaoru Tokushige

发明人： Tomoharu Tanaka ,  Masaki Momodomi ,  Hideo Kato ,  Hiroto Nakai ,  Yoshiyuki Tanaka ,  Riichiro Shirota ,  Seiichi Aritome ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Hiroshi Nakamura ,  Hideko Odaira ,  Yutaka Okamoto ,  Masamichi Asano ,  Kaoru Tokushige

IPC分类号： G06F11/10 ,  G11C16/10 ,  G11C16/12 ,  G11C16/24 ,  G11C16/34 ,  G11C29/00 ,  G11C29/34 ,  G11C29/52 ,  G11C13/00

CPC分类号： G11C29/785 ,  G06F11/1008 ,  G11C16/10 ,  G11C16/12 ,  G11C16/24 ,  G11C16/3436 ,  G11C16/344 ,  G11C16/3454 ,  G11C29/34 ,  G11C29/52 ,  G06F11/1068 ,  G06F2201/81 ,  G06F2212/2022

摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

摘要翻译： 可以缩短程序验证和擦除验证操作所需的时间。 即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。 在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。 在数据重写操作中，通过改变数据寄存器中的数据，对具有一次适当写入的数据的存储单元不进行重写操作。

公开(公告)号：US5602789A

公开(公告)日：1997-02-11

申请号：US518024

申请日：1995-08-22

申请人： Tetsuo Endoh ,  Riichiro Shirota ,  Kazunori Ohuchi ,  Ryouhei Kirisawa ,  Seiichi Aritome ,  Tomoharu Tanaka ,  Yoshiyuki Tanaka

发明人： Tetsuo Endoh ,  Riichiro Shirota ,  Kazunori Ohuchi ,  Ryouhei Kirisawa ,  Seiichi Aritome ,  Tomoharu Tanaka ,  Yoshiyuki Tanaka

IPC分类号： G11C11/56 ,  G11C16/34 ,  G11C29/50 ,  G01R31/28

CPC分类号： G11C16/3418 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3404 ,  G11C16/3413 ,  G11C16/3431 ,  G11C16/3459 ,  G11C29/50 ,  G06F2201/81 ,  G11C16/04 ,  G11C2029/0403 ,  G11C2211/5621

摘要： An EEPROM for storing multi-level data includes a memory cell array in which electrically erasable and programmable memory cells are arranged in matrix and each of the memory cells has at least three storage states, a write circuit for writing data to the memory cells, first and second write verify means each constituted of a sense amplifier, a data latch circuit and a detection circuit, for verifying an insufficient-written state of a memory cell and an excess-written state of a memory cell, respectively, an additional write circuit for additionally writing data to the memory cell in the insufficient-written state, and an additional erase circuit for additionally erasing data from the memory cell in the excess-written state.

摘要翻译： 用于存储多级数据的EEPROM包括存储单元阵列，其中电可擦除可编程存储器单元被排列成矩阵，并且每个存储单元具有至少三个存储状态，第一存储单元写入数据的写入电路 以及分别由读出放大器，数据锁存电路和检测电路构成的第二写入验证装置，用于分别验证存储器单元的写入不足状态和存储单元的过量写入状态，附加写入电路 在写入状态不足的情况下向存储器单元写入数据，以及附加擦除电路，用于在超量写入状态下从存储单元附加擦除数据。

公开(公告)号：US5506071A

公开(公告)日：1996-04-09

申请号：US140028

申请日：1993-10-27

申请人： Yoshiyuki Tanaka ,  Takaaki Itoh ,  Masatoshi Abe

发明人： Yoshiyuki Tanaka ,  Takaaki Itoh ,  Masatoshi Abe

IPC分类号： H01C1/024 ,  H01T1/24 ,  H01T4/12 ,  H01M2/34

CPC分类号： H01C1/024 ,  H01T1/24 ,  H01T4/12

摘要： A surge absorber 20 is produced by sealing a glass tube 10 by sealing electrodes 11 and 12 in state that the glass tube 10 is incorporated with a surge absorbing element 13 and with inert gas 14. The sealing electrode is constructed of an electrode member 11a made of alloy containing iron and nickel, and a copper thin film 11b or 21b of a predetermined thickness formed on both surfaces of this electrode member or only on one-side surface in contact with the glass tube and facing on an inside of the glass tube. A Cu.sub.2 O film 11c may preferably be formed on a surface of the copper thin film. This sealing electrode can be sealed in an inert gas atmosphere and has a satisfactory sealability to the glass tube with an electron emission accelerating action. In case where the copper thin film is formed on both surfaces of the electrode member, a lead wire can easily be soldered on an outer surface of the sealing electrode. The surge absorber sealed by this sealing electrode, at the time of sealing and arc discharging, is hardly deteriorated of its conductive coating and micro-gap, and has a higher surge resistance with a long service life.

摘要翻译： PCT No.PCT / JP93 / 00234 Sec。 371日期：1993年10月27日 102（e）日期1993年10月27日PCT 1993年2月25日PCT公布。 出版物WO93 / 17475 日期：1993年9月2日。浪涌吸收器20是通过在玻璃管10与浪涌吸收元件13和惰性气体14结合的状态下密封电极11和12来密封玻璃管10.密封电极 由包含铁和镍的合金制成的电极构件11a和形成在该电极构件的两个表面上的仅具有与玻璃管接触的单侧表面上的预定厚度的铜薄膜11b或21b构成 玻璃管内部。 优选在铜薄膜的表面上形成Cu 2 O膜11c。 该密封电极可以被密封在惰性气体气氛中，并且对于具有电子发射加速作用的玻璃管具有令人满意的密封性。 在铜电极形成在电极构件的两面上的情况下，引线可以容易地焊接在密封电极的外表面上。 在密封和电弧放电时由该密封电极密封的浪涌吸收器几乎不劣化其导电涂层和微间隙，并且具有较高的耐冲击性，使用寿命长。

公开(公告)号：US5268867A

公开(公告)日：1993-12-07

申请号：US957001

申请日：1992-10-06

申请人： Masaki Momodomi ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Tomoharu Tanaka ,  Yoshiyuki Tanaka

发明人： Masaki Momodomi ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Tomoharu Tanaka ,  Yoshiyuki Tanaka

IPC分类号： G11C11/409 ,  G11C5/14 ,  G11C7/10 ,  G11C16/06 ,  G11C16/20 ,  G11C16/26 ,  G11C7/00

CPC分类号： G11C7/1048 ,  G11C16/20 ,  G11C16/26 ,  G11C5/147

摘要： The present invention provides a semiconductor memory device capable of reducing its current consumption, controlling the generation of noise, and increasing in access using a precharge voltage applied to a precharge circuit. In the semiconductor memory device, a precharge circuit is connected to a pair of data input/output lines, and includes a MOS transistor connected between one of the data input/output lines and a node of a precharge voltage and a MOS transistor connected between the other data input/output line and a node of the precharge voltage. The gates of the MOS transistors are supplied with control signals so that the MOS transistors are turned on when the data input/output lines are precharged. A MOS transistor is connected to the data input/output lines for equalizing them. The precharge voltage is set to half of a value obtained by subtracting the threshold voltage of the MOS transistor from the power supply voltage.

摘要翻译： 本发明提供一种半导体存储器件，其能够降低其电流消耗，控制噪声的产生，并且使用施加到预充电电路的预充电电压来增加存取。 在半导体存储器件中，预充电电路连接到一对数据输入/输出线，并且包括连接在数据输入/输出线之一和预充电电压的节点之间的MOS晶体管和连接在 其他数据输入/输出线和预充电电压的节点。 MOS晶体管的栅极被提供控制信号，使得当数据输入/输出线被预充电时MOS晶体管导通。 MOS晶体管连接到数据输入/输出线，以使它们均衡。 预充电电压被设定为通过从电源电压减去MOS晶体管的阈值电压而获得的值的一半。

公开(公告)号：US09009387B2

公开(公告)日：2015-04-14

申请号：US12702134

申请日：2010-02-08

申请人： Yoshiyuki Tanaka ,  Makoto Yatabe ,  Takeaki Sato ,  Kazuya Kawamoto

发明人： Yoshiyuki Tanaka ,  Makoto Yatabe ,  Takeaki Sato ,  Kazuya Kawamoto

IPC分类号： G06F12/10 ,  G11C16/10 ,  G06F3/06 ,  G06F12/02 ,  G11C5/14 ,  G11C16/22 ,  G11C29/00

CPC分类号： G11C16/102 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/0664 ,  G06F3/0679 ,  G06F12/0246 ,  G11C5/143 ,  G11C16/225 ,  G11C29/76

摘要： In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal, a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.

摘要翻译： 在使用通过连接器插入到电子设备中以添加其存储功能的存储介质的存储器系统中，存储介质具有接地端子，电源端子，控制端子和数据输入/输出端子， 并且连接器具有顺序地连接到每个端子的功能。 当存储介质插入连接器中时，存储介质的接地端子和控制端子连接到连接器的相应端子，在存储介质的电源端子和数据输入/输出端子连接到存储介质的相应端子 连接器。 因此，当将存储卡插入存储器系统或从存储器系统弹出时，可以提高稳定性。

公开(公告)号：US08824957B2

公开(公告)日：2014-09-02

申请号：US13121940

申请日：2009-10-28

申请人： Shoji Fukuzawa ,  Yoshiyuki Tanaka

发明人： Shoji Fukuzawa ,  Yoshiyuki Tanaka

IPC分类号： H04B3/36 ,  H04W72/02 ,  H04W72/04 ,  H04W84/08 ,  H04B7/155

CPC分类号： H04W72/02 ,  H04B7/15542 ,  H04W72/042 ,  H04W84/08

摘要： Wireless terminal devices (TA) to (TH) each detects whether channel information received from each of repeaters (1111) to (111n) indicates an occupied state or an idle state, and when detecting a channel in an idle state, writes identification information of that channel in a RAM (23). The wireless terminal devices (TA) to (TH) each selects a piece of identification information of a channel among plural pieces of identification information of a channel written in the RAM (23) to start making a call to a channel of the selected identification information.

摘要翻译： 无线终端装置（TA）〜（TH）各自检测从每个中继器（1111）至（111n）接收到的信道信息是否表示占用状态或空闲状态，并且当检测到空闲状态的信道时，写入 该通道在RAM（23）中。 无线终端装置（TA）〜（TH）各自选择在RAM（23）中写入的频道的多条识别信息中的一条信道的识别信息，开始对所选择的识别信息的频道进行呼叫 。

公开(公告)号：US08756401B2

公开(公告)日：2014-06-17

申请号：US10913865

申请日：2004-08-06

申请人： Yoshiyuki Tanaka ,  Makoto Yatabe ,  Takeaki Sato ,  Kazuya Kawamoto

发明人： Yoshiyuki Tanaka ,  Makoto Yatabe ,  Takeaki Sato ,  Kazuya Kawamoto

IPC分类号： G06F12/10

CPC分类号： G11C16/102 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/0664 ,  G06F3/0679 ,  G06F12/0246 ,  G11C5/143 ,  G11C16/225 ,  G11C29/76

摘要： In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal, a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.

摘要翻译： 在使用通过连接器插入到电子设备中以添加其存储功能的存储介质的存储器系统中，存储介质具有接地端子，电源端子，控制端子和数据输入/输出端子， 并且连接器具有顺序地连接到每个端子的功能。 当存储介质插入连接器中时，存储介质的接地端子和控制端子连接到连接器的相应端子，在存储介质的电源端子和数据输入/输出端子连接到存储介质的相应端子 连接器。 因此，当将存储卡插入存储器系统或从存储器系统弹出时，可以提高稳定性。

公开(公告)号：USD686659S1

公开(公告)日：2013-07-23

申请号：US29419198

申请日：2012-04-26

申请人： Yoshiyuki Tanaka ,  Mugio Kawasaki ,  Hiromi Shishiuchi ,  Satoshi Tamai ,  Seiji Kawabata ,  Koji Hara

设计人： Yoshiyuki Tanaka ,  Mugio Kawasaki ,  Hiromi Shishiuchi ,  Satoshi Tamai ,  Seiji Kawabata ,  Koji Hara

公开(公告)号：US20110273088A1

公开(公告)日：2011-11-10

申请号：US13144599

申请日：2009-12-28

申请人： Yoshiyuki Tanaka ,  Tsuyoshi Ogi

发明人： Yoshiyuki Tanaka ,  Tsuyoshi Ogi

IPC分类号： H01T4/00

CPC分类号： H01T4/12 ,  H01T1/20

摘要： [Problems]Disclosed is a surge absorber which can absorb a surge having a long wave tail, wherein a stable sparkover voltage is obtained without applying a discharging aid to electrodes.[Means for Solving the Problems]The surge absorber is comprised of a pair of terminal electrode members (2) which are opposed to each other; and the insulation tube (3) on which the pair of terminal electrode members (2) are disposed on opposite ends thereof and that has a discharge control gas sealed therein. Bulging electrode elements (4) having an expanded center portion (4a) are formed on the inner surfaces of the terminal electrode members (2). The bulging electrode elements (4) contain metal which can emit more electrons than the terminal electrode members (2).

摘要翻译： [问题]公开了一种浪涌吸收器，其可以吸收具有长波尾的浪涌，其中在不向电极施加放电辅助的情况下获得稳定的火花放电电压。 解决问题的手段浪涌吸收器由一对彼此相对的端子电极构件（2）构成; 以及绝缘管（3），其一对端子电极构件（2）在其两端设置并且具有密封在其中的排出控制气体。 在端子电极构件（2）的内表面上形成具有扩大的中心部分（4a）的膨胀电极元件（4）。 膨胀电极元件（4）包含能够比端子电极构件（2）发射更多的电子的金属。