公开(公告)号：US06671140B1

公开(公告)日：2003-12-30

申请号：US09576775

申请日：2000-05-23

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B5139

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0005

摘要： A first magnetic layer (3) is laminated on a magnetic yoke film (2) forming a closed magnetic circuit containing a magnetic gap so as to be magnetically coupled to the magnetic yoke film (2), and a magnetic separation layer (4), a second magnetic layer (5) and an antiferromagnetic layer (6) are laminated on the first magnetic layer (3). Further, a pair of electrodes (1, 7) are formed so that the laminate comprising the above layers is sandwiched between the electrodes. A permanent magnet film 8 is disposed to apply a bias magnetic field to the first magnetic layer (3). The magnetic separation layer (4) is formed of an insulator. Tunnel current is made to flow between the electrodes (1, 7) through the magnetic separation layer (4), and magnetic signals in the magnetic yoke film (2) are detected by using the antiferromagnetic tunnel magnetoresistance effect that the tunnel current is varied in accordance with variation of the difference in the magnetization direction between the first magnetic layer (3) and the second magnetic layer (5).

摘要翻译： 第一磁性层（3）层压在磁轭膜（2）上，形成包含磁隙的闭合磁路以与磁轭膜（2）磁耦合，以及磁分离层（4）， 在第一磁性层（3）上层叠第二磁性层（5）和反铁磁性层（6）。 此外，形成一对电极（1,7），使得包含上述层的层压体夹在电极之间。 设置永磁体膜8以向第一磁性层（3）施加偏置磁场。 磁分离层（4）由绝缘体形成。 使隧道电流通过磁分离层（4）在电极（1,7）之间流动，并且通过使用隧道电流变化的反铁磁隧道磁阻效应来检测磁轭膜（2）中的磁信号 根据第一磁性层（3）和第二磁性层（5）之间的磁化方向的差异的变化。

公开(公告)号：US6026559A

公开(公告)日：2000-02-22

申请号：US225000

申请日：1999-01-04

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G03G15/06 ,  G03G15/10 ,  G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  G11B5/42

CPC分类号： G11B5/3967 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A fabrication process for a complex magnetic head having a reproducing MR head and a recording ID head comprises the steps of forming the MR head, forming an insulator film on the MR head, forming a photoresist frame on the insulator film, forming a top magnetic pole inside the photoresist frame by plating, trimming the top magnetic pole for defining the end width of the ID head while leaving the photoresist frame, and removing the photoresist frame. The photoresist frame protects the underlying films against the trimming and also protects the top magnetic pole film against an etching solution.

摘要翻译： 具有再现MR磁头和记录ID磁头的复磁头的制造方法包括以下步骤：形成MR磁头，在MR磁头上形成绝缘体膜，在绝缘膜上形成光致抗蚀剂框架，形成顶部磁极 通过电镀在光致抗蚀剂框架内部，修剪顶部磁极以限定ID头的端部宽度，同时留下光致抗蚀剂框架，并且去除光致抗蚀剂框架。 光致抗蚀剂框架保护下面的膜免受修剪，并且还保护顶部磁极膜抵抗蚀刻溶液。

公开(公告)号：US5572391A

公开(公告)日：1996-11-05

申请号：US155185

申请日：1993-11-22

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  H01F10/26 ,  H01F10/30 ,  G11B5/235

CPC分类号： H01F10/30 ,  G11B5/127 ,  H01F10/26 ,  Y10S428/90 ,  Y10T428/1171

摘要： A magnetic structure is provided with an alumina layer formed between a ceramic substrate and a soft magnetic layer. The alumina layer has a formative energy of oxide lower than that of the soft magnetic layer to protect diffusion of oxygen to the soft magnetic layer, when the soft magnetic layer is heated to be formed. Further, a bonding glass layer is positioned between the ceramic substrate and the alumina layer, and another ceramic substrate is formed on the soft magnetic layer.

摘要翻译： 磁性结构设置有形成在陶瓷基板和软磁性层之间的氧化铝层。 当软磁性层被加热形成时，氧化铝层具有低于软磁层的氧化层的形成能量，以保护氧扩散到软磁性层。 此外，在陶瓷基板和氧化铝层之间设置接合玻璃层，在软磁性层上形成另一陶瓷基板。

公开(公告)号：US09799822B2

公开(公告)日：2017-10-24

申请号：US14118093

申请日：2012-04-19

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Hideo Ohno ,  Shoji Ikeda ,  Michihiko Yamanouchi

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Hideo Ohno ,  Shoji Ikeda ,  Michihiko Yamanouchi

IPC分类号： H01L29/82 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

公开(公告)号：US08351249B2

公开(公告)日：2013-01-08

申请号：US12297153

申请日：2007-04-09

申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

IPC分类号： G11C11/15

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

公开(公告)号：US20100142264A1

公开(公告)日：2010-06-10

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C7/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US06754051B2

公开(公告)日：2004-06-22

申请号：US10446106

申请日：2003-05-28

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B527

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/4826

摘要： In a spin valve type transducer including two magnetic shield layers, a patterned magnetoresistance element is in direct contact with one of the magnetic shield layers. A permanent magnet layer and an electrode layer are formed on the sides of the patterned magnetoresistance element.

摘要翻译： 在包括两个磁屏蔽层的自旋阀型换能器中，图案化磁阻元件与磁屏蔽层之一直接接触。 在图案化磁阻元件的侧面上形成永磁体层和电极层。

公开(公告)号：US06687082B1

公开(公告)日：2004-02-03

申请号：US09676788

申请日：2000-10-02

申请人： Nobuyuki Ishiwata ,  Tsutomu Ishi ,  Mikiko Saito ,  Hiroaki Honjo ,  Shinsaku Saito ,  Tamaki Toba ,  Yoshihiro Nonaka

发明人： Nobuyuki Ishiwata ,  Tsutomu Ishi ,  Mikiko Saito ,  Hiroaki Honjo ,  Shinsaku Saito ,  Tamaki Toba ,  Yoshihiro Nonaka

IPC分类号： G11B5147

CPC分类号： G11B5/3153 ,  G11B5/3163 ,  Y10T29/49044

摘要： A magnetic head and a manufacturing method of the magnetic head and a magnetic recording and reproducing apparatus used this head, in which the following problem is solved, are provided. A plated film realizing large saturation magnetization Bs about 2T can not realize a high resistivity at the same time, therefore, when this plated film is applied to a magnetic head, the high frequency characteristic is deteriorated. This problem is solved at the present invention. Further, the present invention provides a magnetic head that is low cost and has large saturation magnetization Bs, and has a excellent high frequency characteristic suitable for a high density recording. A magnetic head, in which a coil insulated by insulation layers is disposed between a first magnetic core for recording and a second magnetic core for recording that is disposed to face the first magnetic core for recording via a recording gap, and which executes recording by that a magnetic flux of the first and second magnetic cores for recording excited by the coil is generated from the recording gap, is provided. And at least one of the first and second magnetic cores for recording is composed of a first plated magnetic layer and a second plated magnetic layer in a state that the first plated magnetic layer is disposed at the near side of the recording gap, and saturation magnetization of the first plated magnetic layer is 1.7 T (tesla) or more. And when resistivity of the first plated magnetic layer is defined as &rgr;1 and the thickness of the first plated magnetic layer is defined as &dgr;1, and resistivity of the second plated magnetic layer is defined as &rgr;2, and the thickness of the second plated magnetic layer is defined as &dgr;2, &rgr;1

摘要翻译： 提供了磁头和磁头的制造方法以及使用该磁头的磁记录和再现装置，其中解决了以下问题。 实现大约2T的饱和磁化强度Bs的电镀膜不能同时实现高电阻率，因此当将该镀膜施加到磁头时，高频特性劣化。 在本发明中解决了这个问题。 此外，本发明提供一种低成本，饱和磁化强度高的磁头，并且具有优良的高密度记录特性。 一种磁头，其中通过绝缘层绝缘的线圈被设置在用于记录的第一磁芯和用于记录的第二磁芯之间，用于记录的第二磁芯经由记录间隙设置成面对第一磁芯进行记录，并且执行记录 提供了从记录间隙产生由线圈激发的记录的第一和第二磁芯的磁通量。 并且，第一和第二记录用磁芯中的至少一个由第一镀层磁性层和第二镀覆磁性层构成，第一镀层磁性层设置在记录间隙的近侧，饱和磁化强度 的第一镀层磁性层为1.7T（特斯拉）或更高。 并且，将第一镀层磁性层的电阻率定义为rho1，将第一镀覆磁性层的厚度定义为δ1，将第二镀覆磁性层的电阻率定义为rho2，将第二镀覆磁性层的厚度设为 定义为δ2，rho1

公开(公告)号：US5892641A

公开(公告)日：1999-04-06

申请号：US594918

申请日：1996-01-31

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3906 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3932

摘要： A central region susceptible to medium magnetic field is formed. End regions (13 to 15) sandwich and extend from the ends of the central region, and apply a vertical bias to the central region. These regions are formed on a substrate (1 to 5). The central region comprises a laminate layer having a SAL layer (5), a magnetic separation layer (6), a magnetoresistance layer (8), and an insulating layer (9), these layers being nearer the substrate in the mentioned order. The thicknesses of the individual layers, particularly the thickness of the insulating layer, are controlled to satisfy a relation of the thicknesses and ion milling rates of the layers given as:(.delta..sub.a /R.sub.a)+(.delta..sub.b /R.sub.b)

摘要翻译： 形成易受中等磁场影响的中心区域。 端部区域（13至15）从中心区域的端部夹持并延伸，并向中心区域施加垂直偏压。 这些区域形成在基板（1〜5）上。 中心区域包括具有SAL层（5），磁分离层（6），磁阻层（8）和绝缘层（9）的层压层，这些层以上述顺序靠近基板。 控制各层的厚度，特别是绝缘层的厚度，以满足以下规定的层的厚度和离子研磨速度之间的关系：（Δa/ Ra）+（δb/ Rb） c / Rc）+（δd/ Rd）其中δa和Ra分别是水平偏置层的厚度和离子研磨速率，δb和Rb是磁分离层的厚度，δc和Rc是磁阻的 层和δd和Rd是绝缘层的那些。

公开(公告)号：US5876843A

公开(公告)日：1999-03-02

申请号：US798021

申请日：1997-02-06

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  B32B3/00

CPC分类号： H01L43/08 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/399 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T428/24917

摘要： A surface structure of a magnetoresistive film includes a magnetosensitive portion surrounded by a peripheral portion including at least an electrode film and a magnetic film underlying the electrode film for applying a unidirectional magnetic field onto the magnetosensitive portion. Side edges of the magnetoresistive film are covered by the magnetic film to be separated from the electrode film. An insulation film is on at least a peripheral area of a top surface of the magnetoresistive film so that a part of the electrode film extends on the insulating film so that the top surface of the magnetoresistive film is separated by the insulating film from the electrode film so as to keep an effective area of the magnetoresistive film in an actual area thereof.

摘要翻译： 磁阻膜的表面结构包括由包括至少包括电极膜的周边部分和用于在磁敏部分上施加单向磁场的电极膜下方的磁性膜所包围的磁感应部分。 磁阻膜的侧边缘被磁性膜覆盖以与电极膜分离。 绝缘膜位于至少磁阻膜顶表面的周边区域上，使得电极膜的一部分在绝缘膜上延伸，使得磁阻膜的顶表面被绝缘膜与电极膜分离 以便在其实际区域中保持磁阻膜的有效面积。