公开(公告)号：US20050003619A1

公开(公告)日：2005-01-06

申请号：US10717719

申请日：2003-11-21

申请人： Masayuki Tanaka ,  Atsuhiro Sato ,  Hiroki Yamashita ,  Ichiro Mizushima ,  Yoshio Ozawa

发明人： Masayuki Tanaka ,  Atsuhiro Sato ,  Hiroki Yamashita ,  Ichiro Mizushima ,  Yoshio Ozawa

IPC分类号： H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

摘要： A semiconductor memory encompasses a memory cell matrix, which embraces device isolation films running along the column-direction, arranged alternatively between the cell columns; first conductive layers having top surfaces lower than the device isolation films; inter-electrode dielectrics arranged on the corresponding first conductive layers, the inter-electrode dielectric has a dielectric constant larger than that of silicon oxide; and second conductive layers running along the row-direction, each of the second conductive layers arranged on the inter-electrode dielectric and the device isolation films so that the second conductive layer can be shared by the memory cell transistors arranged along the row-direction belonging to different cell columns.

摘要翻译： 半导体存储器包括存储单元矩阵，其包括沿列方向延伸的器件隔离膜，交替地布置在单元列之间; 第一导电层的顶表面低于器件隔离膜; 布置在相应的第一导电层上的电极间电介质，所述电极间电介质的介电常数大于氧化硅的介电常数; 和沿着行方向延伸的第二导电层，每个第二导电层布置在电极间电介质和器件隔离膜上，使得第二导电层可以被沿着行方向归属布置的存储单元晶体管共享 到不同的细胞柱。

公开(公告)号：US06837177B2

公开(公告)日：2005-01-04

申请号：US09908562

申请日：2001-07-20

申请人： Masayuki Tanaka

发明人： Masayuki Tanaka

IPC分类号： G10K5/00

CPC分类号： G10K5/00

摘要： A whistle (1) has: a mouthpiece which includes an air inlet (4); a first and a second resonance chambers (5a, 5b) to which air is injected through the air inlet via a first and a second air passages (6a, 6b); a first and a second sound outlets (7a, 7b) in the form of openings formed between the air passages and the resonance chambers; and a first and a second air flow converters (9a, 9b) for varying the flow of air between the air passages and the sound outlets. The air flow converters (9a, 9b) are each part of the sound outlets, and have walls (10a, 10b) which are perpendicular to the air passages (6a, 6b). The air flow converters (9a, 9b) create extra higher harmonics, increase sound pressures in the resonance chambers, and shorten rising time of the whistle, so that the whistle quickly produces loud harmonious beats, which is effective to call attention of people.

摘要翻译： 哨子（1）具有：包括空气入口（4）的吸嘴; 经由第一和第二空气通道（6a，6b）从空气入口喷射空气的第一和第二共振室（5a，5b）; 形成在空气通道和谐振室之间的开口形式的第一和第二声音出口（7a，7b）; 以及用于改变空气通道和声音出口之间的空气流的第一和第二气流转换器（9a，9b）。 空气流量转换器（9a，9b）各自是声音出口的一部分，并且具有垂直于空气通道（6a，6b）的壁（10a，10b）。 空气流量转换器（9a，9b）产生额外的高次谐波，增加共振室中的声压，并缩短口哨的上升时间，使得哨声迅速产生响亮的和谐节拍，这对人们的关注是有效的。

公开(公告)号：US06784508B2

公开(公告)日：2004-08-31

申请号：US09803265

申请日：2001-03-09

申请人： Yoshitaka Tsunashima ,  Seiji Inumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Inumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L2978

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US06772045B2

公开(公告)日：2004-08-03

申请号：US10231019

申请日：2002-08-30

申请人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

发明人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

IPC分类号： G06F1900

CPC分类号： H04L12/66 ,  Y10S438/905

摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

摘要翻译： 一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

公开(公告)号：US06767796B2

公开(公告)日：2004-07-27

申请号：US09973744

申请日：2001-10-11

申请人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

发明人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L2128

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76886 ,  H01L29/665

摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

公开(公告)号：US06602771B2

公开(公告)日：2003-08-05

申请号：US09939639

申请日：2001-08-28

申请人： Fumihiko Inoue ,  Masayuki Tanaka

发明人： Fumihiko Inoue ,  Masayuki Tanaka

IPC分类号： H01L213205

CPC分类号： H01L21/823842 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/3144 ,  H01L21/3185 ,  H01L29/6659

摘要： The method for fabricating the semiconductor device comprises the step of: forming a gate insulation film 14 on a semiconductor substrate 10; forming a semiconductor layer 22 containing boron on the gate insulation film 14; forming a silicon nitride film 28 having an Si—H bond concentration in the film immediately after deposited which is below 4.3×1020 cm−3 measured by FT-IR; and patterning the silicon nitride film 28 and the semiconductor layer 22 to form a gate electrode 30 of a semiconductor layer 22 having the upper surface covered by the silicon nitride film 28. Whereby the release of hydrogen in the films in the thermal processing after the silicon nitride film has been formed can be decreased, and the boron penetration from the p-type gate electrode 30p can be suppressed.

公开(公告)号：US06430962B1

公开(公告)日：2002-08-13

申请号：US09784144

申请日：2001-02-16

申请人： Shinichi Miura ,  Masayuki Tanaka ,  Koji Noishiki ,  Shuhei Natani

发明人： Shinichi Miura ,  Masayuki Tanaka ,  Koji Noishiki ,  Shuhei Natani

IPC分类号： F25J300

摘要： In a production method for oxygen, liquid oxygen is taken out from a rectification column of an air separation unit, and is compressed by a pump so that the pressure thereof exceeds the critical pressure. Then, the oxygen is led into a heat exchanger and is heated therein so that the temperature of the oxygen exceeds the critical temperature.

公开(公告)号：US06321566B1

公开(公告)日：2001-11-27

申请号：US09563165

申请日：2000-05-01

申请人： Seiichi Yamamoto ,  Kazuhiko Asahara ,  Masayuki Tanaka

发明人： Seiichi Yamamoto ,  Kazuhiko Asahara ,  Masayuki Tanaka

IPC分类号： F25J300

CPC分类号： F28D9/0062 ,  F25J3/0409 ,  F25J3/04157 ,  F25J3/04187 ,  F25J3/04303 ,  F25J3/04412 ,  F25J3/0486 ,  F25J2205/32 ,  F25J2205/34 ,  F25J2220/52 ,  F25J2290/10 ,  F25J2290/12 ,  F28D2021/0019 ,  F28F2250/104

摘要： Liquid oxygen, which is extracted from the bottom of a lower pressure rectifier and compressed by a liquid oxygen pump to a predetermined supply pressure, is evaporated in a main heat exchanger to prepare an oxygen gas product, while oxygen gas is circulated in the main heat exchanger at a linear velocity which is equal to or higher than the terminal velocity, calculated depending on the supply pressure, of an oxygen droplet having a diameter of 200 &mgr;m. This process effectively prevents precipitation of heavy impurities in the heat exchanger and produces higher pressure oxygen gas at reduced operational costs.

摘要翻译： 从低压整流器的底部抽出并被液氧泵压缩至预定供给压力的液氧在主热交换器中蒸发以制备氧气产物，同时氧气在主热中循环 交换器以等于或高于直径为200μm的氧滴的根据供给压力计算的终端速度的线速度。 该方法有效地防止了热交换器中重杂质的沉淀，并以降低的操作成本产生较高压力的氧气。

公开(公告)号：US6061640A

公开(公告)日：2000-05-09

申请号：US957919

申请日：1997-10-27

申请人： Masayuki Tanaka ,  Katsuyuki Ogawa

发明人： Masayuki Tanaka ,  Katsuyuki Ogawa

IPC分类号： H01L21/02 ,  G05B15/00 ,  H01L21/3065 ,  H01L21/66 ,  G06F17/60

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/32224 ,  Y02P90/22

摘要： Factors which are adversely affecting a specific quality of products are extracted promptly and easily for common use by analyzing the causal relation between product quality data and quality affecting data. The apparatus comprises a memory unit 2 for saving the product quality data and the data which may adversely affect the product quality detected during a processing operation such as a diffusion process at a semiconductor plant, and a multistage multivariate analysis unit 4 for analyzing the relationship between the quality data as object variables and the quality affecting data as explanation variable saved in the memory unit 2. The analysis is conducted at multiple stages to reduce the number of the explanation variables to a fixed number so that possible abnormal items (explanation variables) are automatically screened at each stage, until the abnormal factors are extracted at the last stage.

摘要翻译： 通过分析产品质量数据与质量影响数据之间的因果关系，迅速，轻松地提取对产品特定质量产生不利影响的因素。 该装置包括用于保存产品质量数据的存储器单元2和可能不利地影响在半导体工厂等扩散处理的处理操作期间检测到的产品质量的数据，以及用于分析半导体工厂的扩展处理的多级多元分析单元4 作为对象变量的质量数据和影响数据的质量作为保存在存储器单元2中的解释变量。分析在多个阶段进行以将解释变量的数量减少到固定数量，使得可能的异常项（解释变量） 在每个阶段自动筛选，直到最后阶段提取异常因子。

公开(公告)号：US5985455A

公开(公告)日：1999-11-16

申请号：US95632

申请日：1998-06-11

申请人： Atsuto Tokunaga ,  Yasushi Sawamura ,  Masayuki Tanaka

发明人： Atsuto Tokunaga ,  Yasushi Sawamura ,  Masayuki Tanaka

IPC分类号： C08G59/24 ,  C08G59/62 ,  C08K3/36 ,  C08L63/00 ,  H01L23/29 ,  B32B27/38 ,  H01L21/203

CPC分类号： C08G59/245 ,  C08G59/621 ,  C08K3/36 ,  C08L63/00 ,  H01L23/293 ,  H01L23/295 ,  H01L2924/0002 ,  Y10S524/919 ,  Y10T428/31511 ,  Y10T428/31529

摘要： Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.

摘要翻译： 本文公开了包含环氧树脂（A），固化剂（B）和无机填料的环氧树脂化合物，其特征在于，所述无机填料含有二氧化硅（C）作为必要成分，所述固化剂（B）是 在分子中含有至少两个酚羟基和/或萘酚羟基，所述二氧化硅（C）含有1-99重量％的合成二氧化硅和99-1重量％的天然熔融二氧化硅。 此处还公开了一种其中密封有所述环氧树脂化合物的半导体元件的半导体器件。 环氧树脂化合物在成型时不会引起诸如短丸，树脂剥离，断线，阶段偏移和排气堵塞等问题。 此外，当用作密封材料时，它产生在高温和高湿度下具有良好的可靠性以及良好的耐焊接热的半导体器件。