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159 条记录 (耗时 0.043 秒)

    Method of making capacitor with a sealing liner and semiconductor device comprising same
    93.
    发明授权
    Method of making capacitor with a sealing liner and semiconductor device comprising same 有权
    制造具有密封衬垫的电容器的方法和包括其的半导体器件

    公开(公告)号：US09136319B2

    公开(公告)日：2015-09-15

    申请号：US13332619

    申请日：2011-12-21

    申请人： Ralf Richter

    发明人： Ralf Richter

    IPC分类号： H01L21/20 ,  H01L49/02 ,  H01L21/768

    CPC分类号： H01L28/90 ,  H01L21/76831

    摘要： Generally, the subject matter disclosed herein relates to various methods of making a capacitor with a sealing liner and a semiconductor device including such a capacitor. In one example, the method includes forming a layer of insulating material, forming a capacitor opening in the layer of insulating material, forming a sealing liner on the sidewalls of the capacitor opening and forming a first metal layer in the capacitor opening and on the sealing liner by performing a process using a precursor having a minimum particle size, wherein the sealing liner is made of a material having an opening size that is less than the minimum particle size of the precursor.

    摘要翻译： 通常，本文公开的主题涉及制造具有密封衬垫的电容器和包括这种电容器的半导体器件的各种方法。 在一个实例中，该方法包括形成绝缘材料层，在绝缘材料层中形成电容器开口，在电容器开口的侧壁上形成密封衬垫，并在电容器开口中形成第一金属层和密封 通过进行使用具有最小粒度的前体的方法，其中密封衬里由开口尺寸小于前体的最小粒度的材料制成。

    System And Method For Recovering A Submarine Vehicle
    96.
    发明申请
    System And Method For Recovering A Submarine Vehicle 审中-公开
    一种潜艇车辆的恢复系统和方法

    公开(公告)号：US20140116312A1

    公开(公告)日：2014-05-01

    申请号：US14125971

    申请日：2012-07-19

    申请人： Jorg Kalwa ,  Ralf Richter ,  Sven-Christian Hesse

    发明人： Jorg Kalwa ,  Ralf Richter ,  Sven-Christian Hesse

    IPC分类号： B63B69/00 ,  B63B35/40

    CPC分类号： B63B69/00 ,  B63B27/36 ,  B63B35/40 ,  B63G8/001

    摘要： The invention relates to a system and a method for recovering a submarine vehicle. The submarine vehicle is pulled by a rope and hauled by means of the rope and a recovery ramp from the body of water on board a ship or onto land. The system comprises the recovery ramp and a wave equalization ramp. The wave compensation ramp can be rotated relative to the recovery ramp about a swivel axis S and is supported by a floating body. The watercraft is picked up by means of the recovery ramp. The wave compensation ramp is hauled together with the picked-up submarine vehicle by means of the recovery ramp. The invention permits the recovery of a submarine vehicle, even in moderate or heavy seas, with less risk of damage to the submarine vehicle.

    摘要翻译： 本发明涉及一种用于回收潜艇车辆的系统和方法。 潜艇车辆由绳索牵引，并通过绳索和从船体上的水体或陆地上的水道进行回收。 该系统包括恢复斜坡和波均衡斜坡。 波形补偿斜坡可以围绕旋转轴S相对于恢复斜面旋转，并且由浮体支撑。 通过恢复坡道拾起船只。 波浪补偿斜坡与拾取的潜艇一起通过恢复坡道牵引。 本发明允许潜艇车辆的恢复，即使在中等或大海，潜艇风险也较小。

    Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates
    97.
    发明授权
    Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates 有权
    在包括金属栅极的半导体器件中，在较低高度处形成半导体电阻器

    公开(公告)号：US08658509B2

    公开(公告)日：2014-02-25

    申请号：US12907731

    申请日：2010-10-19

    申请人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

    发明人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

    IPC分类号： H01L21/20 ,  H01L27/06

    CPC分类号： H01L29/66545 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/6659 ,  H01L29/7833

    摘要： In sophisticated semiconductor devices comprising high-k metal gate electrode structures formed on the basis of a replacement gate approach, semiconductor-based resistors may be provided without contributing to undue process complexity in that the resistor region is recessed prior to depositing the semiconductor material of the gate electrode structure. Due to the difference in height level, a reliable protective dielectric material layer is preserved above the resistor structure upon exposing the semiconductor material of the gate electrode structure and removing the same on the basis of selective etch recipes. Consequently, well-established semiconductor materials, such as polysilicon, may be used for the resistive structures in complex semiconductor devices, substantially without affecting the overall process sequence for forming the sophisticated replacement gate electrode structures.

    摘要翻译： 在包括基于替换栅极方法形成的高k金属栅极电极结构的复杂半导体器件中，可以提供基于半导体的电阻器，而不会造成过度的工艺复杂性，因为电阻器区域在沉积半导体材料 栅电极结构。 由于高度水平的差异，在暴露栅极电极结构的半导体材料并基于选择性蚀刻配方将其去除时，可靠的保护介电材料层被保留在电阻器结构之上。 因此，诸如多晶硅的公认的半导体材料可以用于复合半导体器件中的电阻结构，基本上不影响用于形成复杂的替代栅电极结构的整个工艺顺序。

    Method of reducing contamination by providing an etch stop layer at the substrate edge
    99.
    发明授权
    Method of reducing contamination by providing an etch stop layer at the substrate edge 有权
    通过在衬底边缘处提供蚀刻停止层来减少污染的方法

    公开(公告)号：US08426312B2

    公开(公告)日：2013-04-23

    申请号：US11531793

    申请日：2006-09-14

    申请人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

    发明人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

    IPC分类号： H01L21/461

    CPC分类号： H01L21/02087 ,  H01L21/6708 ,  H01L21/76801 ,  H01L21/76877

    摘要： By providing an etch stop layer selectively at the bevel, at least one additional wet chemical bevel etch process may be performed prior to or during the formation of a metallization layer without affecting the substrate material. Hence, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. The etch stop layer may be formed at an early manufacturing stage so that a bevel etch process may be performed at any desired stage of the formation of circuit elements.

    摘要翻译： 通过在斜面上选择性地设置蚀刻停止层，可以在形成金属化层之前或期间执行至少一个附加的湿化学斜面蚀刻工艺，而不影响衬底材料。 因此，在形成任何阻挡层和金属层之前，电介质材料，特别是低k电介质材料可以从斜面被可靠地移除。 蚀刻停止层可以在早期制造阶段形成，从而可以在形成电路元件的任何期望阶段执行斜面蚀刻工艺。

    Reduced topography-related irregularities during the patterning of two different stress-inducing layers in the contact level of a semiconductor device
    100.
    发明授权
    Reduced topography-related irregularities during the patterning of two different stress-inducing layers in the contact level of a semiconductor device 有权
    在半导体器件的接触电平中的两个不同的应力感应层的图案化期间减少了与地形相关的不规则性

    公开(公告)号：US08349740B2

    公开(公告)日：2013-01-08

    申请号：US12623493

    申请日：2009-11-23

    申请人： Ralf Richter

    发明人： Ralf Richter

    IPC分类号： H01L21/311

    CPC分类号： H01L21/823807 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

    摘要： In sophisticated semiconductor devices, stress-inducing materials may be provided above the basic transistor devices without any etch control or etch stop materials, thereby enabling an efficient de-escalation of the surface topography, in particular above field regions including closely spaced polysilicon lines. Furthermore, an additional stress-inducing material may be provided on the basis of the superior surface topography, thereby providing a highly efficient strain-inducing mechanism in performance-driven transistor elements.

    摘要翻译： 在复杂的半导体器件中，可以在基本晶体管器件上方提供应力诱导材料，而无需任何蚀刻控制或蚀刻停止材料，从而能够有效地降低表面形貌，特别是包括紧密间隔的多晶硅线的上述场区域。 此外，可以基于优异的表面形貌提供额外的应力诱导材料，从而在性能驱动的晶体管元件中提供高效的应变诱导机制。