公开(公告)号：US5550389A

公开(公告)日：1996-08-27

申请号：US171869

申请日：1993-12-22

申请人： Toshikazu Nishino ,  Mutsuko Hatano ,  Haruhiro Hasegawa ,  Hideaki Nakane ,  Ushio Kawabe ,  Kazuo Saitoh ,  Mitsuo Suga ,  Kazumasa Takagi

发明人： Toshikazu Nishino ,  Mutsuko Hatano ,  Haruhiro Hasegawa ,  Hideaki Nakane ,  Ushio Kawabe ,  Kazuo Saitoh ,  Mitsuo Suga ,  Kazumasa Takagi

IPC分类号： H01L39/14 ,  H01L29/06

CPC分类号： H01L39/145

摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.

摘要翻译： 通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。 根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。

公开(公告)号：US5272358A

公开(公告)日：1993-12-21

申请号：US796885

申请日：1991-11-25

申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Mutsuko Hatano

发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Mutsuko Hatano

IPC分类号： H01L39/22

CPC分类号： H01L39/228

摘要： In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.

摘要翻译： 在超导装置中，通过设置在超导电极之间的控制电极来控制与半导体接触的两个超导电极之间流过的超导电流的值，在半导体内形成高的杂质浓度区域以便接触 与超导电极并延伸到控制电极的下端。

公开(公告)号：US08759126B2

公开(公告)日：2014-06-24

申请号：US13092226

申请日：2011-04-22

申请人： Takahide Kuranaga ,  Takashi Hattori ,  Naoya Okada ,  Mutsuko Hatano

发明人： Takahide Kuranaga ,  Takashi Hattori ,  Naoya Okada ,  Mutsuko Hatano

IPC分类号： H01L21/00 ,  G02F1/1333

CPC分类号： H01L51/5253 ,  G02F1/133351 ,  H01L51/5256 ,  H01L2251/566

摘要： An image display device comprises: a first substrate having flexure property; a first resin layer which is attached to the first substrate and over which thin film transistors are located; a barrier layer which comprises an inorganic film covering a surface of the resin layer; and a first thin film layer and a second thin film layer which are located so as to sandwich the first resin layer with the barrier layer disposed therebetween.

摘要翻译： 图像显示装置包括：具有弯曲特性的第一基板; 第一树脂层，其附接到第一基板并且薄膜晶体管位于该第一树脂层上; 阻挡层，其包含覆盖所述树脂层的表面的无机膜; 以及第一薄膜层和第二薄膜层，所述第一薄膜层和第二薄膜层被定位成夹在其间设置有阻挡层的第一树脂层。

公开(公告)号：US08482003B2

公开(公告)日：2013-07-09

申请号：US11874955

申请日：2007-10-19

申请人： Mieko Matsumura ,  Yoshiaki Toyota ,  Takeshi Sato ,  Mutsuko Hatano

发明人： Mieko Matsumura ,  Yoshiaki Toyota ,  Takeshi Sato ,  Mutsuko Hatano

IPC分类号： H01L31/00

CPC分类号： H01L29/4908 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/41733 ,  H01L51/56

摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.

摘要翻译： 提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。 栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。 存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。 器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

公开(公告)号：US08377742B2

公开(公告)日：2013-02-19

申请号：US12843977

申请日：2010-07-27

申请人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano

发明人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano

IPC分类号： H01L21/16

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.

摘要翻译： 在薄膜晶体管的制造方法中，采取以下步骤：在由金属氧化物半导体构成的导电层上形成由金属氧化物半导体构成的牺牲层; 在牺牲层之上形成金属膜; 金属膜通过干蚀刻加工; 并且通过该干蚀刻暴露的牺牲层的部分进行湿蚀刻。

公开(公告)号：US08314032B2

公开(公告)日：2012-11-20

申请号：US12838451

申请日：2010-07-17

申请人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

发明人： Tetsufumi Kawamura ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L21/311

CPC分类号： H01L29/7869

摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.

摘要翻译： 一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

公开(公告)号：US08258024B2

公开(公告)日：2012-09-04

申请号：US12606284

申请日：2009-10-27

申请人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

发明人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78696

摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.

摘要翻译： 提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。 该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成 的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。 在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

公开(公告)号：US20110294244A1

公开(公告)日：2011-12-01

申请号：US13114074

申请日：2011-05-24

申请人： Takashi HATTORI ,  Takahide Kuranaga ,  Naoya Okada ,  Mutsuko Hatano

发明人： Takashi HATTORI ,  Takahide Kuranaga ,  Naoya Okada ,  Mutsuko Hatano

IPC分类号： H01L33/08

CPC分类号： H01L27/1218 ,  H01L27/1262 ,  H01L2227/326

摘要： Provided is a method of manufacturing a display device, including: forming a polymer layer which includes an organic material on a principal surface side of a support substrate; forming one of a semiconductor circuit and a display circuit on the polymer layer; irradiating the polymer layer from the support substrate side with light having a wavelength that is absorbed in the polymer layer, to thereby separate the polymer layer from the support substrate; one of thinning and removing the polymer layer; and adhering a first substrate to one of a surface of the polymer layer and a face where the polymer layer has been provided.

摘要翻译： 提供一种制造显示装置的方法，包括：在支撑基板的主表面侧上形成包含有机材料的聚合物层; 在聚合物层上形成半导体电路和显示电路之一; 用具有在聚合物层中吸收的波长的光从支撑衬底侧照射聚合物层，从而将聚合物层与支撑衬底分离; 一个减薄和去除聚合物层; 并将第一基板粘合到聚合物层的表面和设置有聚合物层的面之一。

公开(公告)号：US07969520B2

公开(公告)日：2011-06-28

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间绝缘膜增厚引起的开裂的限制膜厚设定为1.5μm以上。

公开(公告)号：US20090273751A1

公开(公告)日：2009-11-05

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/1333 ,  H01L27/12

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。