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40 条记录 (耗时 0.031 秒)

    Superconducting field effect transistor
    3.
    发明授权
    Superconducting field effect transistor 失效
    超导场效应晶体管

    公开(公告)号：US5317168A

    公开(公告)日：1994-05-31

    申请号：US978454

    申请日：1992-11-19

    申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Fumio Murai ,  Tokuo Kure ,  Mutsuko Hatano ,  Haruhiro Hasegawa

    发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Fumio Murai ,  Tokuo Kure ,  Mutsuko Hatano ,  Haruhiro Hasegawa

    IPC分类号： H01L29/43 ,  H01L39/22

    CPC分类号： H01L29/437

    摘要： A superconducting field effect transistor which is very small in size and high in dimensional accuracy, has a first layer of material forming a control electrode and a second layer of another material is disposed on said first layer. A width of said first layer in a direction toward a superconducting source electrode and a superconducting drain electrode is narrower than a width of the second layer in the same direction. Polycrystalline silicon may be used as the control electrode while the second layer can be made of silicon nitride. Furthermore, a side surface of the control electrode may be coated with an insulator film. Accordingly, the above transistor has a fine structure gate electrode part that can be fabricated easily and accurately.

    摘要翻译： 尺寸非常小，尺寸精度高的超导场效应晶体管具有形成控制电极的第一层材料，另一材料的第二层设置在所述第一层上。 所述第一层在朝向超导源电极和超导漏电极的方向上的宽度比相同方向上的第二层的宽度窄。 多晶硅可以用作控制电极，而第二层可以由氮化硅制成。 此外，控制电极的侧表面可以涂覆有绝缘膜。 因此，上述晶体管具有可以容易且精确地制造的精细结构的栅电极部。

    Light detecting superconducting Josephson device
    8.
    发明授权
    Light detecting superconducting Josephson device 失效
    光检测超导约瑟夫逊装置

    公开(公告)号：US5057485A

    公开(公告)日：1991-10-15

    申请号：US192545

    申请日：1988-05-11

    申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Mutsuko Hatano

    发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Mutsuko Hatano

    IPC分类号： H01L39/10 ,  H01L39/22

    CPC分类号： H01L39/10 ,  H01L39/225 ,  Y10S505/702 ,  Y10S505/817

    摘要： In a device wherein a region which includes a superconducting weak link or a Josephson junction is irradiated with light or an electromagnetic wave so as to detect the light or an electromagnetic wave on the basis of the change of a superconducting critical current or an output voltage; a light-sensitive superconducting device characterized in that the surface of a superconductor lies in contact with a photoconductive semiconductor in at least a part of the whole of the region which is irradiated with the light or the electromagnetic wave.

    摘要翻译： 在利用光或电磁波照射包含超导弱连接区域或约瑟夫逊结的区域的装置中，根据超导临界电流或输出电压的变化来检测光或电磁波; 一种感光超导装置，其特征在于超导体的表面在被光或电磁波照射的整个区域的至少一部分中与光导半导体接触。

    Superconducting device
    10.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5272358A

    公开(公告)日：1993-12-21

    申请号：US796885

    申请日：1991-11-25

    申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Mutsuko Hatano

    发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Mutsuko Hatano

    IPC分类号： H01L39/22

    CPC分类号： H01L39/228

    摘要： In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.

    摘要翻译： 在超导装置中，通过设置在超导电极之间的控制电极来控制与半导体接触的两个超导电极之间流过的超导电流的值，在半导体内形成高的杂质浓度区域以便接触 与超导电极并延伸到控制电极的下端。