摘要:
The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5 mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.
摘要:
Electric discharge laser with active chirp correction. This application discloses techniques for moderating and dispensing these pressure waves. In some lasers small predictable patterns remain which can be substantially corrected with active wavelength control using relatively slow wavelength control instruments of the prior art. In a preferred embodiment a simple learning algorithm is described to allow advance tuning mirror adjustment in anticipation of the learned chirp pattern. Embodiments include stepper motors having very fine adjustments so that size of tuning steps are substantially reduced for more precise tuning. However, complete elimination of wavelength chirp is normally not feasible with structural changes in the laser chamber and advance tuning; therefore, Applicants have developed equipment and techniques for very fast active chirp correction. Improved techniques include a combination of a relatively slow stepper motor and a very fast piezoelectric driver. In another preferred embodiment chirp correction is made on a pulse-to-pulse basis where the wavelength of one pulse is measured and the wavelength of the next pulse is corrected based on the measurement. This correction technique is able to function at repetition rates as rapid as 2000 Hz and greater.
摘要:
A gas discharge laser capable of operating at pulse rates in the range of 4,000 Hz to 6,000 Hz at pulse energies in the range of 5 mJ to 10 mJ or greater. Important improvements over prior art designs include: (1) a laser chamber having a gas flow path with a gradually increasing cross section downstream of the discharge electrodes to permit recovery a large percentage of the pressure drop in the discharge region, (2) a squirrel cage type fan for producing gas velocities through the discharge region of more than 76 m/s and capable of continuous trouble-free operation for several months, (3) a heat exchanger system capable of removing in excess of 16 kw of heat energy from the laser gas (4) a pulse power system capable of providing precisely controlled electrical pulses to the electrodes needed to produce laser pulses at the desired pulse energies in the range of 5 mJ to 10 mJ or greater at pulse repetition rates in the range of 4,000 Hz to 6,000 Hz or greater and (5) a laser beam measurement and control system capable of measuring pulse energy wavelength and bandwidth on a pulse-to-pulse laser with feedback pulse-to-pulse control of pulse energy and wavelength.
摘要:
An improvement over prior art voltage timing compensation circuits is achieved by incorporating a function generator to provide a more accurate non-linear compensation to pulse timing delay, which is typically a non-linear function of voltage. An improvement over prior art temperature timing compensation circuits is achieved by providing for actual temperature measurements to be made and used to drive the timing compensation circuitry for a more accurate temperature timing compensation than provided by prior art temperature synthesis, while still using a relatively simple compensating circuit. In some embodiments a timing compensation circuit combines both voltage and temperature timing compensation.
摘要:
A laser includes a regenerative ring resonator that includes a discharge chamber having electrodes and a gain medium between the electrodes for producing a laser beam; a partially-reflective optical coupler, and a beam modification optical system in the path of the laser beam. The beam modification optical system transversely expands a profile of the laser beam such that the near field laser beam profile uniformly fills each aperture within the laser and such that the regenerative ring resonator remains either conditionally stable or marginally unstable when operating the laser at powers that induce thermal lenses in optical elements inside the regenerative ring resonator.
摘要:
An apparatus and method of operation for a high power broad band elongated thin beam laser annealing light source, which may comprise a gas discharge seed laser oscillator having a resonance cavity, providing a seed laser output pulse; a gas discharge amplifier laser amplifying the seed laser output pulse to provide an amplified seed laser pulse output; a divergence correcting multi-optical element optical assembly intermediate the seed laser and the amplifier laser. The divergence correcting optical assembly may adjust the size and/or shape of the seed laser output pulse within a discharge region of the amplifier laser in order to adjust an output parameter of the amplified seed laser pulse output. The divergence correcting optical assembly may comprise a telescope with an adjustable focus. The adjustable telescope may comprise an active feedback-controlled actuator based upon a sensed parameter of the amplified seed laser output from the amplifier laser.
摘要:
A laser light source experiencing an EOL condition, which might otherwise cause an unscheduled shutdown, is instead operated in a diminished capacity in one or more predetermined or calculated increments. Operating in such diminished capacity continues until the laser system can undergo appropriate maintenance either during a regularly scheduled shutdown or a newly scheduled shutdown. In the meantime, the diminished capacity of the laser system is accommodated by the utilization tool, as appropriate.
摘要:
A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
摘要:
An apparatus includes a first plurality of concave reflecting surfaces; a second plurality of reflecting surfaces facing the first plurality of concave reflecting surfaces such that a region is defined between the first and second pluralities; and an input for an optical beam to enter the region and an output for the optical beam to exit the region. The first and second pluralities of reflecting surfaces are arranged relative to each other so that the optical beam is re-imaged at a reflecting surface of one of the pluralities after only one reflection from a reflecting surface of the other of the pluralities and so that overlap of two or more optical beams on each of the reflecting surfaces is avoided.
摘要:
A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.