公开(公告)号：US20160163374A1

公开(公告)日：2016-06-09

申请号：US15043063

申请日：2016-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G11C11/407

CPC classification number: G11C11/407 ,  G11C5/025 ,  G11C8/08 ,  G11C11/404 ,  G11C11/4097

Abstract: In a memory device, memory capacity per unit area is increased while a period in which data is held is ensured. The memory device includes a driver circuit provided over a substrate, and a plurality of memory cell arrays which are provided over the driver circuit and driven by the driver circuit. Each of the plurality of memory cell arrays includes a plurality of memory cells. Each of the plurality of memory cells includes a first transistor including a first gate electrode overlapping with an oxide semiconductor layer, and a capacitor including a source electrode or a drain electrode, a first gate insulating layer, and a conductive layer. The plurality of memory cell arrays is stacked to overlap. Thus, in the memory device, memory capacity per unit area is increased while a period in which data is held is ensured.

公开(公告)号：US20160140918A1

公开(公告)日：2016-05-19

申请号：US15002981

申请日：2016-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: G09G3/36

CPC classification number: G09G3/20 ,  G02F1/1368 ,  G09G3/3275 ,  G09G3/3607 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2300/0452 ,  G09G2310/0275 ,  G09G2310/0294 ,  G09G2310/0297 ,  G09G2310/08 ,  H01L27/1225

Abstract: Provided is to secure a data-writing period to a source line and reduce the number of the IC chips used. N image data (e.g., three image data, RGB) are sequentially input to one input terminal. Three switches, three first memory elements, three transfer switches, three second memory elements, and three buffers are connected in parallel to the input terminal. The three switches are turned on respectively. RGB image data are held in the three respective first memory elements. In a selection period of a gate line of an (m−1)-th row, image data of an m-th row are written to the first memory elements. When the three transfer switches are turned on in a selection period of a gate line of an m-th row, the image data are transferred to and held in the second memory elements. Then, the image data are output to each source line through each buffer.

Abstract translation: 提供了将数据写入周期保证到源极线并减少使用的IC芯片的数量。 N个图像数据（例如，三个图像数据，RGB）被顺序输入到一个输入端。 三个开关，三个第一存储器元件，三个转换开关，三个第二存储器元件和三个缓冲器并联连接到输入端子。 三个开关分别打开。 RGB图像数据保持在三个相应的第一存储元件中。 在第（m-1）行的栅极线的选择期间，将第m行的图像数据写入第一存储元件。 当在第m行的栅极线的选择周期中三个传送开关导通时，图像数据被传送到并保持在第二存储元件中。 然后，通过每个缓冲器将图像数据输出到每个源线。

公开(公告)号：US20160117033A1

公开(公告)日：2016-04-28

申请号：US14974246

申请日：2015-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G06F3/041 ,  G06F1/32 ,  G02F1/1333 ,  G09G3/36

CPC classification number: G06F3/0412 ,  G02F1/13338 ,  G06F1/3265 ,  G06F3/044 ,  G06F3/045 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  G09G2360/14 ,  Y02D10/153

Abstract: It is an object to provide a semiconductor display device having a touch panel, which can reduce power consumption. The semiconductor display device includes a panel which is provided with a pixel portion and a driver circuit which controls an input of the image signal to the pixel portion, and a touch panel provided in a position overlapping with the panel in the pixel portion. The pixel portion includes a display element configured to perform display in accordance with voltage of the image signal to be input, and a transistor configured to control retention of the voltage. The transistor includes an oxide semiconductor in a channel formation region. The driving frequency of the driver circuit, that is, the number of writing operations of the image signal for a certain period is changed in accordance with an operation signal from a touch panel.

Abstract translation: 本发明的目的是提供一种具有触摸面板的半导体显示装置，其可以降低功耗。 该半导体显示装置包括具有像素部分的面板和控制图像信号对像素部分的输入的驱动电路，以及设置在与像素部分中的面板重叠的位置的触摸面板。 像素部分包括被配置为根据要输入的图像信号的电压进行显示的显示元件和被配置为控制电压的保持的晶体管。 晶体管包括沟道形成区域中的氧化物半导体。 根据来自触摸面板的操作信号，改变驱动电路的驱动频率，即图像信号的写入操作的数量。

公开(公告)号：US20160035275A1

公开(公告)日：2016-02-04

申请号：US14881500

申请日：2015-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/32 ,  H01L29/786 ,  H01L27/32 ,  G09G3/20

CPC classification number: G09G3/3208 ,  G09G3/2003 ,  G09G3/3233 ,  G09G2330/021 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US20150333089A1

公开(公告)日：2015-11-19

申请号：US14807168

申请日：2015-07-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  H01L29/10 ,  H01L29/45 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1229 ,  G09G3/20 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/42372 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

Abstract translation: 本发明的实施例的目的是制造具有高显示质量和高可靠性的半导体器件，其包括能够使用具有良好电特性的晶体管在一个衬底上进行高速操作的像素部分和驱动器电路部分，以及 高可靠性作为开关元件。 在驱动器电路部分和像素部分中形成两个晶体管，每个晶体管的一个表面侧上包括结晶区域的氧化物半导体层用作有源层。 可以通过选择确定通道位置的栅电极层的位置来选择晶体管的电特性。 因此，可以制造包括能够高速操作的驱动电路部分和一个基板上的像素部分的半导体器件。

公开(公告)号：US20150325599A1

公开(公告)日：2015-11-12

申请号：US14801936

申请日：2015-07-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kiyoshi KATO ,  Jun KOYAMA ,  Yutaka SHIONOIRI

IPC: H01L27/12 ,  H01L23/66 ,  H01L23/538 ,  H01L29/786

CPC classification number: H01L27/1222 ,  G06K19/0723 ,  H01L23/5387 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78648 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.

Abstract translation: 本发明提供一种处理器，其通过在对热敏感的基板（例如塑料基板或塑料膜基板）上形成使用多晶半导体的高功能集成电路。 此外，本发明提供一种无线发送和接收电力或信号的无线处理器，无线存储器及其信息处理系统。 根据本发明，一种信息处理系统包括一个元件形成区域，该元件形成区域包括晶体管，该晶体管至少具有由半导体膜形成的沟道形成区域，所述半导体膜片分隔成10至200nm的厚度的岛状物以及天线。 晶体管固定在柔性基板上。 其中形成包括元件形成区域的高功能集成电路并且半导体器件通过天线发送和接收数据的无线处理器。

公开(公告)号：US20150263175A1

公开(公告)日：2015-09-17

申请号：US14641733

申请日：2015-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H01L29/786 ,  G11C19/28 ,  G11C7/12 ,  G11C7/22 ,  G11C11/24 ,  G11C7/06

CPC classification number: G11C5/147 ,  G11C5/146 ,  G11C7/12 ,  G11C11/24 ,  G11C16/3418 ,  G11C19/28 ,  H01L27/1225 ,  H01L29/7869

Abstract: To stably control a threshold voltage of a functional circuit using an oxide semiconductor. A variable bias circuit, a monitoring oxide semiconductor transistor including a back gate, a current source, a differential amplifier, a reference voltage source, and a functional circuit which includes an oxide semiconductor transistor including a back gate are provided. The current source supplies current between a source and a drain of the monitoring oxide semiconductor transistor to generate a gate-source voltage in accordance with the current. The differential amplifier compares the voltage with a voltage of the reference voltage source, amplifies a difference, and outputs a resulting voltage to the variable bias circuit. The variable bias circuit is controlled by an output of the differential amplifier and supplies voltage to the back gate of the monitoring oxide semiconductor transistor and the back gate of the oxide semiconductor transistor included in the functional circuit.

Abstract translation: 为了稳定地控制使用氧化物半导体的功能电路的阈值电压。 提供一种可变偏置电路，包括背栅极，电流源，差分放大器，参考电压源和包括包括背栅的氧化物半导体晶体管的功能电路的监测氧化物半导体晶体管。 电流源在监测氧化物半导体晶体管的源极和漏极之间提供电流，以根据电流产生栅极 - 源极电压。 差分放大器将电压与参考电压源的电压进行比较，放大差值，并将得到的电压输出到可变偏置电路。 可变偏置电路由差分放大器的输出控制，并将电压提供给监视氧化物半导体晶体管的背栅和功能电路中包含的氧化物半导体晶体管的背栅。

公开(公告)号：US20150262642A1

公开(公告)日：2015-09-17

申请号：US14645049

申请日：2015-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: G11C11/406 ,  G11C11/4093 ,  G11C11/4091 ,  G11C5/10 ,  G11C11/24

CPC classification number: G11C11/406 ,  G11C11/24 ,  G11C11/4091 ,  G11C11/4093

Abstract: To provide a semiconductor device which includes a novel refresh circuit in a memory including an oxide semiconductor film. As circuits which operate in a refresh operation of the memory including the oxide semiconductor film, a sense amplifier circuit, a latch circuit, a first switch, and a second switch are provided. In the refresh operation, a potential which reflects a potential stored in the memory is input to the sense amplifier circuit, an output of the sense amplifier circuit is input to the latch circuit, and an output of the latch circuit is written to the memory again through the first switch and a first transistor including an oxide semiconductor in a channel.

Abstract translation: 提供一种在包括氧化物半导体膜的存储器中包括新颖的刷新电路的半导体器件。 作为在包括氧化物半导体膜，读出放大器电路，锁存电路，第一开关和第二开关的存储器的刷新操作中工作的电路。 在刷新操作中，反映存储在存储器中的电位的电位被输入到读出放大器电路，读出放大器电路的输出被输入到锁存电路，并且锁存电路的输出被再次写入存储器 通过第一开关和在沟道中包括氧化物半导体的第一晶体管。

公开(公告)号：US20150243647A1

公开(公告)日：2015-08-27

申请号：US14636264

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H01L27/02 ,  H01L27/12 ,  H02H9/04

CPC classification number: H01L27/0266 ,  G09G3/3283 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2330/04 ,  G11C19/28 ,  H01L27/1225 ,  H02H9/044 ,  Y10T29/49117 ,  Y10T428/24364 ,  Y10T428/24372 ,  Y10T428/2438

Abstract: Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced.

Abstract translation: 提供了在制造过程中抑制由于ESD导致的半导体元件的损坏的驱动电路，制造驱动电路的方法。 还提供了具有低泄漏电流的保护电路的驱动电路，以及制造该驱动电路的方法。 通过在驱动电路中提供保护电路以电连接到驱动电路中的半导体元件，并且同时形成用作驱动电路中的半导体元件的晶体管和包括在保护中的晶体管 在制造驱动电路的过程中抑制了由于ESD引起的半导体元件的损坏。 此外，通过使用包含在驱动电路中的保护电路中的晶体管的氧化物半导体膜，减小了保护电路中的漏电流。

公开(公告)号：US20150234216A1

公开(公告)日：2015-08-20

申请号：US14703379

申请日：2015-05-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu KONDO ,  Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136286 ,  G02F2001/13606 ,  G02F2001/136295 ,  G02F2202/10 ,  G09G3/3622 ,  G09G2300/0426 ,  H01L27/1225 ,  H01L27/1244 ,  H01L29/45 ,  H01L29/7869

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract translation: 目的在于减少液晶显示装置中包含的信号线的寄生电容。 使用包括氧化物半导体层的晶体管作为设置在每个像素中的晶体管。 注意，氧化物半导体层是通过彻底除去成为电子供体（供体）的杂质（氢，水等）而高度纯化的氧化物半导体层。 因此，当晶体管截止时，泄漏电流（截止电流）的量可以减小。 因此，可以保持施加到液晶元件的电压，而不在每个像素中提供电容器。 此外，可以消除延伸到液晶显示装置的像素部分的电容器布线。 因此，可以消除信号线和电容布线彼此相交的区域中的寄生电容。