公开(公告)号：US09929044B2

公开(公告)日：2018-03-27

申请号：US14597417

申请日：2015-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka

IPC: H01L21/266 ,  H01L21/768 ,  H01L29/66 ,  H01L21/425 ,  H01L21/443 ,  H01L29/786 ,  H01L21/285 ,  H01L29/417 ,  H01L25/065

CPC classification number: H01L21/76892 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/425 ,  H01L21/443 ,  H01L25/0657 ,  H01L29/41733 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with low parasitic capacitance, a semiconductor device with low power consumption, a semiconductor device having favorable frequency characteristics, or a highly integrated semiconductor device. In a method of manufacturing a semiconductor device including a semiconductor, a first conductor, a second conductor, a third conductor, and an insulator, the semiconductor includes a first region in contact with the first conductor, a second region in contact with the second conductor, and a third region in contact with the insulator. The third conductor includes a region in which the third conductor and the semiconductor overlap with each other with the insulator interposed therebetween. The first region, the second region, and the third region do not overlap with each other. The first conductor is selectively grown over the first region, and the second conductor is selectively grown over the second region.

公开(公告)号：US09882059B2

公开(公告)日：2018-01-30

申请号：US14571981

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09831326B2

公开(公告)日：2017-11-28

申请号：US15350213

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Masayuki Sakakura ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Yuhei Sato

IPC: H01L21/02 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

公开(公告)号：US09793295B2

公开(公告)日：2017-10-17

申请号：US15251375

申请日：2016-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US09768320B2

公开(公告)日：2017-09-19

申请号：US15184213

申请日：2016-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L29/26 ,  H01L29/10 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/105 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/78 ,  H01L29/78693 ,  H01L29/78696

Abstract: Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.

公开(公告)号：US09698274B2

公开(公告)日：2017-07-04

申请号：US14883971

申请日：2015-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Naoto Yamade ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.

公开(公告)号：US09666697B2

公开(公告)日：2017-05-30

申请号：US14313145

申请日：2014-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Yasumasa Yamane ,  Takayuki Inoue ,  Shunpei Yamazaki

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78696

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

公开(公告)号：US09660098B2

公开(公告)日：2017-05-23

申请号：US14883732

申请日：2015-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Hideomi Suzawa ,  Suguru Hondo

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78

Abstract: Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.

公开(公告)号：US09653613B2

公开(公告)日：2017-05-16

申请号：US15047940

申请日：2016-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Yuhei Sato ,  Naoki Okuno ,  Motoki Nakashima

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/06

CPC classification number: H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

公开(公告)号：US09647125B2

公开(公告)日：2017-05-09

申请号：US14280625

申请日：2014-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideki Uochi

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/78696

Abstract: A first trench and a second trench are formed in an insulating layer, a transistor including an oxide semiconductor layer in the first trench is formed, and a capacitor is formed along the second trench. A first gate electrode is formed over the first trench, and a second gate electrode is formed under the first trench.