公开(公告)号：US07633027B2

公开(公告)日：2009-12-15

申请号：US12192617

申请日：2008-08-15

申请人： Katsuhisa Sakaguchi ,  Naoki Matsumoto ,  Tsuyoshi Hirabayashi

发明人： Katsuhisa Sakaguchi ,  Naoki Matsumoto ,  Tsuyoshi Hirabayashi

IPC分类号： H01H13/06

CPC分类号： G03B17/08 ,  G03B2217/002 ,  H01H13/06 ,  H01H23/06 ,  H01H23/143 ,  H01H23/164 ,  H01H2001/5888 ,  H01H2221/016 ,  H01H2223/014 ,  H01H2231/044 ,  H01H2231/046

摘要： A switch mechanism usable underwater including a cover serving as an exterior member, a shaft member displaceable in a longitudinal direction and fitted into a shaft hole having substantially the same cross-sectional area provided in the cover, an O-ring maintaining a water-tight sliding seal between the shaft member and the shaft hole, and a lever member movable about an axis for moving the shaft member by application of a pressing force applied to the lever member in a first direction against a force of a bias member, the pressing force being applied at a first point which is a first distance from said axis, the lever member engaging the shaft at a second point a second distance from said axis which is less than said first distance to move the lever member in a second direction opposite said first direction when the pressing force is removed.

摘要翻译： 一种可在水下使用的开关机构，包括用作外部构件的盖，可沿长度方向移位并装配到具有设置在盖中的基本相同的横截面积的轴孔中的轴构件，保持水密性的O形环 轴构件和轴孔之间的滑动密封，以及杆构件，其可绕着轴移动，用于通过施加施加到杠杆构件的抵抗力抵抗偏压构件的力的第一方向上的按压力来移动轴构件，该按压力 被施加在距离所述轴线的第一距离的第一点处，所述杆构件在距离所述轴线的第二距离处的第二点处接合所述轴，所述第二点小于所述第一距离，以沿与所述第一距离相反的第二方向移动所述杆构件 当按压力被去除时的方向。

公开(公告)号：US20090229106A1

公开(公告)日：2009-09-17

申请号：US11989144

申请日：2006-07-19

申请人： Hiroyuki Nikamoto ,  Naoki Matsumoto ,  Toshihiro Higashira ,  Namieki Oosawa ,  Tomonori Funatsu

发明人： Hiroyuki Nikamoto ,  Naoki Matsumoto ,  Toshihiro Higashira ,  Namieki Oosawa ,  Tomonori Funatsu

IPC分类号： B23P17/00

CPC分类号： F16J15/0818 ,  F16J2015/0856 ,  Y10T29/49297 ,  Y10T29/4998

摘要： A process for producing a metallic gasket, which comprises making a thin metallic sheet into a solid figure having an inclined surface, thereby providing a bead region extended upwardly and downwardly over the inclined surface, and forming a sealing part made of a hardened rubber layer on the surface of bead region, characterized by forming a sealing part extended from the apex of the bead region down to an upperward position on the inclined surface, and another sealing part extended from a downward position on the inclined surface down to the flat bottom part, and joining the sealing parts by the rubber material in a solution state extended along the inclined surface from both of the sealing parts, before drying and hardening of the material for making sealing parts. Application of the rubber material in a solution state is carried out preferably by a screen printing process. The rubber sealing parts formed by a silk screen printing process contributes to uniformization of the layer thickness resulting from the drying and hardening.

摘要翻译： 一种金属制垫片的制造方法，其特征在于，将金属薄片制成具有倾斜面的固体图形，从而提供在上述倾斜面上上下延伸的胎圈区域，形成由硬化橡胶层形成的密封部 胎圈区域的表面，其特征在于，形成从胎圈区域的顶点延伸到倾斜表面上的上部的密封部分，以及从倾斜表面上的向下位置延伸到平坦的底部部分的另一个密封部分， 并且在用于制造密封部件的材料的干燥和硬化之前，通过从两个密封部分沿倾斜表面延伸的溶液状态的橡胶材料接合密封部件。 橡胶材料在溶液状态的应用优选通过丝网印刷方法进行。 通过丝网印刷工艺形成的橡胶密封部件有助于由干燥和硬化得到的层厚度均匀化。

公开(公告)号：US07589000B2

公开(公告)日：2009-09-15

申请号：US11643675

申请日：2006-12-22

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

公开(公告)号：US20090029550A1

公开(公告)日：2009-01-29

申请号：US12238449

申请日：2008-09-26

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： H01L21/302

CPC分类号： C30B29/406 ,  C30B33/00

摘要： In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.

摘要翻译： 在通过使用气相沉积在基底杂质底物上形成GaN层然后除去基底而制造的独立的GaN膜中，由于热膨胀系数和晶格常数的层基差异，弓将是大的±40μm至 ±100 mum 由于通过光刻的弓装置制造是具有挑战性的，所以将弓减少至+30μm至-20μm是目标。 将凹面偏转的表面研磨成具有拉伸效果的损伤层，使表面变凸。 通过蚀刻来去除已经变得凸起的表面上的损伤层，这会削弱弓形。 或者，与已经变得凸起的表面相对的一侧的凸表面被研磨以产生受损层。 由于损伤层由于凹面变得凸起，因此适当地蚀刻出损伤层，从而使弓弯曲。

公开(公告)号：US07482490B2

公开(公告)日：2009-01-27

申请号：US10585945

申请日：2005-01-14

申请人： Masakazu Nishiyama ,  Naoki Matsumoto ,  Hisao Eguchi

发明人： Masakazu Nishiyama ,  Naoki Matsumoto ,  Hisao Eguchi

IPC分类号： C07C211/00 ,  C07D285/00 ,  C07D209/00 ,  C07D409/00 ,  C07D233/00

CPC分类号： C07D285/14 ,  C07C211/61 ,  C07D209/56 ,  C07D333/08 ,  C07D409/04 ,  C09B1/00 ,  C09B57/00 ,  C09B57/008 ,  Y10S428/917

摘要： Novel amine compounds that can be utilized as hole transport materials, hole injection materials or the like of organic electroluminescence devices, electrophotographic receptors or the like, and their production processes are provided.The novel amine compound is represented by the following general formula (1).In the formula, R1 and R2 each independently represents hydrogen atom, a linear, branched or cyclic alkyl group or alkoxy group, an aryl group, an aryloxy group or a halogen atom; Ar1 and Ar2 each independently represents a substituted or unsubstituted aryl group or heteroaryl group, and may form a nitrogen-containing heterocyclic ring together with the nitrogen atom bonded thereto; and Ar3 each independently represents a substituted or unsubstituted phenyl group, naphthyl group, biphenylyl group, terphenylyl group, anthryl group, fluorenyl group or pyridyl group (except for amino-substituted groups); and M represents a single bond, an arylene group or a heteroarylene group.

摘要翻译： 提供了可用作有机电致发光器件，电子照相感应器等的空穴传输材料，空穴注入材料等的新型胺化合物及其制备方法。 该新型胺化合物由以下通式（1）表示。 在该式中，R 1和R 2各自独立地表示氢原子，直链，支链或环状的烷基或烷氧基，芳基，芳氧基或卤原子; Ar 1和Ar 2各自独立地表示取代或未取代的芳基或杂芳基，并且可以与与其结合的氮原子一起形成含氮杂环; 和Ar 3各自独立地表示取代或未取代的苯基，萘基，联苯基，三联苯基，蒽基，芴基或吡啶基（氨基取代基除外）。 M表示单键，亚芳基或亚杂亚芳基。

公开(公告)号：US07452814B2

公开(公告)日：2008-11-18

申请号：US11486012

申请日：2006-07-14

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02024 ,  B24B7/228 ,  C30B29/406 ,  C30B33/00

摘要： In a polishing method of a GaN substrate according to this invention, first, while supplying a polishing solution 27 containing abrasives 23 and a lubricant 25, onto a platen 101, the GaN substrate is polished using the platen 101 and the polishing solution 27 (first polishing step). Then the GaN substrate is polished using the platen 101 in which abrasives 29 are buried, while supplying a lubricant 31 onto the platen 101 in which the abrasives 29 are buried (second polishing step).

摘要翻译： 在根据本发明的GaN衬底的抛光方法中，首先在将含有磨料23和润滑剂25的抛光溶液27提供到压板101上的同时，使用压板101和抛光溶液27（第一 抛光步骤）。 然后使用其中埋入磨料29的压板101抛光GaN衬底，同时将润滑剂31供给到其中埋入研磨剂29的压板101（第二抛光步骤）。

公开(公告)号：US07411273B2

公开(公告)日：2008-08-12

申请号：US11744889

申请日：2007-05-07

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： H01L29/06 ,  H01L33/00

CPC分类号： C30B29/406 ,  C30B33/00

摘要： In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.

摘要翻译： 在通过使用气相沉积在基底杂质底物上形成GaN层然后除去基底而制造的独立的GaN膜中，由于热膨胀系数和晶格常数的层基差异，弓将是大的±40μm至 ±100 mum 由于通过光刻的弓装置制造是具有挑战性的，所以将弓减少至+30μm至-20μm是目标。 将凹面偏转的表面研磨成具有拉伸效果的损伤层，使表面变凸。 通过蚀刻来去除已经变得凸起的表面上的损伤层，这会削弱弓形。 或者，与已经变得凸起的表面相对的一侧的凸表面被研磨以产生受损层。 由于损伤层由于凹面变得凸起，因此适当地蚀刻出损伤层，从而使弓弯曲。

公开(公告)号：US20080176400A1

公开(公告)日：2008-07-24

申请号：US12018198

申请日：2008-01-23

申请人： Akihiro Hachigo ,  Naoki Matsumoto ,  Takayuki Nishiura

发明人： Akihiro Hachigo ,  Naoki Matsumoto ,  Takayuki Nishiura

IPC分类号： H01L21/302

CPC分类号： H01L21/02052 ,  C30B29/40 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/30621

摘要： Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step S11), while second bias power lower than the first bias power is applied to the chuck 24.

摘要翻译： 提供能够提高基板PL强度的III-V族化合物半导体基板的制造方法。 在这种III-V族化合物半导体基板的制造方法中，首先对晶片3的表面3a进行研磨（研磨工序）。 其次，清洗晶片3的表面3a（第一清洗步骤S7）。 接下来，在将第一偏置电压施加到用于承载晶片3的卡盘24的同时，对晶片3的表面3a进行第一次干蚀刻，使用含卤素气体。 随后，利用低于第一偏压功率的第二偏置功率施加到卡盘24，对晶片3的表面3a进行第二次干蚀刻，使用含卤素气体（第二干法蚀刻步骤S11） 。

公开(公告)号：US07398055B2

公开(公告)日：2008-07-08

申请号：US10777996

申请日：2004-02-12

申请人： Koji Tajima ,  Naoki Matsumoto ,  Hiroaki Ban ,  Kazuhiro Yamada

发明人： Koji Tajima ,  Naoki Matsumoto ,  Hiroaki Ban ,  Kazuhiro Yamada

IPC分类号： H04B7/00

CPC分类号： G06F17/30905 ,  G01C21/26 ,  G06F17/30896 ,  H04M1/72525 ,  H04M1/7253

摘要： Content according to the present invention includes scripts, each of which is associated with an identifier of an electronic device in which device the script is executed. Upon receipt of the content, an electronic device specifies, using an identifier of the device, a script(s) to be executed in the electronic device and executes only the specified script(s). As a result, an application program suitable for the electronic device is provided to and executed on the electronic device.

摘要翻译： 根据本发明的内容包括脚本，每个脚本与其中执行脚本的设备的电子设备的标识符相关联。 在接收到内容时，电子设备使用设备的标识符来指定要在电子设备中执行的脚本，并且仅执行指定的脚本。 结果，适用于电子设备的应用程序被提供给电子设备并在其上执行。

公开(公告)号：US07357837B2

公开(公告)日：2008-04-15

申请号：US10691540

申请日：2003-10-24

申请人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto

发明人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto

IPC分类号： C30B23/04

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B25/00 ,  C30B29/406 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/0206 ,  H01S5/34333 ,  H01S2304/00 ,  H01S2304/04 ,  Y10S117/902 ,  Y10S438/942

摘要： The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.

摘要翻译： 制造GaN单晶衬底的方法包括掩模层形成步骤，在GaAs衬底2上形成具有彼此分离设置的多个开口窗口10的掩模层8; 以及在掩模层8上生长由GaN制成的外延层12的外延层生长步骤。