公开(公告)号：US20060108595A9

公开(公告)日：2006-05-25

申请号：US10840463

申请日：2004-05-06

申请人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

发明人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/145 ,  H01L24/73 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02P80/30 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

公开(公告)号：US20060063289A1

公开(公告)日：2006-03-23

申请号：US10946587

申请日：2004-09-21

申请人： Gerald Negley ,  Michael Leung

发明人： Gerald Negley ,  Michael Leung

IPC分类号： H01L21/00

CPC分类号： H01L33/501 ,  H01L2933/0041

摘要： Semiconductor light emitting devices are fabricated by placing a suspension including phosphor particles suspended in solvent on at least a portion of a light emitting surface of a semiconductor light emitting element, and evaporating at least some of the solvent to cause the phosphor particles to deposit on at least a portion of the light emitting surface. A coating including phosphor particles is thereby formed on at least a portion of the light emitting surface. Particles other than phosphor also may be coated and solutions wherein particles are dissolved in solvent also may be used.

公开(公告)号：US20060061259A1

公开(公告)日：2006-03-23

申请号：US10947704

申请日：2004-09-23

申请人： Gerald Negley

发明人： Gerald Negley

IPC分类号： H05B33/14 ,  H05B33/10 ,  H05B33/00

CPC分类号： H01L33/501 ,  H01L2224/48463

摘要： Semiconductor light emitting devices include a semiconductor light emitting element having a light emitting surface, and a patternable film including transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film may be a photopatternable film and/or a printable film including transparent silicone and phosphor. The patternable film includes an aperture therein that exposes a portion of a light emitting surface, and a bond pad is provided on the light emitting surface in the aperture. A wire bond may be provided on the bond pad. Related methods of fabricating semiconductor light emitting devices are also provided.

摘要翻译： 半导体发光器件包括具有发光表面的半导体发光元件和在发光表面的至少一部分上的包括透明硅氧烷和磷光体的图案化膜。 可图案的膜可以是可光图案化的膜和/或包括透明硅氧烷和磷光体的可印刷膜。 可图案的膜包括其中露出发光表面的一部分的孔，并且在孔中的发光表面上设置接合焊盘。 可以在接合焊盘上提供引线接合。 还提供了制造半导体发光器件的相关方法。

公开(公告)号：US20050211999A1

公开(公告)日：2005-09-29

申请号：US10811752

申请日：2004-03-29

申请人： Gerald Negley

发明人： Gerald Negley

IPC分类号： H01L21/225 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L33/30 ,  H01L33/32

CPC分类号： H01L21/2258 ,  H01L29/2003 ,  H01L29/207 ,  H01L33/305 ,  H01L33/32

摘要： An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO2layer, and a second SiO2 layer on the Group II metal source composition layer.

摘要翻译： 公开了一种改进的p型氮化镓基半导体器件。 该器件包括具有至少一个p型III族氮化物层的结构，其包括一些镓，p型层上的第一二氧化硅层，第一SiO 2上的第II族金属源组合物层 II族金属源组合物层上的第二SiO 2层和第二SiO 2层。

公开(公告)号：US20050051789A1

公开(公告)日：2005-03-10

申请号：US10659108

申请日：2003-09-09

申请人： Gerald Negley ,  Ban Loh

发明人： Gerald Negley ,  Ban Loh

IPC分类号： H01L33/48 ,  H01L29/22

CPC分类号： H01L33/486 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A mounting substrate for a semiconductor light emitting device includes a solid metal block having a cavity in a face thereof that is configured for mounting a semiconductor light emitting device therein. An insulating coating is provided in the cavity, and first and second spaced apart conductive traces are provided on the insulating coating in the cavity that are configured for connection to a semiconductor light emitting device. The mounting substrate may be fabricated by providing a solid aluminum block including a cavity in a face thereof that is configured for mounting a semiconductor light emitting device therein. The solid aluminum block is oxidized to form an aluminum oxide coating thereon. The first and second spaced apart electrical traces are fabricated on the aluminum oxide coating in the cavity.

摘要翻译： 用于半导体发光器件的安装基板包括其表面上具有用于将半导体发光器件安装在其中的腔体的固体金属块。 绝缘涂层设置在空腔中，并且第一和第二间隔开的导电迹线设置在空腔中的被配置为连接到半导体发光器件的绝缘涂层上。 可以通过提供一种固体铝块来制造安装基板，该固体铝块包括其表面中的腔体，其被构造用于在其中安装半导体发光器件。 将固体铝块氧化，在其上形成氧化铝涂层。 第一和第二间隔开的电迹线在空腔中的氧化铝涂层上制造。

公开(公告)号：US20050029533A1

公开(公告)日：2005-02-10

申请号：US10840463

申请日：2004-05-05

申请人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

发明人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32

CPC分类号： H01L33/145 ,  H01L24/73 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02P80/30 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

公开(公告)号：US20050017256A1

公开(公告)日：2005-01-27

申请号：US10920101

申请日：2004-08-17

申请人： David Slater ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffeto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

发明人： David Slater ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffeto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

IPC分类号： H01L21/60 ,  H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L23/48 ,  H01L21/00

CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

摘要翻译： 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上， 发光器件死到底座。 选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。