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    LED fabrication via ion implant isolation
    1.
    发明申请
    LED fabrication via ion implant isolation 有权

    公开(公告)号：US20050285126A1

    公开(公告)日：2005-12-29

    申请号：US11154619

    申请日：2005-06-16

    申请人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

    发明人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

    IPC分类号： H01L29/22 ,  H01L33/30 ,  H01L33/32

    CPC分类号： H01L33/32 ,  H01L33/305

    摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

    LED fabrication via ion implant isolation
    3.
    发明申请
    LED fabrication via ion implant isolation 有权
    通过离子注入隔离制造LED

    公开(公告)号：US20050029533A1

    公开(公告)日：2005-02-10

    申请号：US10840463

    申请日：2004-05-05

    申请人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

    发明人： Yifeng Wu ,  Gerald Negley ,  David Slater ,  Valeri Tsvetkov ,  Alexander Suvorov

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32

    CPC分类号： H01L33/145 ,  H01L24/73 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02P80/30 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

    摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

    LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING
    4.
    发明申请
    LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 有权
    适用于片芯接合的发光装置

    公开(公告)号：US20070241360A1

    公开(公告)日：2007-10-18

    申请号：US11772419

    申请日：2007-07-02

    申请人： David Slater, Jr. ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffetto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

    发明人： David Slater, Jr. ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffetto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

    摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译： 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上， 发光器件死到底座。 选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications
    6.
    发明申请
    Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications 有权
    强大的III类发光二极管在标准封装应用中具有高可靠性

    公开(公告)号：US20070085104A1

    公开(公告)日：2007-04-19

    申请号：US11539423

    申请日：2006-10-06

    申请人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

    发明人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

    摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

    摘要翻译： 公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。 二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。 接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

    Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same
    9.
    发明申请
    Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same 审中-公开
    半导体发光器件安装基板和包括空腔和盖板的封装以及其封装方法

    公开(公告)号：US20060124953A1

    公开(公告)日：2006-06-15

    申请号：US11011748

    申请日：2004-12-14

    申请人： Gerald Negley ,  David Slater

    发明人： Gerald Negley ,  David Slater

    IPC分类号： H01L33/00

    CPC分类号： H01L33/642 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/52 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes a cavity that is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. One or more semiconductor light emitting devices are mounted in the cavity. A cap having an aperture is configured to matingly attach to the solid metal block adjacent the first metal face such that the aperture is aligned to the cavity. Reflective coatings, conductive traces, insulating layers, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits, optical coupling media, recesses and/or meniscus control regions also may be provided in the package. Related packaging methods also may be provided.

    摘要翻译： 用于半导体发光器件的安装衬底包括具有第一和第二相对金属面的实心金属块。 第一金属面包括被构造成在其中安装至少一个半导体发光器件的空腔，并且将由其中安装的远离腔的至少一个半导体发光器件发射的光反射。 一个或多个半导体发光器件安装在腔中。 具有孔径的盖被配置成与邻近第一金属表面的固体金属块配合地附接，使得孔与空腔对准。 还可以在包装中提供反射涂层，导电迹线，绝缘层，基座，通孔，透镜，柔性膜，光学元件，荧光体，集成电路，光学耦合介质，凹部和/或弯液面控制区域。 也可以提供相关的包装方法。

    Flip-chip bonding of light emitting devices
    10.
    发明申请
    Flip-chip bonding of light emitting devices 有权
    发光器件的倒装键合

    公开(公告)号：US20050017256A1

    公开(公告)日：2005-01-27

    申请号：US10920101

    申请日：2004-08-17

    申请人： David Slater ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffeto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

    发明人： David Slater ,  Jayesh Bharathan ,  John Edmond ,  Mark Raffeto ,  Anwar Mohammed ,  Peter Andrews ,  Gerald Negley

    IPC分类号： H01L21/60 ,  H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L23/48 ,  H01L21/00

    CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

    摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译： 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上， 发光器件死到底座。 选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。