公开(公告)号：US20060234408A1

公开(公告)日：2006-10-19

申请号：US11401329

申请日：2006-04-11

申请人： Jae Lee ,  Yong Kim ,  Hyung Back ,  Moon Kong ,  Dong Kim

发明人： Jae Lee ,  Yong Kim ,  Hyung Back ,  Moon Kong ,  Dong Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/405 ,  H01L2933/0083

摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

摘要翻译： 本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。 该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。 然后，绝缘层被选择性地蚀刻以形成绝缘图案，并且n掺杂的Al x（1-xy） N层，有源层和p掺杂的Al N n N n层（1-mn）N层依次形成在绝缘层 模式。 导电衬底形成在p掺杂的Al（n-n）N层上。 去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂的Al x Ga y y y的暴露表面的一部分上形成n电极， （1-xy）N层。

公开(公告)号：US20060215256A1

公开(公告)日：2006-09-28

申请号：US11443376

申请日：2006-05-31

申请人： Jae Lee ,  Jung Lee ,  Je Kim

发明人： Jae Lee ,  Jung Lee ,  Je Kim

IPC分类号： H01S3/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/12

摘要： A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.

摘要翻译： 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成的具有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。

公开(公告)号：US20060192206A1

公开(公告)日：2006-08-31

申请号：US11150288

申请日：2005-06-13

申请人： Moon Kong ,  Yong Kim ,  Jae Lee ,  Hyung Back

发明人： Moon Kong ,  Yong Kim ,  Jae Lee ,  Hyung Back

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.

摘要翻译： 本文公开了倒装芯片型氮化物半导体发光二极管。 发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层，n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘 型氮化物半导体层，从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物， 或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极，有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。

公开(公告)号：US20060145154A1

公开(公告)日：2006-07-06

申请号：US11289506

申请日：2005-11-30

申请人： Young Choi ,  Hong Yu ,  Ki Cho ,  Jae Lee ,  Bo Jung

发明人： Young Choi ,  Hong Yu ,  Ki Cho ,  Jae Lee ,  Bo Jung

IPC分类号： H01L31/0376

CPC分类号： G02F1/13458 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

摘要翻译： 提供TFT阵列基板。 TFT阵列基板包括：栅极连接到栅极线; 源极连接到与栅极线交叉并限定像素区域的数据线; 面向源电极的漏电极，其间具有通道; 在源电极和漏电极之间形成沟道的半导体层; 像素区域中的像素电极并与漏电极接触; 形成在所述半导体层上的沟道钝化层; 栅极焊盘，其具有从栅极线延伸的栅极焊盘下部电极; 以及具有与数据线分离的数据焊盘下电极的数据焊盘。

公开(公告)号：US20060132410A1

公开(公告)日：2006-06-22

申请号：US11270916

申请日：2005-11-10

申请人： Jae Woo ,  Jae Lee

发明人： Jae Woo ,  Jae Lee

IPC分类号： G09G3/36

CPC分类号： G09G3/3688 ,  G09G2310/027

摘要： An integrated circuit device includes an amplifier circuit that includes first and second differential transistor pairs that are selectively operable responsive to at least one bit of a multi-bit data signal.

摘要翻译： 集成电路器件包括放大器电路，该放大器电路包括响应多位数据信号的至少一位而选择性地操作的第一和第二差分晶体管对。

公开(公告)号：US20060103577A1

公开(公告)日：2006-05-18

申请号：US11092187

申请日：2005-03-29

申请人： Jae Lee

发明人： Jae Lee

IPC分类号： H01Q1/38

CPC分类号： H01Q9/40 ,  H01Q5/364

摘要： The present invention relates to an ultra wideband internal antenna, which is provided in a mobile communication terminal to cut off frequencies in a certain frequency band while processing ultra wideband signals. The ultra wideband internal antenna includes a first radiation part, a second radiation part, a feeding part and a ground part. The first radiation part is made of a metal plate on a top surface of a dielectric substrate and is provided with at least one cut part, formed by cutting out a lower corner portion thereof, and an internal slot. The second radiation part is formed in the slot of the first radiation part while being connected to the first radiation part, the second radiation part being conductive. In this case, the first and second radiation parts form an ultra wide band due to electromagnetic coupling therebetween using individual currents flowing into the first and second radiation parts.

公开(公告)号：US20060097228A1

公开(公告)日：2006-05-11

申请号：US11271099

申请日：2005-11-10

申请人： Jae Lee ,  Chang Lee ,  Hyeon Lee ,  Jung In ,  Man Han

发明人： Jae Lee ,  Chang Lee ,  Hyeon Lee ,  Jung In ,  Man Han

IPC分类号： C09K11/08 ,  B01J19/00

CPC分类号： B01J19/2415 ,  B01J3/008 ,  B01J2219/00159 ,  Y02P20/544

摘要： The present invention relates to a method of continuously producing a phosphor at a supercritical water (SCW) condition and an apparatus used in the method. A phosphor produced according to the method of the present invention has similar luminosity to a phosphor produced according to a conventional solid-state method and the size and shape of particles thereof is also uniform. Accordingly, a phosphor according to the method of the present invention is applicable in various fields such as plasma display (PDP) and field emission display (FED). Also, in the method of producing a phosphor according to the present invention, the total reaction time is within about one minute, which is shorter than in the solid-state method. Also, since a separate heat processing process is not needed to obtain crystallized particles, it is efficient in aspects of time and energy.

摘要翻译： 本发明涉及在超临界水（SCW）条件下连续生产荧光体的方法和该方法中使用的装置。 根据本发明的方法制造的荧光体具有与根据常规固态方法制造的荧光体相似的亮度，并且其颗粒的尺寸和形状也是均匀的。 因此，根据本发明的方法的荧光体可应用于等离子体显示（PDP）和场发射显示（FED）等各种领域。 此外，在本发明的荧光体的制造方法中，总反应时间在比固态方法短的约1分钟内。 此外，由于不需要单独的热处理工艺来获得结晶颗粒，因此在时间和能量方面是有效的。

公开(公告)号：US20060071888A1

公开(公告)日：2006-04-06

申请号：US11213320

申请日：2005-08-26

申请人： Jae Lee ,  Yang Kim

发明人： Jae Lee ,  Yang Kim

IPC分类号： G09G3/32

CPC分类号： G09G3/3266 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/043 ,  G09G2330/045 ,  G09G2360/16

摘要： A light emitting display and a driving method thereof. The light emitting display includes an image displaying part including a plurality of pixels electrically connected to a plurality of scan lines, a plurality of data lines, and a plurality of emission control lines. A controller generates a start signal having a pulse width corresponding to a number of ‘1s’ or ‘0s’ of video data. A data driver converts the video data into a data signal to supply the data signal to the data lines. A scan driver supplies a scan signal to the scan lines, and an emission control signal supplier generates an emission control signal for controlling an emitting period of at least one of the pixels in response to a start signal supplied from the controller and supplies the emission control signal to the emission control lines.

公开(公告)号：US20060065929A1

公开(公告)日：2006-03-30

申请号：US11095073

申请日：2005-03-31

申请人： Jae Lee ,  Jung Lee

发明人： Jae Lee ,  Jung Lee

IPC分类号： H01L27/12

CPC分类号： H03H9/0542 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/7787 ,  H03H3/08

摘要： Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.

摘要翻译： 提供了一种其中SAW滤波器和HFET集成在单个基板上的氮化物基半导体器件及其制造方法。 氮化物类半导体器件包括形成在衬底上的半绝缘GaN层，形成在半绝缘GaN层的一侧上的用于SAW滤波器的多个电极，形成在半绝缘GaN层的另一侧上的Al掺杂GaN层 半绝缘GaN层，形成在Al掺杂GaN层上的AlGaN层和在AlGaN层上形成的多个用于HFET的电极。 半绝缘GaN层的两侧具有相同的表面水平。

公开(公告)号：US20060055999A1

公开(公告)日：2006-03-16

申请号：US11171146

申请日：2005-06-29

申请人： Sung Bae ,  Jae Lee ,  Kyung Kim ,  Joon Lee

发明人： Sung Bae ,  Jae Lee ,  Kyung Kim ,  Joon Lee

IPC分类号： G02F1/03

CPC分类号： H01L27/3246 ,  H01L27/3211 ,  H01L27/3251 ,  H01L51/56

摘要： An organic electro luminescence device is presented in which ink forming an organic electro luminescent layer is prevented from overflowing edges of a pixel region. The organic electro luminescent device includes first and second substrates and sub-pixels in the first and second substrates. An array element includes a thin film transistor formed on the first substrate in each sub-pixel. A first electrode is formed at an inner surface of the second substrate. A buffer is formed at an outer region to partition each sub-pixel formed on the first electrode. A first electrode separator is formed on the buffer and a second electrode separator is formed in a region including a stepped portion of the buffer. An organic electro luminescent layer is formed within a region partitioned by the second electrode separator. A second electrode is formed on the second substrate where the organic electro luminescent layer is formed.

摘要翻译： 提出了一种有机电致发光器件，其中防止形成有机电致发光层的墨水溢出像素区域的边缘。 有机电致发光器件包括第一和第二衬底中的第一和第二衬底和子像素。 阵列元件包括形成在每个子像素中的第一衬底上的薄膜晶体管。 第一电极形成在第二基板的内表面。 在外部区域形成缓冲器，以分隔形成在第一电极上的每个子像素。 在缓冲器上形成第一电极分离器，并且在包括缓冲器的阶梯部分的区域中形成第二电极分离器。 在由第二电极隔膜分隔的区域内形成有机电致发光层。 第二电极形成在形成有机电致发光层的第二基板上。