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268 条记录 (耗时 0.05 秒)

    MOS gate type semiconductor device
    92.
    发明授权
    MOS gate type semiconductor device 失效
    MOS栅型半导体器件

    公开(公告)号：US5635736A

    公开(公告)日：1997-06-03

    申请号：US527729

    申请日：1995-09-13

    申请人： Hideyuki Funaki ,  Yoshihiro Yamaguchi

    发明人： Hideyuki Funaki ,  Yoshihiro Yamaguchi

    IPC分类号： H01L23/482 ,  H01L27/08 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786 ,  H01L27/10

    CPC分类号： H01L27/0802 ,  H01L23/4824 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2924/0002

    摘要： A MOS gate type semiconductor device, comprising an upper source wiring consisting of a plurality of upper source electrodes, an upper drain wiring provided on a semiconductor substrate and consisting of a plurality of upper drain electrodes formed in a comb-like arrangement such that the plurality of upper drain electrodes are engaged with the upper source electrodes, lower source electrodes provided at each of lower portions of adjacent pairs of the upper source electrodes and the upper drain electrodes such that the lower source electrodes are layered below the upper source electrodes and the upper drain electrodes, and lower drain electrodes provided at each of lower portions of adjacent pairs of the upper source electrodes and the upper drain electrodes electrode such that the lower drain electrodes are layered below the upper source electrodes and the upper drain electrodes, wherein the lower source electrodes are connected to the upper source electrodes and the source region, and are disposed so as to form a wave-like shape, and the lower drain electrodes are connected to the upper drain electrodes and the drain region, and are disposed so as to form a wave-like shape.

    摘要翻译： 一种MOS栅型半导体器件，包括由多个上源电极组成的上源极布线，设置在半导体衬底上的上漏极布线，并且由形成为梳状布置的多个上漏电极组成， 上部漏电极与上部源电极接合，设置在相邻成对的上部源电极和上部漏电极的下部的下部源电极，使得下部源电极层叠在上部源电极和上部 漏极电极和下漏电极，其设置在相邻成对的上源电极和上漏电极电极的下部，使得下漏电极层叠在上源电极和上漏电极的下方，其中下源 电极连接到上源电极和源区，a d被配置成波形形状，下部漏极连接到上部漏电极和漏极区域，并且被配置为形成波浪形状。

    Plasma arc torch
    93.
    发明授权
    Plasma arc torch 失效
    等离子弧焊炬

    公开(公告)号：US5628924A

    公开(公告)日：1997-05-13

    申请号：US507461

    申请日：1995-08-24

    申请人： Toshio Yoshimitsu ,  Hitoshi Sato ,  Noriyuki Sekizawa ,  Yoshihiro Yamaguchi ,  Yoshitaka Niigaki ,  Yuuichi Takabayashi

    发明人： Toshio Yoshimitsu ,  Hitoshi Sato ,  Noriyuki Sekizawa ,  Yoshihiro Yamaguchi ,  Yoshitaka Niigaki ,  Yuuichi Takabayashi

    IPC分类号： B23K10/00 ,  H05H1/32 ,  H05H1/34

    CPC分类号： H05H1/34 ,  H05H2001/3426 ,  H05H2001/3436 ,  H05H2001/3442 ,  H05H2001/3457 ,  H05H2001/3478

    摘要： A plasma arc torch is provided which has a very long electrode lifetime, even if the number of times that an arc is generated and stopped is great. Improper electric discharge can be effectively prevented, and the lifetime can be increased due to the excellent resistance to heat. For this purpose, a metallic layer is provided in the portion where a pilot arc is generated, and the metallic layer contains at least one metal selected from the group consisting of gold and silver. The metallic layer is provided on the surface of the electrode holder, or on both of a surface of the electrode holder and a surface of the nozzle. Further, at least one of the electrode holder and the nozzle can be formed of aluminum or an aluminum alloy, and after the formation, an anodic oxide film can be formed on the surface thereof.

    摘要翻译： PCT No.PCT / JP94 / 00270 Sec。 371日期1995年8月24日 102（e）日期1995年8月24日PCT 1994年2月23日PCT PCT。 公开号WO94 / 19137 日期1994年9月1日提供了等离子弧焊炬，其具有非常长的电极寿命，即使产生和停止电弧的次数也很大。 可以有效地防止不当的放电，并且由于优异的耐热性而可以提高寿命。 为此，在产生导电弧的部分中设置有金属层，金属层含有选自金和银中的至少一种金属。 金属层设置在电极保持器的表面上，或者设置在电极保持器的表面和喷嘴的表面上。 此外，电极保持器和喷嘴中的至少一个可以由铝或铝合金形成，并且在形成之后，可以在其表面上形成阳极氧化膜。

    Plasma arc cutting machine with variable constant current source and variable resistor
    94.
    发明授权
    Plasma arc cutting machine with variable constant current source and variable resistor 失效
    等离子电弧切割机，具有可变恒流源和可变电阻

    公开(公告)号：US5506384A

    公开(公告)日：1996-04-09

    申请号：US380955

    申请日：1995-01-31

    申请人： Yoshihiro Yamaguchi

    发明人： Yoshihiro Yamaguchi

    IPC分类号： B23K10/00

    CPC分类号： B23K10/006

    摘要： A first stop valve (4) is connected in parallel with a serially connected second stop valve (7) and a gas flow regulating means (6) between a supply of working gas and a plasma torch (1). In response to a start signal S.sub.T, the second stop valve (7) is opened so as to supply the working gas at a small flow rate Q.sub.P to the plasma torch (1) via the gas flow regulating means (6). After a pilot arc is started, the first stop valve (4) is gradually opened so as to gradually increase the flow rate of the working gas from the small flow rate Q.sub.P up to a normal flow rate Q.sub.M, and at the same time, the pilot current is gradually increased from an initial pilot current level I.sub.S to a pilot current level I.sub.P, corresponding to the gradual increase in the flow rate of the working gas up to the normal flow rate Q.sub.M. In response to a stop signal S.sub.P, the arc current is gradually reduced from the cutting current level I.sub.M to a lower level I.sub.D at which the main arc (13) is extinguished. A resistor (12a,12b) is connected in a current path between a constant current source (8) and the plasma nozzle (1a), with the current source (8) having a plurality of switchable current levels and the resistor (12a,12b) having a corresponding plurality of resistance levels, whereby the nozzle-workpiece voltage can be maintained substantially constant.

    摘要翻译： 第一截止阀（4）与串联连接的第二截止阀（7）和气体流量调节装置（6）并联连接在工作气体和等离子体焰炬（1）之间。 响应于启动信号ST，第二截止阀（7）打开，以便通过气流调节装置（6）将小流量QP的工作气体供应到等离子体焰炬（1）。 在开始引弧之后，第一截止阀（4）逐渐打开，从而将工作气体的流量从小流量QP逐渐增加到正常流量QM，同时， 引导电流从初始引导电流电平IS逐渐增加到引导电流电平IP，对应于工作气体的流量逐渐增加直到正常流量QM。 响应于停止信号SP，电弧电流从切割电流电平IM逐渐减小到主电弧（13）熄灭的较低电平ID。 电流源（12a，12b）在恒定电流源（8）和等离子体喷嘴（1a）之间的电流通路中连接，电流源（8）具有多个可切换电流电平，电阻器（12a，12b） ）具有相应的多个电阻水平，由此喷嘴 - 工件电压可以保持基本恒定。

    Construction of nozzle for plasma cutting torch
    96.
    发明授权
    Construction of nozzle for plasma cutting torch 失效
    等离子切割炬喷嘴的构造

    公开(公告)号：US5140130A

    公开(公告)日：1992-08-18

    申请号：US622744

    申请日：1990-12-05

    申请人： Shun-ichi Sakuragi ,  Yoshihiro Yamaguchi

    发明人： Shun-ichi Sakuragi ,  Yoshihiro Yamaguchi

    IPC分类号： H05H1/34

    CPC分类号： H05H1/34 ,  H05H2001/3478

    摘要： A plasma cutting torch comprising: a gas current generator having at least one orifice which is formed in a working gas passage defined between the outer peripheral surface of an electrode and the inner peripheral surface of a nozzle disposed so as to surround the electrode and which extends substantially in parallel relationship with the longitudinal axis of said electrode, wherein in case the restricted area of the orifice of the gas current generator is expressed by S5 and the restricted area of a nozzle orifice of the nozzle is expressed by S4, the relation between the two is expressed by S5.gtoreq.S4. The plasma cutting torch is further provided with a generally cylindrical space portion formed on the upstream side of the nozzle orifice defined in the leading end portion of the nozzle and having a diameter larger than the diameter of the nozzle orifice.

    摘要翻译： 一种等离子切割手电筒，包括：气体电流发生器，具有至少一个孔口，该孔口形成在电极的外周面和喷嘴的内周面之间形成的工作气体通道中，所述喷嘴的内周面设置为围绕电极并延伸 基本上与所述电极的纵向轴线平行，其中在气体发生器的孔的限制区域由S5表示并且喷嘴的喷嘴孔的限制区域由S4表示的情况下， 两个由S5> / = S4表示。 等离子切割割炬还设置有形成在喷嘴孔的上游侧的大致圆柱形的空间部分，其限定在喷嘴的前端部分中，并且具有大于喷嘴孔直径的直径。

    Conductivity-modulation metal oxide semiconductor field effect transistor
    97.
    发明授权
    Conductivity-modulation metal oxide semiconductor field effect transistor 失效
    电导率调制金属氧化物半导体场效应晶体管

    公开(公告)号：US5124773A

    公开(公告)日：1992-06-23

    申请号：US563720

    申请日：1990-08-07

    申请人： Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Kiminori Watanabe

    发明人： Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Kiminori Watanabe

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/745

    CPC分类号： H01L29/405 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7455

    摘要： A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the N base. A source electrode electrically conducts the P base and the source. A first gate electrode insulatively covers a channel region defined by the N.sup.+ source layer in the P base. A P drain layer is formed on an opposite substrate surface. An N.sup.+ second source layer is formed in a P type drain layer by diffusion to define a second channel region. A second gate electrode insulatively covers the second channel region, thus providing a voltage-controlled turn-off controlling transistor. A drain electrode of the MOSFET conducts the P type drain and second source. When the turn-off controlling transistor is rendered conductive to turn off the MOSFET a "shorted anode structure" is temporarily formed wherein the N type base is short-circuited to the drain electrode, whereby case, the flow of carriers accumulated in the N type base into the drain electrode is facilitated to accelerate dispersion of carriers upon turn-off of the transistor.

    摘要翻译： 导电调制型MOSFET采用N型导电性基板作为N基极。 在形成在N基底中的P基底层中形成重掺杂N型导电性的第一源极层。 源极电极导电P基极和源极。 第一栅极绝缘地覆盖由P基底中的N +源层限定的沟道区域。 在相对的基板表面上形成P漏极层。 通过扩散在P型漏极层中形成N +第二源极层，以限定第二沟道区。 第二栅电极绝缘地覆盖第二沟道区，从而提供电压控制关断控制晶体管。 MOSFET的漏电极导通P型漏极和第二源极。 当关断控制晶体管导通以关断MOSFET时，暂时形成“短路阳极结构”，其中N型基极短路到漏极，由此情况下，累积在N型的载流子 有助于在晶体管截止时加速载流子的分散。

    Conductivity-modulation metal oxide field effect transistor with single gate structure
    98.
    发明授权
    Conductivity-modulation metal oxide field effect transistor with single gate structure 失效
    具有单栅极结构的电导率调制金属氧化物场效应晶体管

    公开(公告)号：US5105243A

    公开(公告)日：1992-04-14

    申请号：US399342

    申请日：1989-08-25

    申请人： Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Kiminori Watanabe

    发明人： Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Kiminori Watanabe

    IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739

    CPC分类号： H01L29/7396 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/405 ,  H01L29/7393 ,  H01L29/7395

    摘要： There is disclosed a single-gate type conductivity-modulation field effect transistor having a first base layer, a second base layer, and a source layer formed in the second base layer. A source electrode is provided on a surface of the first base layer, for electrically shorting the second base layer with the source layer. A drain layer is provided in the first base layer surface. A drain electrode is formed on the layer surface to be in contact with the drain layer. A gate electrode is insulatively provided above the layer surface, for covering a certain surface portion of the second base layer which is positioned between the first base layer and the source layer to define a channel region below the gate electrode. A heavily-doped semiconductor layer is formed in the drain layer to have the opposite conductivity type to that of the drain layer. This semiconductor layer is in contact with the drain electrode. When the transistor is turned off, this layer facilitates carriers accumulated in the first base layer to flow into the drain electrode through the drain layer, thereby accelerating dispersion of the carriers in said transistor.

    摘要翻译： 公开了具有形成在第二基极层中的第一基极层，第二基极层和源极层的单栅极型导电调制场效应晶体管。 源极电极设置在第一基极层的表面上，用于使第二基极层与源极层电气短路。 在第一基层表面设置漏极层。 漏极电极形成在层表面上以与漏极层接触。 栅极电极被绝缘地设置在层表面之上，用于覆盖位于第一基极层和源极层之间的第二基极层的特定表面部分，以限定栅电极下方的沟道区。 在漏极层中形成重掺杂的半导体层，以具有与漏极层相反的导电类型。 该半导体层与漏电极接触。 当晶体管截止时，该层便于积聚在第一基极层中的载流子通过漏极层流入漏电极，从而加速载流子在所述晶体管中的分散。

    Lateral conductivity modulated MOSFET
    100.
    发明授权
    Lateral conductivity modulated MOSFET 失效
    横向电导调制MOSFET

    公开(公告)号：US5068700A

    公开(公告)日：1991-11-26

    申请号：US622351

    申请日：1990-11-29

    申请人： Yoshihiro Yamaguchi ,  Kiminori Watanabe ,  Akio Nakagawa

    发明人： Yoshihiro Yamaguchi ,  Kiminori Watanabe ,  Akio Nakagawa

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/739

    CPC分类号： H01L29/7394 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/7393

    摘要： A lateral conductivity modulated MOSFET comprises a semiconductor wafer, a first-conductivity type base layer selectively formed in a surface region of the semiconductor wafer, a second-conductivity type source layer selectively formed in a surface region of the first-conductivity type base layer, a second-conductivity type base layer selectively formed in the semiconductor wafer, a first-conductivity type drain layer formed in a surface region of the second-conductivity type base layer, a gate insulation film formed on that surface portion of the first-conductivity type base layer which is sandwiched between the source layer and the second-conductivity type base layer, a gate electrode formed on the gate insulation film, a source electrode in contact with both the source layer and the first-conductivity type base layer, and a drain electrode in contact with the drain layer. A second-conductivity type cathode layer is formed in a surface region of the semiconductor wafer in such a manner that it is located adjacent to the second-conductivity type base layer. A cathode electrode is in contact with the cathode layer and is kept at the same potential level as that of the drain electrode.