摘要:
A plasma cutting torch comprising: a gas current generator having at least one orifice which is formed in a working gas passage defined between the outer peripheral surface of an electrode and the inner peripheral surface of a nozzle disposed so as to surround the electrode and which extends substantially in parallel relationship with the longitudinal axis of said electrode, wherein in case the restricted area of the orifice of the gas current generator is expressed by S5 and the restricted area of a nozzle orifice of the nozzle is expressed by S4, the relation between the two is expressed by S5.gtoreq.S4. The plasma cutting torch is further provided with a generally cylindrical space portion formed on the upstream side of the nozzle orifice defined in the leading end portion of the nozzle and having a diameter larger than the diameter of the nozzle orifice.
摘要:
A semiconductor device includes a substrate having a conductor; a semiconductor chip disposed on the substrate and electrically connected to the conductor; a tubular electrode having one end electrically connected to the conductor; and a sealing resin sealing the substrate, the semiconductor chip and the electrode. The electrode is configured to be extendable and contractible in the stacking direction in which the substrate and the semiconductor chip are stacked in the state before sealing of the sealing resin. The edge of the other end of the electrode is exposed from the sealing resin. The electrode has a hollow space opened at the edge of the other end. Therefore, a semiconductor device reduced in size and a method of manufacturing this semiconductor device can be provided.
摘要:
An information processing apparatus that executes information display processing is disclosed. The apparatus includes: a display unit that executes information display; and a data processing unit that executes a control of the information display of the display unit and data processing based on a user input. The data processing unit displays an image browsing screen, which corresponds to image data stored in a storage unit, on the display unit and executes display of a map at the position, which corresponds to position information included in attribute information of a selected image, on the basis of a user's input of image selection information and map display request.
摘要:
A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.
摘要:
A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.
摘要:
There is provided a tandem-type dye-sensitized solar cell having a novel structure whereby optical absorption efficiency is improved and which can be manufactured at low cost.A dye-sensitized solar cell 10 comprises an anode substrate 12, a first dye-carrying porous oxide semiconductor layer 14, an electrolytic solution layer 16a, a porous support layer 18, a second dye-carrying porous oxide semiconductor layer 20, an electrolytic solution layer 16b, and a cathode substrate 22, arranged in order from an optical incidence side. The porous support layer 18 supports an iodine redox catalyst layer 19. Electrons derived by a conductor from a conductor layer 12b are introduced to the cathode substrate 22, thereby configuring, for example, a battery circuit for lighting purposes.
摘要:
An image forming apparatus for forming an image on a sheet including: a housing; a cassette detachably accommodated in the housing and configured to store the sheet; a feeding unit configured to feed the sheet; and an image forming unit configured to form the image on the sheet fed by the feeding unit, wherein the cassette includes: a first wall along the trailing edge, a second wall along the leading edge, a first bottom plate extending from the first wall toward the second wall, a second bottom plate extending from the second wall toward the first wall, and a connecting member configured to set a first state where the first and second bottom plates are connected and a second state where the first and second bottom plates are disconnected, and the first and second bottom plates in the second state are independently withdrawable from the housing.
摘要:
For collecting fine particles from fume generated in the process of thermal cutting or welding of a metal material and solidifying them, a fume disposal system comprises a fume introducing chamber 25 which is connected to a cutting machine body through a suction duct 2 and into which suctioned fume is introduced; a bug filter 24 for separating and collecting fine particles from the fume introduced into the fume introducing chamber 25; a hopper 22 for storing the separated, collected fine particles; a screw conveyor for conveying the fine particles stored in the hopper 22 to a molding chamber; and a pressurizing device 38 for pressurizing the fine particles fed into the molding chamber to reduce the volume thereof.
摘要:
An image processing system may include an imaging device for capturing an image and an image processing apparatus for processing the image. The imaging device may include an imaging unit for capturing the image, a first recording unit for recording information relating to the image, the information being associated with the image, and a first transmission control unit for controlling transmission of the image to the image processing apparatus. The image processing apparatus may include a reception control unit for controlling reception of the image transmitted from the imaging device, a feature extracting unit for extracting a feature of the received image, a second recording unit for recording the feature, extracted from the image, the feature being associated with the image, and a second transmission control unit for controlling transmission of the feature to the imaging device.
摘要:
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion.