公开(公告)号：US5911301A

公开(公告)日：1999-06-15

申请号：US799608

申请日：1997-02-12

申请人： Mitsuharu Ozawa ,  Tomohiko Yamamoto ,  Takayuki Matsusima ,  Masahiro Takita

发明人： Mitsuharu Ozawa ,  Tomohiko Yamamoto ,  Takayuki Matsusima ,  Masahiro Takita

IPC分类号： B23P19/08 ,  B65G47/00

CPC分类号： B23P19/086 ,  B23P19/084

摘要： In a constant-velocity-joint-assembly positioning system, a first boot positioning apparatus includes a clamping mechanism for clamping a central drive shaft of a constant velocity joint assembly, a right boot positioning mechanism for positioning a right boot of the joint assembly and a left boot positioning mechanism for positioning a left boot of the joint assembly. The boot positioning apparatus variably sets distances, from the left boot positioning mechanism, of the clamping mechanism and right boot positioning mechanism. A transfer-pallet-position adjusting apparatus includes an adjusting mechanism by which positions of first and second joint-assembly gripping mechanisms are adjusted in accordance with differences between current and target positions of the gripping mechanisms. A vertical position setting apparatus includes a plurality of stopper pieces, provided in correspondence with various possible types of constant velocity joint assembly, so as to allow an upper end of each joint assembly to be set to a uniform vertical position. A loader apparatus includes first and second loader gripping mechanisms mounted on a pivotable arm for gripping the constant velocity joint assembly, and a moving mechanism for moving the first and second loader gripping mechanisms by means of a servo motor and feed screws depending on a type of the joint assembly. Further, a second boot positioning apparatus includes two upper claws and two lower claws which are movable to grip therebetween any desired one of shafts having various different diameters.

摘要翻译： 在等速关节组件定位系统中，第一引导定位装置包括用于夹紧等速万向节组件的中心驱动轴的夹紧机构，用于定位接头组件的右托架的右靴定位机构和 左引导定位机构用于定位关节组件的左引导件。 引导定位装置可变地设置从左引导定位机构到夹紧机构和右引导定位机构的距离。 传送托盘位置调节装置包括调节机构，根据夹持机构的当前位置和目标位置之间的差异来调节第一和第二关节组件夹持机构的位置。 垂直位置设定装置包括与各种各样的等速接头组件相对应地设置的多个止动件，以便允许每个接头组件的上端被设定为均匀的垂直位置。 装载机装置包括安装在可枢转的臂上用于夹紧等速万向节组件的第一和第二装载机夹紧机构，以及用于通过伺服电动机和进给螺杆移动第一和第二装载机夹持机构的移动机构， 联合组装。 此外，第二引导定位装置包括两个上爪和两个下爪，它们可移动以夹持其间具有各种不同直径的所需的一个轴。

公开(公告)号：US5672251A

公开(公告)日：1997-09-30

申请号：US408976

申请日：1995-03-23

申请人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

发明人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

IPC分类号： C23C14/02 ,  G02F1/1362 ,  H01L21/28 ,  H01L21/336 ,  H01L21/48 ,  H01L23/14 ,  H01L29/49 ,  H01L29/786 ,  C23C14/34 ,  C23C14/48 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L29/66765 ,  C23C14/022 ,  G02F1/136286 ,  H01L21/28008 ,  H01L21/4846 ,  H01L23/14 ,  H01L29/4908 ,  H01L29/78603 ,  H01L2924/0002

摘要： The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.

摘要翻译： 本发明的金属线路板的制造方法包括以下步骤：在基板的表面上注入氮气; 通过溅射法形成金属膜，该金属膜包括通过溅射法在其上注入氮的衬底的表面上的Ta和Nb中的一个作为主要成分，通过图案化金属膜形成金属布线; 以及通过金属布线的表面的阳极氧化形成绝缘膜。 在基板或包括氮的保护层上形成金属配线形式的Ta或Nb的步骤中，对金属布线的表面进行阳极氧化，Ta离子或Nb离子不会进入基板。 此外，衬底或保护层掺杂有氮，并且通过其上的溅射方法形成Ta层。 溅射法具有将包含在基板中的材料混合到在涂层的初始阶段形成的膜的特征。 因此，掺杂氮气进入Ta膜，在基板或保护膜上形成薄的α-Ta层。 要外延生长的Ta层是不含杂质的α-Ta层。 因此，得到电阻率约为25微米欧米伽厘米的Ta层。

公开(公告)号：US5518936A

公开(公告)日：1996-05-21

申请号：US403125

申请日：1995-03-13

申请人： Tomohiko Yamamoto ,  Yasunori Shimada ,  Hiroshi Morimoto

发明人： Tomohiko Yamamoto ,  Yasunori Shimada ,  Hiroshi Morimoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1365 ,  G02F1/1368 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L45/00 ,  H01L49/02 ,  H05K1/03 ,  H05K3/38

CPC分类号： H01L29/66765 ,  H01L21/28008 ,  H01L21/31683 ,  H01L29/4908 ,  H01L45/00 ,  G02F2001/136295

摘要： A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.

摘要翻译： 公开了一种在绝缘基板上制造金属布线的方法。 该方法包括以下步骤：在绝缘基板的预定位置上形成预定形状的金属布线层，金属布线层由能被氧化的金属制成; 用杂质元素注入金属布线层; 以及通过在注入杂质元素之后氧化金属布线层的表面而形成绝缘层。

公开(公告)号：US5474941A

公开(公告)日：1995-12-12

申请号：US154116

申请日：1993-11-18

申请人： Yasuhiro Mitani ,  Hirohisa Tanaka ,  Hirosshi Morimoto ,  Tomohiko Yamamoto

发明人： Yasuhiro Mitani ,  Hirohisa Tanaka ,  Hirosshi Morimoto ,  Tomohiko Yamamoto

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675

摘要： A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

摘要翻译： 一种使用在栅绝缘层覆盖的绝缘基板上具有栅电极的薄膜晶体管制造有源矩阵基板的方法，栅极绝缘层上的半导体层，半导体层上的沟道保护层，具有 通过插入栅极绝缘层，半导体层和沟道保护层覆盖栅电极的部分，以及具有覆盖栅电极的部分的源电极，插入栅极绝缘层，该方法增强晶体管特性 的有源矩阵基板，具有最小的泄漏和去除由电子和空穴的存在产生的截止电流。

公开(公告)号：US5434363A

公开(公告)日：1995-07-18

申请号：US086708

申请日：1993-07-07

申请人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

发明人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

IPC分类号： G02F1/13 ,  C23C14/02 ,  C23C14/18 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/48 ,  H01L23/15 ,  H01L29/49 ,  H01L29/786 ,  H05K1/09

CPC分类号： G02F1/13439 ,  C23C14/022 ,  G02F1/136286 ,  H01L21/4846 ,  H01L23/15 ,  H01L29/4908 ,  H01L29/78603 ,  G02F1/1362 ,  H01L2924/0002

摘要： A metallic wiring board includes nitrogen implanted in a surface of a substrate or a protective layer including nitrogen formed on the substrate upon which is formed a metallic film including, as a main component, one of Ta and Nb. An insulating film covering the metallic wiring is formed by anodic oxidation. The nitrogen in the substrate or the protective layer prevents Ta (or Nb) ions from entering the substrate during the anodic oxidation of the metallic wiring. As a result, insulating properties of the substrate are not degraded during the oxidation.

摘要翻译： 金属布线板包括注入到基板表面的氮或包含形成在基板上的氮的保护层，在该基板上形成有作为主要成分的Ta和Nb之一的金属膜。 通过阳极氧化形成覆盖金属布线的绝缘膜。 在金属布线的阳极氧化期间，衬底或保护层中的氮防止了Ta（或Nb）离子进入衬底。 结果，在氧化过程中，基板的绝缘性不会降低。

公开(公告)号：US5286659A

公开(公告)日：1994-02-15

申请号：US813385

申请日：1991-12-26

申请人： Yasuhiro Mitani ,  Katsumara Ikubo ,  Yasunori Shimada ,  Hirohisa Tanaka ,  Hiroshi Morimoto ,  Yutaka Nishi ,  Tomohiko Yamamoto ,  Kenichi Nishimura

发明人： Yasuhiro Mitani ,  Katsumara Ikubo ,  Yasunori Shimada ,  Hirohisa Tanaka ,  Hiroshi Morimoto ,  Yutaka Nishi ,  Tomohiko Yamamoto ,  Kenichi Nishimura

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675

摘要： A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

摘要翻译： 一种使用在栅绝缘层覆盖的绝缘基板上具有栅电极的薄膜晶体管制造有源矩阵基板的方法，栅极绝缘层上的半导体层，半导体层上的沟道保护层，具有 通过插入栅极绝缘层，半导体层和沟道保护层覆盖栅电极的部分，以及具有覆盖栅电极的部分的源电极，插入栅极绝缘层，该方法增强晶体管特性 的有源矩阵基板，具有最小的泄漏和去除由电子和空穴的存在产生的截止电流。