公开(公告)号：US5286659A

公开(公告)日：1994-02-15

申请号：US813385

申请日：1991-12-26

申请人： Yasuhiro Mitani ,  Katsumara Ikubo ,  Yasunori Shimada ,  Hirohisa Tanaka ,  Hiroshi Morimoto ,  Yutaka Nishi ,  Tomohiko Yamamoto ,  Kenichi Nishimura

发明人： Yasuhiro Mitani ,  Katsumara Ikubo ,  Yasunori Shimada ,  Hirohisa Tanaka ,  Hiroshi Morimoto ,  Yutaka Nishi ,  Tomohiko Yamamoto ,  Kenichi Nishimura

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675

摘要： A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

摘要翻译： 一种使用在栅绝缘层覆盖的绝缘基板上具有栅电极的薄膜晶体管制造有源矩阵基板的方法，栅极绝缘层上的半导体层，半导体层上的沟道保护层，具有 通过插入栅极绝缘层，半导体层和沟道保护层覆盖栅电极的部分，以及具有覆盖栅电极的部分的源电极，插入栅极绝缘层，该方法增强晶体管特性 的有源矩阵基板，具有最小的泄漏和去除由电子和空穴的存在产生的截止电流。

公开(公告)号：US5474941A

公开(公告)日：1995-12-12

申请号：US154116

申请日：1993-11-18

申请人： Yasuhiro Mitani ,  Hirohisa Tanaka ,  Hirosshi Morimoto ,  Tomohiko Yamamoto

发明人： Yasuhiro Mitani ,  Hirohisa Tanaka ,  Hirosshi Morimoto ,  Tomohiko Yamamoto

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675

摘要： A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

摘要翻译： 一种使用在栅绝缘层覆盖的绝缘基板上具有栅电极的薄膜晶体管制造有源矩阵基板的方法，栅极绝缘层上的半导体层，半导体层上的沟道保护层，具有 通过插入栅极绝缘层，半导体层和沟道保护层覆盖栅电极的部分，以及具有覆盖栅电极的部分的源电极，插入栅极绝缘层，该方法增强晶体管特性 的有源矩阵基板，具有最小的泄漏和去除由电子和空穴的存在产生的截止电流。

公开(公告)号：US5396354A

公开(公告)日：1995-03-07

申请号：US094307

申请日：1993-07-20

申请人： Yasunori Shimada ,  Tomohiko Yamamoto ,  Hiroshi Morimoto ,  Yoshimi Kojima ,  Mitsuhiro Koden ,  Masaru Yoshida

发明人： Yasunori Shimada ,  Tomohiko Yamamoto ,  Hiroshi Morimoto ,  Yoshimi Kojima ,  Mitsuhiro Koden ,  Masaru Yoshida

IPC分类号： G02F1/136 ,  G02F1/1365 ,  H01L49/02 ,  H01L45/00

CPC分类号： G02F1/1365

摘要： In the liquid crystal display, a liquid crystal layer is provided between a first insulating substrate and a second insulating substrate. A plurality of first electrodes are arranged in parallel on the first insulating substrate in a first direction, and a first insulating layer is formed on the entire surface of the first insulating substrate and covers the first electrodes. A semiconductor layer is formed on the first insulating layer, and a second insulating layer is formed thereon and covers the entire surface of the first insulating substrate. This triple-layered structure constitutes a switching element array. A plurality of second electrodes are arranged in parallel on the second insulating electrode in a second direction crossing the first direction. Thus, the switching element array sandwiched between the first and second electrodes is used for driving the liquid crystal layer.

摘要翻译： 在液晶显示器中，液晶层设置在第一绝缘基板和第二绝缘基板之间。 多个第一电极在第一绝缘基板上沿第一方向平行布置，第一绝缘层形成在第一绝缘基板的整个表面上并覆盖第一电极。 在第一绝缘层上形成半导体层，在其上形成第二绝缘层，覆盖第一绝缘基板的整个表面。 该三层结构构成开关元件阵列。 多个第二电极在与第一方向交叉的第二方向上平行布置在第二绝缘电极上。 因此，夹在第一和第二电极之间的开关元件阵列用于驱动液晶层。

公开(公告)号：US5672251A

公开(公告)日：1997-09-30

申请号：US408976

申请日：1995-03-23

申请人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

发明人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

IPC分类号： C23C14/02 ,  G02F1/1362 ,  H01L21/28 ,  H01L21/336 ,  H01L21/48 ,  H01L23/14 ,  H01L29/49 ,  H01L29/786 ,  C23C14/34 ,  C23C14/48 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L29/66765 ,  C23C14/022 ,  G02F1/136286 ,  H01L21/28008 ,  H01L21/4846 ,  H01L23/14 ,  H01L29/4908 ,  H01L29/78603 ,  H01L2924/0002

摘要： The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.

摘要翻译： 本发明的金属线路板的制造方法包括以下步骤：在基板的表面上注入氮气; 通过溅射法形成金属膜，该金属膜包括通过溅射法在其上注入氮的衬底的表面上的Ta和Nb中的一个作为主要成分，通过图案化金属膜形成金属布线; 以及通过金属布线的表面的阳极氧化形成绝缘膜。 在基板或包括氮的保护层上形成金属配线形式的Ta或Nb的步骤中，对金属布线的表面进行阳极氧化，Ta离子或Nb离子不会进入基板。 此外，衬底或保护层掺杂有氮，并且通过其上的溅射方法形成Ta层。 溅射法具有将包含在基板中的材料混合到在涂层的初始阶段形成的膜的特征。 因此，掺杂氮气进入Ta膜，在基板或保护膜上形成薄的α-Ta层。 要外延生长的Ta层是不含杂质的α-Ta层。 因此，得到电阻率约为25微米欧米伽厘米的Ta层。

公开(公告)号：US5518936A

公开(公告)日：1996-05-21

申请号：US403125

申请日：1995-03-13

申请人： Tomohiko Yamamoto ,  Yasunori Shimada ,  Hiroshi Morimoto

发明人： Tomohiko Yamamoto ,  Yasunori Shimada ,  Hiroshi Morimoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1365 ,  G02F1/1368 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L45/00 ,  H01L49/02 ,  H05K1/03 ,  H05K3/38

CPC分类号： H01L29/66765 ,  H01L21/28008 ,  H01L21/31683 ,  H01L29/4908 ,  H01L45/00 ,  G02F2001/136295

摘要： A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.

摘要翻译： 公开了一种在绝缘基板上制造金属布线的方法。 该方法包括以下步骤：在绝缘基板的预定位置上形成预定形状的金属布线层，金属布线层由能被氧化的金属制成; 用杂质元素注入金属布线层; 以及通过在注入杂质元素之后氧化金属布线层的表面而形成绝缘层。

公开(公告)号：US5434363A

公开(公告)日：1995-07-18

申请号：US086708

申请日：1993-07-07

申请人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

发明人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

IPC分类号： G02F1/13 ,  C23C14/02 ,  C23C14/18 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/48 ,  H01L23/15 ,  H01L29/49 ,  H01L29/786 ,  H05K1/09

CPC分类号： G02F1/13439 ,  C23C14/022 ,  G02F1/136286 ,  H01L21/4846 ,  H01L23/15 ,  H01L29/4908 ,  H01L29/78603 ,  G02F1/1362 ,  H01L2924/0002

摘要： A metallic wiring board includes nitrogen implanted in a surface of a substrate or a protective layer including nitrogen formed on the substrate upon which is formed a metallic film including, as a main component, one of Ta and Nb. An insulating film covering the metallic wiring is formed by anodic oxidation. The nitrogen in the substrate or the protective layer prevents Ta (or Nb) ions from entering the substrate during the anodic oxidation of the metallic wiring. As a result, insulating properties of the substrate are not degraded during the oxidation.

摘要翻译： 金属布线板包括注入到基板表面的氮或包含形成在基板上的氮的保护层，在该基板上形成有作为主要成分的Ta和Nb之一的金属膜。 通过阳极氧化形成覆盖金属布线的绝缘膜。 在金属布线的阳极氧化期间，衬底或保护层中的氮防止了Ta（或Nb）离子进入衬底。 结果，在氧化过程中，基板的绝缘性不会降低。

公开(公告)号：US08474130B2

公开(公告)日：2013-07-02

申请号：US13263991

申请日：2010-02-22

申请人： Yoshihiro Tokuda ,  Masafumi Yamamoto ,  Masanori Takahashi ,  Hideki Kobayashi ,  Kaoru Tanaka ,  Yuki Funaki ,  Tomohiko Yamamoto ,  Tetsuya Watanabe

发明人： Yoshihiro Tokuda ,  Masafumi Yamamoto ,  Masanori Takahashi ,  Hideki Kobayashi ,  Kaoru Tanaka ,  Yuki Funaki ,  Tomohiko Yamamoto ,  Tetsuya Watanabe

IPC分类号： B23P19/00 ,  F16D3/205

CPC分类号： F16D3/2055 ,  B23P19/086 ,  B23P21/002 ,  Y10T29/49895 ,  Y10T29/53091 ,  Y10T29/53687

摘要： Provided are a tripod constant velocity joint, and a method and a device for assembling the joint. The opening of a through-hole formed in an inner member of the tripod constant velocity joint has formed therein a tapered, reduced diameter section having a diameter tapered from the opening toward the inside. A first annular groove is formed in the side wall of a driving power transmission shaft, and a clip serving as an engaging member is engaged with the first annular groove. A second annular groove is formed in the inner wall of the through-hole in the inner member. In inserting the driving power transmission shaft through the through-hole in the inner member, the tapered, reduced diameter section guides the shaft in such a manner that the clip is contracted toward the bottom surface of the first annular groove. The clip expands and contracts due to the elasticity thereof when the positions of the first annular groove and the second annular groove coincide with each other.

摘要翻译： 提供三脚架等速万向节，以及组装接头的方法和装置。 形成在三球销等速万向节的内部构件中的通孔的开口形成有从开口向内侧逐渐变细的锥形的直径减小的部分。 第一环形槽形成在驱动动力传递轴的侧壁中，并且用作接合构件的夹与第一环形槽接合。 第二环形槽形成在内部构件中的通孔的内壁中。 在驱动动力传递轴通过内部构件中的通孔插入时，锥形减小部分引导轴，使得夹子朝向第一环形槽的底表面收缩。 当第一环形槽和第二环形槽的位置彼此重合时，夹子由于其弹性而膨胀和收缩。

公开(公告)号：US08456495B2

公开(公告)日：2013-06-04

申请号：US13063790

申请日：2009-07-17

申请人： Kohji Fujiwara ,  Takayuki Murai ,  Tomohiko Yamamoto

发明人： Kohji Fujiwara ,  Takayuki Murai ,  Tomohiko Yamamoto

IPC分类号： G09G5/10 ,  G09G3/36

CPC分类号： G09G3/3426 ,  G09G2320/064 ,  G09G2330/021 ,  G09G2360/16

摘要： In a method of controlling power of a light emitting device for image display that irradiates illumination light from divided regions, light emission brightness data of each light emitting element of the light emitting device is determined based on image data for image display (S20). Power in each region and total light emission power are computed based on the light emission brightness data of each light emitting element for each region (S40). If the computed total light emission power exceeds predetermined allowable power, the power in each region is limited so that the total light emission power is equal to or less than the predetermined allowable power (S50).

摘要翻译： 在对从分割区域照射照明光的图像显示用发光装置的电力进行控制的方法中，基于图像显示用图像数据确定发光装置的各发光元件的发光亮度数据（S20）。 基于每个区域的每个发光元件的发光亮度数据计算每个区域的功率和总发光功率（S40）。 如果计算出的总发光功率超过预定的容许功率，则限制每个区域的功率，使得总的发光功率等于或小于预定的容许功率（S50）。

公开(公告)号：US20120257408A1

公开(公告)日：2012-10-11

申请号：US13516812

申请日：2010-11-01

申请人： Atsuyuki Tanaka ,  Tomohiko Yamamoto

发明人： Atsuyuki Tanaka ,  Tomohiko Yamamoto

IPC分类号： F21V8/00 ,  F21V13/02 ,  G02B6/00

CPC分类号： G02B6/002 ,  G02B6/0021 ,  G02B6/0031 ,  G02B6/0078

摘要： In the present invention, a light guide member is provided that can locally control the amount of planar backlight and that is suitable for a thin illumination device. In the light guide member (11), a tubular portion (12) includes a recess (DH) that tapers inward from a top surface (12U) and a constriction line (LN) that is recessed inward from a side surface (12S) and that is along a tube axis direction. A wall portion (13) that is connected to the light guide member (11) and that extends in a direction intersecting the tube axis direction includes, on a side wall (13S), a rough surface (RS) for changing the light within the wall portion such that an optical path becomes suitable for emission to the outside.

摘要翻译： 在本发明中，提供了可以局部地控制平面背光的量并且适合于薄型照明装置的导光构件。 在导光构件（11）中，管状部分（12）包括从顶表面（12U）向内渐缩的凹部（DH）和从侧表面（12S）向内凹陷的收缩线（LN），和 即沿管轴方向。 与导光构件（11）连接并且沿与管轴方向交叉的方向延伸的壁部（13）在侧壁（13S）上包括用于改变光源的粗糙面（RS） 壁部分，使得光路适合于向外部发射。

公开(公告)号：US20120230008A1

公开(公告)日：2012-09-13

申请号：US13508552

申请日：2010-10-01

申请人： Yuhsaku Ajichi ,  Tomohiko Yamamoto

发明人： Yuhsaku Ajichi ,  Tomohiko Yamamoto

IPC分类号： F21V13/12

CPC分类号： G02F1/133512 ,  G02B6/0031 ,  G02B6/0051 ,  G02B6/0053 ,  G02B6/0056 ,  G02B6/0088 ,  G02F1/133536 ,  G02F1/133615

摘要： An object is to implement a narrowed picture-frame while suppressing the occurrence of light leakage and a reduction in luminance in an edge-light type backlight device. A backlight device is composed of LEDs (40); a side chassis (51) supporting a board having the LEDs (40) mounted thereon; a light guide plate (20) for allowing light emitted from the LEDs (40) to exit toward a liquid crystal panel in a planar manner; a reflection sheet (30) for allowing light traveling toward a back surface side within the light guide plate (20) to be reflected thereby; optical sheets (10) including a reflection type polarizer (11), a prism sheet (12), and a diffuser (13); and a top chassis (52) disposed on top of the optical sheets (10). Black printing (60) is provided in a part of the region of the diffuser (13). A length of the reflection type polarizer (11) is longer than a length of the light guide plate (20) such that an edge of the reflection type polarizer (11) is located closer to a side of the LEDs (40) than is an edge surface of the light guide plate (20).

摘要翻译： 本发明的目的是在抑制边缘光型背光装置中的光泄漏的发生和亮度的降低的同时实现缩小的相框。 背光装置由LED（40）构成; 支撑安装在其上的LED（40）的板的侧面底架（51） 导光板（20），其用于使从所述LED（40）发射的光以平面方式朝向液晶面板排出; 用于允许在导光板（20）内朝向背面侧移动的光被反射的反射片（30） 包括反射型偏振器（11），棱镜片（12）和扩散器（13）的光学片（10） 以及设置在所述光学片（10）的顶部上的顶板（52）。 黑色印刷（60）设置在扩散器（13）的区域的一部分中。 反射型偏振器（11）的长度比导光板（20）的长度长，使得反射型偏振片（11）的边缘比LED（40）的一侧更靠近LED 导光板（20）的边缘表面。