公开(公告)号：US20170345961A1

公开(公告)日：2017-11-30

申请号：US15604992

申请日：2017-05-25

Applicant: Silergy Semiconductor Technology (Hangzhou) Ltd.

Inventor： Junli Shentu ,  Jiaming Ye

IPC: H01L31/167 ,  H01L31/0216 ,  H01L31/0203 ,  H01L31/02 ,  G01J5/10 ,  H01L31/18 ,  G01J1/42

CPC classification number: H01L31/167 ,  G01J1/0209 ,  G01J1/0214 ,  G01J1/0271 ,  G01J1/0488 ,  G01J1/4204 ,  G01J5/10 ,  H01L31/00 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02165 ,  H01L31/18

Abstract: Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.

公开(公告)号：US20170229592A1

公开(公告)日：2017-08-10

申请号：US15017057

申请日：2016-02-05

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0411 ,  G01J1/42 ,  H01L25/167 ,  H01L31/103

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

公开(公告)号：US09704837B1

公开(公告)日：2017-07-11

申请号：US15253120

申请日：2016-08-31

Applicant: LITE-ON SINGAPORE PTE. LTD.

Inventor： Teck-Chai Goh ,  Sin-Heng Lim ,  Guang-Li Song

IPC: H01L25/16 ,  H01L25/00 ,  H01L23/58 ,  H01L23/06 ,  H01L31/0203 ,  G01J1/42 ,  G01V8/00

CPC classification number: H01L23/585 ,  G01J1/0209 ,  G01J1/0214 ,  G01J1/4204 ,  G01V8/00 ,  G01V8/10 ,  H01L23/06 ,  H01L25/167 ,  H01L31/0203

Abstract: A detection device and a method of manufacturing the same are disclosed. The detection device includes a detection module and a housing module disposed on the detection module. The detection module includes a substrate, an emission unit, and a detection unit. The substrate includes an emission end area on which the emission unit is disposed, and a receiver end area on which the detection unit is disposed. The housing module includes a plastic housing unit having a receiving space and an opening, and a metallic shielding unit disposed on the plastic housing unit. The receiving space is divided into a first receiving space and a second receiving space by the metallic shielding unit, and the opening is divided into an emission hole and a detection hole by the metallic shielding unit. By the above-mentioned means, the distance between the emission hole and the detection hole is reduced.

公开(公告)号：US20170141241A1

公开(公告)日：2017-05-18

申请号：US15353397

申请日：2016-11-16

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Qichuan Yu ,  Hartmut Rudmann ,  Ji Wang ,  Kian Siang Ng ,  Simon Gubser ,  Sonja Hanselmann

IPC: H01L31/0203 ,  H01L31/0232 ,  H01L31/0216 ,  G01J1/02 ,  H01L31/12

CPC classification number: G01J1/0295 ,  G01J1/0209 ,  G01J1/0214 ,  G01J1/0271 ,  H01L31/173

Abstract: Disclosed are optical devices and methods of manufacturing optical devices. An optical device can include a substrate; an optical emitter chip affixed to the front surface of the substrate; and an optical sensor chip affixed to the front surface of the substrate. The optical sensor chip can include a main sensor and a reference sensor. The optical device can include an opaque dam separating the main optical sensor and the reference sensor. The optical device can include a first transparent encapsulation block encapsulating the optical emitter chip and the reference optical sensor and a second transparent encapsulation block encapsulating the main optical sensor. The optical device can include an opaque encapsulation material encapsulating the first transparent encapsulation block and the second transparent encapsulation block with a first opening above the main optical sensor and a second opening above the optical emitter chip.

公开(公告)号：US09645238B1

公开(公告)日：2017-05-09

申请号：US14981196

申请日：2015-12-28

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En Luan

IPC: G01J1/42 ,  G01S17/02 ,  G01J1/04

CPC classification number: G01S17/026 ,  G01J1/0204 ,  G01J1/0209 ,  G01J1/0271 ,  G01J1/0488 ,  G01J1/06 ,  G01J1/42 ,  G01S7/4813 ,  H01L31/167 ,  H01L2224/73265

Abstract: The embodiments of the present disclosure provide a proximity sensor, an electronic apparatus and a method for manufacturing a proximity sensor. The proximity sensor comprises a substrate, a sensor chip, a light-emitting device, a non-transparent isolation structure and a non-transparent molding material, wherein the sensor chip is located on the substrate and electrically coupled to the substrate; the light-emitting device is located on the sensor chip and electrically coupled to the sensor chip; the non-transparent isolation structure is located on the sensor chip and isolates the light-emitting device from a sensor region of the sensor chip; and the non-transparent molding material at least partially covers the substrate, the sensor chip and the non-transparent isolation structure, such that a portion of the proximity sensor which is located right above the sensor region and the light-emitting device is not covered by the non-transparent molding material.

公开(公告)号：US20170123064A1

公开(公告)日：2017-05-04

申请号：US14981196

申请日：2015-12-28

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En LUAN

IPC: G01S17/02 ,  G01J1/04 ,  G01J1/42

CPC classification number: G01S17/026 ,  G01J1/0204 ,  G01J1/0209 ,  G01J1/0271 ,  G01J1/0488 ,  G01J1/06 ,  G01J1/42 ,  G01S7/4813 ,  H01L31/167 ,  H01L2224/73265

Abstract: The embodiments of the present disclosure provide a proximity sensor, an electronic apparatus and a method for manufacturing a proximity sensor. The proximity sensor comprises a substrate, a sensor chip, a light-emitting device, a non-transparent isolation structure and a non-transparent molding material, wherein the sensor chip is located on the substrate and electrically coupled to the substrate; the light-emitting device is located on the sensor chip and electrically coupled to the sensor chip; the non-transparent isolation structure is located on the sensor chip and isolates the light-emitting device from a sensor region of the sensor chip; and the non-transparent molding material at least partially covers the substrate, the sensor chip and the non-transparent isolation structure, such that a portion of the proximity sensor which is located right above the sensor region and the light-emitting device is not covered by the non-transparent molding material.

公开(公告)号：US20160351605A1

公开(公告)日：2016-12-01

申请号：US14818740

申请日：2015-08-05

Applicant: SK hynix Inc.

Inventor： Yun-Hui YANG

IPC: H01L27/146 ,  G01J1/44

CPC classification number: H01L27/14607 ,  G01J1/0209 ,  G01J1/0488 ,  G01J1/06 ,  G01J1/44 ,  G01J3/0208 ,  G01J3/0259 ,  G01J3/0262 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627

Abstract: An image sensor includes a substrate including photoelectric conversion elements for a plurality of unit pixels, which are two-dimensionally arranged in a pixel array; a light transmission member on the substrate; a grid structure in the light transmission member and having multiple layers; and a light collection member on the light transmission member, wherein the grid structure is tilted for respective chief ray angles of the plurality of unit pixels according to locations of the plurality of unit pixels in the pixel array.

Abstract translation: 图像传感器包括：基板，包括用于多个单位像素的光电转换元件，二维排列成像素阵列; 在所述基板上的透光构件; 在透光构件中具有多个层的栅格结构; 以及在所述光透射部件上的光收集部件，其中，根据所述像素阵列中的所述多个单位像素的位置，所述栅格结构针对所述多个单位像素的各自的主光线角度倾斜。

公开(公告)号：US20160020348A1

公开(公告)日：2016-01-21

申请号：US14797004

申请日：2015-07-10

Applicant: THALES

Inventor： Mane-Si Laure LEE-BOUHOURS ,  Brigitte LOISEAUX ,  Frédéric DIAZ ,  Gaëlle LEHOUCQ

IPC: H01L31/054 ,  H01L31/0725 ,  H01L31/047

CPC classification number: H01L31/054 ,  G01J1/0209 ,  G01J1/0407 ,  G01J1/0411 ,  G01J3/0208 ,  G01J3/0259 ,  G01J3/1804 ,  G01J2001/4266 ,  H01L31/047 ,  H01L31/0543 ,  H01L31/0549 ,  H01L31/0725 ,  Y02E10/52

Abstract: A photovoltaic module comprises at least one photovoltaic cell and one concentration optic device, to be illuminated by a light flux emitting at at least one illumination wavelength belonging to a band of wavelengths defined by a minimum wavelength and a maximum wavelength, the band of wavelengths being that of the solar radiation of the order of [380 nm-1600 nm]. The concentration optic device is a monolithic component and comprises at least one diffractive structure comprising subwavelength patterns, defined in a structured material; the patterns having at least one dimension less than or equal to the average illumination wavelength divided by the refractive index of the structured material; the patterns being separated from one another by subwavelength distances, defined between centres of adjacent patterns; the concentration optic device ensuring at least one focusing function and one diffraction function. A solar panel comprising the photovoltaic module is also provided.

Abstract translation: 光伏模块包括由属于由最小波长和最大波长限定的波长带的至少一个照明波长发射的光束照射的至少一个光伏电池和一个集中光学器件，波长波段为 太阳辐射为[380nm-1600nm]的数量级。 所述浓度光学器件是整体部件，并且包括至少一个衍射结构，所述衍射结构包括以结构化材料限定的亚波长图案; 所述图案具有小于或等于所述平均照明波长的至少一个维度除以所述结构材料的折射率; 这些图案通过在相邻图案的中心之间定义的亚波长距离彼此分开; 集中光学装置确保至少一个聚焦功能和一个衍射功能。 还提供了包括光伏模块的太阳能电池板。

公开(公告)号：US08981383B1

公开(公告)日：2015-03-17

申请号：US13412449

申请日：2012-03-05

Applicant: Gregory Alan Fish ,  Anand Ramaswamy

Inventor： Gregory Alan Fish ,  Anand Ramaswamy

IPC: G02B6/10

CPC classification number: H01L31/024 ,  G01J1/0209 ,  G01J1/0252 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention describe substrates, used to form optical devices, which include high thermal conductivity intermediate layers. Said substrates comprise a bulk layer, an optical device layer comprising a first material, and an intermediate layer disposed between the bulk layer and the device layer comprising a second material having a higher thermal conductivity and a lower index of refraction than the first material.In the resulting devices, said intermediate layer functions as part of the device layer structure—i.e., provides optical or electrical power dissipation (i.e. thermal) functionality for the device formed from said substrate. Thus, optical devices do not necessarily need to utilize an add-on packaging solution for heat absorption when formed from substrate stacks according to embodiments of the invention. Moreover, in some embodiments, said intermediate layer is located at “zero-distance” from the source of the heat generation, thereby efficiently transferring heat out of that region.

Abstract translation: 本发明的实施例描述了用于形成光学器件的衬底，其包括高导热性中间层。 所述衬底包括体层，包括第一材料的光学器件层和设置在本体层和器件层之间的中间层，其包括具有比第一材料更高的导热性和较低折射率的第二材料。 在所得到的器件中，所述中间层用作器件层结构的一部分，即为由所述衬底形成的器件提供光或电功率耗散（即热）功能。 因此，根据本发明的实施例，光学器件不一定需要利用由衬底叠层形成的附加包装解决方案用于吸热。 此外，在一些实施例中，所述中间层位于距离发热源的“零距离”处，从而有效地将热量传出该区域。

公开(公告)号：US20140246571A1

公开(公告)日：2014-09-04

申请号：US13588248

申请日：2012-08-17

Applicant: Guoliang Li ,  Xuezhe Zheng ,  Ying L. Luo ,  Ashok V. Krishnamoorthy

Inventor： Guoliang Li ,  Xuezhe Zheng ,  Ying L. Luo ,  Ashok V. Krishnamoorthy

IPC: G01J1/04 ,  G01J1/42

CPC classification number: G01J1/0407 ,  G01J1/0209 ,  G01J1/0425 ,  G01J1/42 ,  G02B6/12004 ,  G02B6/124

Abstract: An integrated optical device includes a photo-detector (such as germanium) optically coupled to an optical waveguide. This photo-detector is deposited on the optical waveguide, and an optical signal propagating in the optical waveguide may be evanescently coupled to the photo-detector. In order to increase the absorption length of the photo-detector, a mirror (such as a distributed Bragg reflection grating) is included in the optical waveguide near the end of the photo-detector. This mirror reflects the optical signal back toward the photo-detector, thereby increasing the absorption of the optical signal by the photo-detector. In addition, absorption may be reduced by using electrical contacts that are electrically coupled to the photo-detector at locations where the optical mode of the optical signal is largely in the underlying optical waveguide, and by using a fingered metal layer to couple to the electrical contacts.

Abstract translation: 集成光学器件包括光耦合到光波导的光检测器（例如锗）。 该光检测器沉积在光波导上，并且在光波导中传播的光信号可以ev逝地耦合到光检测器。 为了增加光检测器的吸收长度，在光检测器端部附近的光波导中包括反射镜（例如分布式布拉格反射光栅）。 该反射镜将光信号反射回光检测器，由此增加光信号由光检测器的吸收。 此外，通过使用在光信号的光学模式主要位于下面的光波导中的位置处电耦合到光检测器的电接触，并且通过使用指状金属层耦合到电 联系人