公开(公告)号：US5623099A

公开(公告)日：1997-04-22

申请号：US517436

申请日：1995-08-21

Applicant: Gunther Schuster ,  Udo Nothelfer

Inventor： Gunther Schuster ,  Udo Nothelfer

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

CPC classification number: G01P15/0802 ,  G01P15/125 ,  G01P2015/0828

Abstract: This invention concerns a capacitive acceleration sensor complete with planar build-up, in particular for use as a component part of a vehicle occupant protection system within a motor vehicle. A self-supporting structure will be movably located within a hollow space between two semiconductor elements which are electrically insulated from each other but mechanically bonded, where an acceleration force acting on the inert mass of the self-supporting structure will cause a change in the distance between this self-supporting structure and the semiconductor element. This produces a change in capacity which can be evaluated by means of suitable circuitry.

Abstract translation: 本发明涉及一种具有平面建立的电容式加速度传感器，特别是用作机动车辆内的车辆乘员保护系统的组成部分。 自支撑结构将可移动地位于彼此电绝缘但机械结合的两个半导体元件之间的中空空间中，其中作用在自支撑结构的惰性质量上的加速力将导致距离的变化 在该自支撑结构和半导体元件之间。 这产生容量的变化，其可以通过合适的电路来评估。

公开(公告)号：US5578843A

公开(公告)日：1996-11-26

申请号：US318918

申请日：1994-10-06

Applicant: Raffi M. Garabedian ,  M. Salleh Ismail ,  Gary J. Pashby

Inventor： Raffi M. Garabedian ,  M. Salleh Ismail ,  Gary J. Pashby

IPC: B81B3/00 ,  B81C1/00 ,  G01B7/14 ,  G01L9/00 ,  G01P15/12 ,  H01L29/84 ,  H01L27/20

CPC classification number: H01L29/84 ,  B81C1/00238 ,  G01B7/14 ,  G01L9/0073 ,  G01L9/0098 ,  G01P15/124 ,  B81B2203/0127 ,  B81C2203/036 ,  B81C2203/038 ,  G01P2015/0828

Abstract: Fabrication of semiconductor devices with movable structures includes local oxidation of a wafer and oxide removal to form a depression in an elevated bonding surface. A second wafer is fusion bonded to the elevated bonding surface and shaped to form a flexible membrane. An alternative fabrication technique forms a spacer having a depression on a first wafer and active regions on a second wafer, and fusion bonds the wafers together with the depression over the active regions. Devices formed are integrable with standard MOS devices and include FETs, capacitors, and sensors with movable membranes. An FET sensor has gate and drain coupled together and a drain-source voltage which depends on the gate's deflection. Selected operating current, channel length, and channel width provide a drain-source voltage linearly related to gate deflection. Alternatively, two transistors subjected to the same gate deflection provide a differential voltage related to the square root of the deflection if channel currents or channel widths differ. Transistors subjected to the different gate deflections provide a differential signal that cancels effects that are independent of deflection. A capacitive sensor includes a doped region underlying the center of a flexible membrane. The doped region is isolated from a surrounding region which is biased at the voltage of the membrane.

Abstract translation: 具有可移动结构的半导体器件的制造包括晶片的局部氧化和氧化物去除以在升高的结合表面中形成凹陷。 第二个晶片被熔合到提升的粘合表面上并成形为形成柔性膜。 替代的制造技术形成了在第一晶片上具有凹陷并且在第二晶片上具有有源区域的间隔物，并且在活性区域上将晶片与凹陷熔合在一起。 形成的器件可与标准MOS器件集成，包括FET，电容器和带有可移动膜的传感器。 FET传感器具有耦合在一起的栅极和漏极以及取决于栅极偏转的漏极 - 源极电压。 所选的工作电流，沟道长度和通道宽度提供与栅极偏转线性相关的漏极 - 源极电压。 或者，如果沟道电流或沟道宽度不同，则经受相同栅极偏转的两个晶体管提供与偏转的平方根相关的差分电压。 经受不同门极偏转的晶体管提供了抵消与偏转无关的影响的差分信号。 电容传感器包括在柔性膜的中心下方的掺杂区域。 掺杂区域与偏置在膜电压的周围区域隔离。

公开(公告)号：US5567878A

公开(公告)日：1996-10-22

申请号：US441195

申请日：1995-05-15

Applicant: Eiji Kobayashi

Inventor： Eiji Kobayashi

IPC: G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  G01P15/08

CPC classification number: G01P1/003 ,  G01P15/12 ,  G01P2015/0828

Abstract: A cantilever semiconductor acceleration sensor element is supported by a pedestal fixed to a base. The base is sealed with a cap, forming an airtight space between the cap and the base that is filled with silicone oil. A central portion of the cap is deformed by an external force to increase the pressure of the silicone oil in the space to a pressure above atmospheric pressure. The generation of air bubbles on the sensor element, even at low temperature, is avoided because of the high pressure of the silicone oil.

Abstract translation: 悬臂半导体加速度传感器元件由固定到基座的基座支撑。 基座用盖子密封，在盖子和填充有硅油的基座之间形成气密的空间。 盖的中心部分通过外力变形，以将空间中的硅油的压力增加到高于大气压的压力。 由于硅油的高压，因此即使在低温下也能够避免在传感器元件上产生气泡。

公开(公告)号：US5551294A

公开(公告)日：1996-09-03

申请号：US380144

申请日：1995-01-27

Applicant: Jean Hermann

Inventor： Jean Hermann

IPC: G01P15/08 ,  G01P15/125 ,  H01L21/00

CPC classification number: B81B7/0048 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  G01P2015/0828

Abstract: A micromachined measuring cell is adapted to be mounted on a support and has a measuring sensor (121) and an assembly structure (120) distinct from one another and associated with each other by a connecting arm (128). At least one part element (103b) of the assembly structure, one part (133) of the connecting arm and one part (103a) of the sensor (121) are produced as one single piece. The assembly structure (120) of this measuring cell is preferably in the shape of a frame surrounding the sensor (121).

Abstract translation: 微加工测量单元适于安装在支撑件上，并具有通过连接臂（128）彼此不同且彼此相关联的测量传感器（121）和组合结构（120）。 组装结构的至少一个部件（103b），连接臂的一部分（133）和传感器（121）的一部分（103a）被制造为一个单件。 该测量单元的组装结构（120）优选为围绕传感器（121）的框架的形状。

公开(公告)号：US5510156A

公开(公告)日：1996-04-23

申请号：US294389

申请日：1994-08-23

Applicant: Yang Zhao

Inventor： Yang Zhao

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/13 ,  C23C14/02 ,  B05D1/32 ,  B05D1/36 ,  B65D6/08

CPC classification number: B81C1/0096 ,  B81B3/001 ,  G01P15/0802 ,  G01P15/131 ,  B81C2201/115 ,  G01P2015/0814 ,  G01P2015/0828 ,  H01J2209/0223 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A method for forming sub-micron sized bumps on the bottom surface of a suspended microstructure or the top surface of the underlying layer in order to reduce contact area and sticking between the two layers without the need for sub-micron standard photolithography capabilities and the thus-formed microstructure. The process involves the deposition of latex spheres on the sacrificial layer which will later temporarily support the microstructure, shrinking the spheres, depositing aluminum over the spheres, dissolving the spheres to leave openings in the metal layer, etching the sacrificial layer through the openings, removing the remaining metal and depositing the microstructure material over the now textured top surface of the sacrificial layer.

Abstract translation: 一种用于在悬浮的微结构的底表面或下层的顶表面上形成亚微米级的凸起的方法，以便减少接触面积和两层之间的粘附，而不需要亚微米标准的光刻能力，因此 形成微观结构。 该方法包括将胶乳球体沉积在牺牲层上，其将稍后暂时支撑微结构，收缩球体，在球体上沉积铝，溶解球体以在金属层中留下开口，通过开口蚀刻牺牲层，去除 剩余的金属并将微结构材料沉积在牺牲层的现在变形的顶部表面上。

公开(公告)号：US5504026A

公开(公告)日：1996-04-02

申请号：US422036

申请日：1995-04-14

Applicant: Joseph T. Kung

Inventor： Joseph T. Kung

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  B81C99/00 ,  G01P1/02 ,  G01P15/08 ,  H01L21/784

CPC classification number: G01P15/0802 ,  B81C1/00611 ,  G01P1/023 ,  B81C2201/0119 ,  G01P2015/0828

Abstract: A method for fabricating a micromechanical device and a semiconductor circuit on a substrate includes the steps of forming the micromechanical device on a device area of the substrate, the micromechanical device being embedded in a sacrificial material, selectively depositing a planarization layer on the substrate in a circuit area thereof, forming the semiconductor circuit on the planarization layer in the circuit area and removing the sacrificial material from the embedded micromechanical device. In a preferred embodiment, the planarization layer is an epitaxial silicon layer. A protective cap may be formed over the micromechanical device, so that it is completely encapsulated and is thereby protected against particulate contamination.

Abstract translation: 在衬底上制造微机械器件和半导体电路的方法包括以下步骤：在衬底的器件区域上形成微机械器件，微机械器件嵌入牺牲材料中，在衬底上选择性地沉积平坦化层 在电路区域的平坦化层上形成半导体电路，并从嵌入式微机械器件中除去牺牲材料。 在优选实施例中，平坦化层是外延硅层。 可以在微机械装置上形成保护帽，使得其完全被包封并由此被保护免受颗粒污染。

公开(公告)号：US5454266A

公开(公告)日：1995-10-03

申请号：US130180

申请日：1993-10-01

Applicant: Michel A. Chevroulet ,  Ted Smith

Inventor： Michel A. Chevroulet ,  Ted Smith

IPC: G01L1/14 ,  G01P15/125 ,  G01P15/13 ,  G01P15/00

CPC classification number: G01P15/131 ,  G01P2015/0828

Abstract: The device for measuring a force, and notably an inertial force corresponding to an acceleration, comprises a capacitive detector comprising two capacitors, the difference between the capacitances of which is a function of the force measured.The measuring device further comprises an electronic circuit permitting the creation of an output signal determined by a comparison of the value of the two capacitances. The signal is created in the form of a digital signal having a modulated pulse density.

Abstract translation: 用于测量力并且特别是对应于加速度的惯性力的装置包括电容检测器，其包括两个电容器，其电容之间的差是所测量的力的函数。 该测量装置还包括允许产生通过两个电容的值的比较确定的输出信号的电子电路。 信号以具有调制脉冲密度的数字信号的形式产生。

公开(公告)号：US5449909A

公开(公告)日：1995-09-12

申请号：US140854

申请日：1993-10-25

Applicant: William J. Kaiser ,  Steven B. Waltman ,  Thomas W. Kenny

Inventor： William J. Kaiser ,  Steven B. Waltman ,  Thomas W. Kenny

IPC: G01P15/08 ,  G01P15/125 ,  G01P15/13 ,  G01Q60/12 ,  G01Q60/16 ,  G01L1/04

CPC classification number: G01P15/131 ,  G01P15/0894 ,  G01P15/125 ,  G01P15/132 ,  G01P15/133 ,  G01P2015/0828 ,  Y10S977/852

Abstract: Methods and apparatus for measuring gravitational and inertial forces, magnetic fields, or wave or radiant energy acting on an object or fluid in space provide an electric tunneling current through a gap between an electrode and that object or fluid in space and vary that gap with any selected one of such forces, magnetic fields, or wave or radiant energy acting on that object or fluid. These methods and apparatus sense a corresponding variation in an electric property of that gap and determine the latter force, magnetic fields, or wave or radiant energy in response to that corresponding variation, and thereby sense or measure such parameters as acceleration, position, particle mass, velocity, magnetic field strength, presence or direction, or wave or radiant energy intensity, presence or direction.

Abstract translation: 用于测量作用在空间上的物体或流体的重力和惯性力，磁场或波或辐射能的方法和装置提供通过电极和空间中的物体或流体之间的间隙的电穿隧电流，并且与任何 选择一个这样的力，磁场或作用在该物体或流体上的波浪或辐射能。 这些方法和装置感测到该间隙的电性质的相应变化，并响应于相应的变化确定后者的力，磁场或波或辐射能，从而感测或测量诸如加速度，位置，粒子质量 ，速度，磁场强度，存在或方向，或波或辐射能量强度，存在或方向。

公开(公告)号：US5418681A

公开(公告)日：1995-05-23

申请号：US20086

申请日：1993-02-19

Applicant: Isabelle Thomas ,  Pierre O. Lefort ,  Christophe Legoux

Inventor： Isabelle Thomas ,  Pierre O. Lefort ,  Christophe Legoux

IPC: G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/78 ,  H01G7/00

CPC classification number: G01P15/125 ,  G01L9/0073 ,  G01P15/0802 ,  H01L21/78 ,  G01P2015/0828 ,  Y10T29/43

Abstract: A capacitive micro-sensor includes a sandwich of at least two silicon plates. A peripheral stripe of each side of one plate is assembled to a corresponding stripe of the opposing surface of an adjacent plate through an insulating layer. The lateral sides of the sandwich are provided with notches partially penetrating in each of the insulating layers, and are thicker than the thickness of the insulating layers.

Abstract translation: 电容式微传感器包括至少两个硅板的三明治。 一个板的每一侧的周边条纹通过绝缘层组装到相邻板的相对表面的相应条纹上。 三明治的侧面设置有在每个绝缘层中部分穿透的凹口，并且比绝缘层的厚度厚。

公开(公告)号：US5412988A

公开(公告)日：1995-05-09

申请号：US114170

申请日：1993-09-01

Applicant: Helmut Neff ,  Joachim Beeck

Inventor： Helmut Neff ,  Joachim Beeck

IPC: G01P15/11 ,  G01P15/08 ,  G01B7/24

CPC classification number: G01P15/11 ,  G01P2015/0828

Abstract: An acceleration sensor includes a silicon substrate with a micromechanical bender bar constituting a testing mass having one end mounted the silicon substrate and a free end opposite the one end. A ferromagnetic core is mounted on the free end of the micromechanical bender bar. An excitation coil is supported on the ferromagnetic core for furnishing an inhomogeneous magnetic field when supplied with an alternating current. A cooled superconducting quantum interference detector (SQUID) arrangement is mounted adjacent the ferromagnetic core for detecting changes in the inhomogeneous magnetic field produced by the excitation coil and produces a useful signal in dependence of changes in the inhomogeneous magnetic field.

Abstract translation: 加速度传感器包括具有微机械弯曲棒的硅衬底，微机械弯曲棒构成测试质量体，其一端安装硅衬底和与一端相对的自由端。 铁磁芯安装在微机械弯曲杆的自由端。 励磁线圈支撑在铁磁芯上，用于在提供交流电时提供不均匀的磁场。 冷却的超导量子干涉检测器（SQUID）装置安装在铁磁核心附近，用于检测由励磁线圈产生的不均匀磁场的变化，并根据不均匀磁场的变化产生有用的信号。