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    Process for making a cesiated diamond film field emitter and field emitter formed therefrom
    91.
    发明授权
    Process for making a cesiated diamond film field emitter and field emitter formed therefrom 失效
    用于制造由其形成的切割金刚石膜场发射极和场致发射体的方法

    公开(公告)号：US5888113A

    公开(公告)日：1999-03-30

    申请号：US829492

    申请日：1997-03-27

    Applicant: David F. Anderson ,  Simon W. Kwan

    Inventor： David F. Anderson ,  Simon W. Kwan

    IPC: H01J9/02

    CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2329/00

    Abstract: A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.

    Abstract translation: 用于制造精梳金刚石薄膜的方法包括（a）在约10-4托和约10-7托之间的真空中在金刚石膜上沉积一定数量的碘化铯，（b）将真空度增加至至少约10 -8 Torr，和（c）在金刚石膜上施加电子束，所述电子束具有足以解离所述碘化铯并将铯结合到金刚石膜的间隙中的能量。 根据该方法制备的切割的金刚石薄膜的工作电压相对于常规的非切割金刚石膜场发射体的工作电压降低了至少约2.5倍。

    Field effect electron source, associated display device and the method of production thereof
    92.
    发明授权
    Field effect electron source, associated display device and the method of production thereof 失效
    场效应电子源，相关显示装置及其生产方法

    公开(公告)号：US5836796A

    公开(公告)日：1998-11-17

    申请号：US548039

    申请日：1995-10-25

    Applicant: Joel Danroc

    Inventor： Joel Danroc

    IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

    CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

    Abstract: Process for the production of a field effect electron source and source obtained by said process, application to display means by cathodoluminescence. On an insulating substrate (2), said source comprises at least one cathode conductor (4), an insulating layer (6) covering the latter, at least one grid (8) formed on the insulating layer, holes (10) being formed through said grid and the insulating layer, and microtips (12) made from an electron emitting, metallic material, formed in said holes and covered with a deposit (13) of carbon diamond or diamond like carbon particles formed by electrophoresis or by joint electrochemical deposition of metal and carbon diamond or diamond like carbon.

    Abstract translation: 用于生产通过所述方法获得的场效应电子源和源的方法，通过阴极发光应用于显示装置。 在绝缘基板（2）上，所述源极包括至少一个阴极导体（4），覆盖其上的绝缘层（6），形成在绝缘层上的至少一个格栅（8），穿过 所述栅格和绝缘层，以及由电子发射金属材料制成的微尖端（12），形成在所述孔中并覆盖有通过电泳形成的碳金刚石或类金刚石碳颗粒沉积物（13），或通过电化学沉积 金属和碳金刚石或类似钻石的碳。

    Insulative barrier useful in field emission displays for reducing surface leakage
    93.
    发明授权
    Insulative barrier useful in field emission displays for reducing surface leakage 失效
    用于减少表面泄漏的场致发射显示器中的绝缘屏障

    公开(公告)号：US5831378A

    公开(公告)日：1998-11-03

    申请号：US918766

    申请日：1997-08-25

    Applicant: J. Brett Rolfson ,  Kevin Tjaden

    Inventor： J. Brett Rolfson ,  Kevin Tjaden

    IPC: H01J9/02 ,  H01L21/3105 ,  H01J1/16 ,  H01J1/02 ,  H01J1/62 ,  H01J19/10

    CPC classification number: H01L21/31053 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

    Abstract: A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.

    Abstract translation: 具有减小的表面泄漏的场发射器显示器包括由电介质区域包围的至少一个发射极尖端。 电介质区域由绝缘层的复合体形成，其中至少一个具有朝向发射极尖端延伸的翅片。 用于从发射极尖端提取电子的导电栅极设置在电介质区域的上方。 在撞击门之前，翅片增加了泄漏电荷行进路径的长度。

    Field emission cathode and a device based thereon
    94.
    发明授权
    Field emission cathode and a device based thereon 失效
    场致发射阴极及基于其的器件

    公开(公告)号：US5825122A

    公开(公告)日：1998-10-20

    申请号：US619704

    申请日：1996-03-26

    Applicant: Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

    Inventor： Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

    IPC: H01J31/12 ,  H01J1/304 ,  H01J19/24 ,  H01J1/30

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

    Abstract translation: PCT No.PCT / RU95 / 00154 Sec。 371日期1997年3月26日 102（e）1997年3月26日PCT PCT 1995年7月18日PCT公布。 公开号WO96 / 03762 日期1996年2月8日A矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作与放射器串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 发射极底部的高度（h）与直径（D）的比值不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

    Electron beam source and its manufacturing method and electron beam source apparatus and electron beam apparatus using the same
    95.
    发明授权
    Electron beam source and its manufacturing method and electron beam source apparatus and electron beam apparatus using the same 失效
    电子束源及其制造方法和电子束源装置及使用其的电子束装置

    公开(公告)号：US5811819A

    公开(公告)日：1998-09-22

    申请号：US568865

    申请日：1995-12-05

    Applicant: Takashi Ohshima ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    Inventor： Takashi Ohshima ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    IPC: H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01J37/073 ,  H01J37/06

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

    Abstract: An electron beam source is provided with an electron forming means such as a doped layer of Si for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided. An electron beam source apparatus and electron beam apparatus incorporating the electron beam source as defined above are also disclosed.

    Abstract translation: 电子束源设置有诸如Si的掺杂层的电子形成装置，用于在抑制从价带发射电子的同时在针状结构的尖端的表面附近形成导带电子。 针状结构的尖端的表面由单晶半导体或绝缘体形成。 优选地，在针状结构的表面上形成表面钝化层和/或高掺杂层。 此外，也可以提供用于激发在价带中的电子的装置。 还公开了包含如上所述的电子束源的电子束源装置和电子束装置。

    Cathode, electron beam emission apparatus using the same, and method of manufacturing the cathode
    96.
    发明授权
    Cathode, electron beam emission apparatus using the same, and method of manufacturing the cathode 失效
    阴极，使用其的电子束发射装置，以及制造阴极的方法

    公开(公告)号：US5763880A

    公开(公告)日：1998-06-09

    申请号：US610489

    申请日：1996-03-04

    Applicant: Hidetoshi Nisiyama ,  Masakuni Okamoto ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    Inventor： Hidetoshi Nisiyama ,  Masakuni Okamoto ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    IPC: H01J1/304 ,  H01J37/06 ,  H01J37/073 ,  H01J3/02

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2201/317 ,  H01J2237/06316

    Abstract: A cathode (e.g., a Schottky emission cathode) having an electron emitter of a tungsten single-crystal with a sharp point, and a heater connected to the electron emitter to heat it. The work function of the crystal face of the point of the electron emitter is reduced by providing adsorbed thereon a nitride of Zr, Ti, Y, Nb, Sc, V or La, or an oxide of Y, Sc, V or La. The nitride or oxide can be formed as a reservoir on the heater (from where it thermally diffuses to the point), or chemically adsorbed on the point. For forming the nitride or oxide on the point, the metal forming the nitride or oxide can be provided on the point and reacted with nitrogen or oxygen thereat to form the nitride or oxide; to provide the metal on the point, the metal forming the nitride or oxide can either be evaporated onto the point, or can form a reservoir on the heater and thermally diffuse therefrom to the point. The effect of reducing the work function results in a cathode having a narrow FWHM (full width at half maximum) of emission electrons and a high current density.

    Abstract translation: 具有具有尖锐点的钨单晶的电子发射体的阴极（例如，肖特基发射阴极）和连接到电子发射器以加热它的加热器。 通过在其上吸附Zr，Ti，Y，Nb，Sc，V或La的氮化物或Y，Sc，V或La的氧化物，可以减少电子发射体点的晶面的功函数。 氮化物或氧化物可以形成为加热器上的储存器（从其热扩散到该点）或化学吸附在该点上。 为了在该点上形成氮化物或氧化物，形成氮化物或氧化物的金属可以在该点上提供并在其上与氮气或氧气反应以形成氮化物或氧化物; 为了在该点上提供金属，形成氮化物或氧化物的金属可以蒸发到点上，或者可以在加热器上形成储存器，并从其中散射到该点。 降低功函数的效果导致发射电子具有窄FWHM（半高全宽）和高电流密度的阴极。

    Method of making a field emission electron source with random micro-tip structures
    99.
    发明授权
    Method of making a field emission electron source with random micro-tip structures 失效
    制备具有随机微尖端结构的场发射电子源的方法

    公开(公告)号：US5628659A

    公开(公告)日：1997-05-13

    申请号：US427464

    申请日：1995-04-24

    Applicant: Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

    Inventor： Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

    IPC: H01J9/02 ,  H01J1/30 ,  H01J9/42

    CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.

    Abstract translation: 一种系统和方法可用于制造场致发射器件，其中发射极材料（例如铜）沉积在已沉积在衬底上的电阻层上。 使用两个离子束源。 第一离子束源指向诸如钼的靶材料，用于将钼溅射到发射极材料上。 第二离子束源用于蚀刻发射体材料以产生锥体或微尖端。 然后将诸如无定形金刚石的低功函数材料沉积在微尖端上。

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