公开(公告)号：US20040227138A1

公开(公告)日：2004-11-18

申请号：US10784884

申请日：2004-02-24

Applicant: Chevron U.S.A. Inc.

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: H01L029/06 ,  H01L031/0312

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US06762543B1

公开(公告)日：2004-07-13

申请号：US09617351

申请日：2000-07-17

Applicant: Weng Poo Kang ,  Jimmy Lee Davidson ,  David V. Kerns, Jr.

Inventor： Weng Poo Kang ,  Jimmy Lee Davidson ,  David V. Kerns, Jr.

IPC: H01J130

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G01L9/0041 ,  G01L9/0047 ,  G01P15/0802 ,  G01P15/0894 ,  G01P2015/0828 ,  H01J1/3042 ,  H01J1/3044 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30457

Abstract: Diamond microtip field emitters are used in diode and triode vacuum microelectronic devices, sensors and displays. Diamond diode and triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract translation: 金刚石微尖端场发射器用于二极管和三极管真空微电子器件，传感器和显示器。 可以制造具有整体阳极和栅格结构的金刚石二极管和三极管器件。 在制造工艺中在发射体上形成超尖尖，其中金刚石以两步沉积顺序沉积到模腔中。 在沉积金刚石期间，仔细控制碳石墨含量以增强排放性能。 尖端或发射器通过后制造处理来进一步提高性能。

公开(公告)号：US20040119391A1

公开(公告)日：2004-06-24

申请号：US10733714

申请日：2003-12-11

Applicant: SI Diamond Technology, Inc.

Inventor： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

IPC: H01J001/00

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y15/00 ,  H01J2201/30457

Abstract: A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

Abstract translation: 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。

公开(公告)号：US06737793B2

公开(公告)日：2004-05-18

申请号：US10378650

申请日：2003-03-05

Applicant: Pehr Pehrsson ,  James Butler

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: An apparatus for emitting electrons is provided. The apparatus includes a subsurface emitter having a sharp tip, a substrate including a base, and electrical continuity between the tip, the base, and an external circuit. This emitter structure may be used to form individual emitters or arrays of emitters. Also provided is a method of making electron emitters which is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 提供一种用于发射电子的装置。 该装置包括具有尖锐尖端的地下发射器，包括基座的基板以及尖端，基座和外部电路之间的电连续性。 该发射器结构可以用于形成发射器的单独发射器或阵列。 还提供了一种制造电子发射体的方法，其包括将能量离子注入到金刚石晶格中以形成损坏的金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US06686696B2

公开(公告)日：2004-02-03

申请号：US09802585

申请日：2001-03-08

Applicant: Gerald T. Mearini ,  Laszlo A. Takacs

Inventor： Gerald T. Mearini ,  Laszlo A. Takacs

IPC: H01J2305

CPC classification number: H01J23/05 ,  H01J2201/30457 ,  H01J2201/32

Abstract: A radio frequency magnetron device for generating radio frequency power includes a cathode at least partially formed from a diamond material. An anode is disposed concentrically around the cathode. An electron field is provided radially between the anode and the cathode. First and second oppositely charged pole pieces are operatively connected to the cathode for producing a magnetic field in a direction perpendicular to the electric field. A filament is provided within the electron tube which when heated produces primary electrons. Alternatively, a voltage is applied to the anode which causes primary electrons to emit from the diamond coated cathode. A portion of the primary electrons travel in a circular path and induce radio frequency power. Another portion of the primary electrons spiral back and collide with the cathode causing the emission of secondary electrons. The secondary electron emission sustains operation of the magnetron device once the device has been started.

Abstract translation: 用于产生射频功率的射频磁控管装置包括至少部分由金刚石材料形成的阴极。 阳极围绕阴极同心地设置。 在阳极和阴极之间径向设置电子场。 第一和第二相对带电的极片可操作地连接到阴极，以在垂直于电场的方向上产生磁场。 在电子管内提供一根灯丝，当加热时产生一次电子。 或者，向阳极施加电压，其使一次电子从金刚石涂覆的阴极发射。 一部分一次电子以圆形路径行进并且感应射频功率。 一次电子的另一部分螺旋回来并与阴极碰撞引起二次电子的发射。 一旦装置启动，二次电子发射就能维持磁控管装置的操作。

公开(公告)号：US20030205959A1

公开(公告)日：2003-11-06

申请号：US10435480

申请日：2003-05-12

Inventor： Koichi Iida ,  Ichiro Saito ,  Shinichi Tachizono ,  Takeshi Yamagishi

IPC: H01J001/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30423 ,  H01J2201/30457

Abstract: The field emission type cathode (K) is made as the multilayered structure (33) in which the conductive platelike corpuscles 30 are piled, whereby an edge portion of end surface of a field emission type cathode K for emitting electrons is formed sharply and easily.

Abstract translation: 将场致发射型阴极（K）制成多层结构（33），其中导电板状微粒30被堆叠，由此形成了用于发射电子的场发射型阴极K的端面的边缘部分，并且容易地形成。

公开(公告)号：US06600262B1

公开(公告)日：2003-07-29

申请号：US09458830

申请日：1999-12-13

Applicant: Koichi Iida ,  Ichiro Saito ,  Shinichi Tachizono ,  Takeshi Yamagishi

Inventor： Koichi Iida ,  Ichiro Saito ,  Shinichi Tachizono ,  Takeshi Yamagishi

IPC: H01J6304

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30423 ,  H01J2201/30457

Abstract: The field emission type cathode. (K) is made as the multilayered structure (33) in which the conductive platelike corpuscles 30 are piled, whereby an edge portion of end surface of a field emission type cathode K for emitting electrons is formed sharply and easily.

Abstract translation: 场发射型阴极。 （K）被制成其中堆叠有导电板状微粒30的多层结构（33），由此形成了用于发射电子的场发射型阴极K的端面的边缘部分，并且容易地形成。

公开(公告)号：US06573643B1

公开(公告)日：2003-06-03

申请号：US09677361

申请日：2000-10-02

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J130

CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J1/316 ,  H01J9/027 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/3165

Abstract: A field emission cathode for use in flat panel displays is described including a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also described along with the use of the cathode to form a fluorescent light source.

Abstract translation: 描述了用于平板显示器的场发射阴极，其包括沉积在导电材料上以形成发射位点的导电材料层和用作低有效功函数材料的非晶金刚石膜层。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 还描述了使用阴极形成计算机屏幕，同时使用阴极来形成荧光光源。

公开(公告)号：US20030052080A1

公开(公告)日：2003-03-20

申请号：US09412536

申请日：1999-10-05

Inventor： YOUNG JOON BAIK ,  EUN SONG BAIK ,  DONG RYUL JEON

IPC: B29D011/00 ,  C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: H01J9/025 ,  C01B33/06 ,  C30B25/00 ,  C30B25/005 ,  C30B29/04 ,  C30B29/605 ,  H01J2201/30457

Abstract: A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.

Abstract translation: 制造纳米尺寸金刚石晶须的方法包括以下步骤：在基底上沉积金刚石膜，在沉积的金刚石膜上形成纳米尺寸的掩模图案，并通过使用纳米尺寸图案作为蚀刻来蚀刻金刚石膜 面具。 纳米尺寸的金刚石晶须可以用作新的场致发射冷阴极器件，从而推进了具有高性能的场致发射器件的实际应用，并且还可以应用于各种领域，例如新的复合材料和机械装置 。

公开(公告)号：US20020135311A1

公开(公告)日：2002-09-26

申请号：US10062037

申请日：2002-05-31

Applicant: SI Diamond Technology, Inc.

Inventor： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

IPC: G09G003/10

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y15/00 ,  H01J2201/30457

Abstract: A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

Abstract translation: 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。