公开(公告)号：US08258489B2

公开(公告)日：2012-09-04

申请号：US12750893

申请日：2010-03-31

Applicant: Frank Sinclair

Inventor： Frank Sinclair

IPC: H01J37/00 ,  H01J37/317

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: An energy contamination detection apparatus includes a membrane and a charge collection plate disposed at a distance from the membrane. The membrane is configured to receive an ion beam and allow a portion of the ion beam having energy levels above a desired energy level to pass therethrough toward the charge collection plate and absorb or reflect portions of the ion beam having energy levels at or below the desired energy level. A voltage source is electrically coupled to the charge collection plate for providing a bias voltage to the charge collection plate. A detection circuit is coupled to the charge collection plate and is configured to detect energy contamination based on an amount of charge collected on the charge collection plate.

Abstract translation: 能量污染检测装置包括设置在与膜隔开一定距离处的膜和电荷收集板。 膜被配置为接收离子束并且允许具有高于期望能级的能量级的一部分离子束通过其中朝向电荷收集板，并吸收或反射具有等于或低于期望值的能级的离子束的部分 能级。 电压源电耦合到电荷收集板，用于向电荷收集板提供偏置电压。 检测电路耦合到电荷收集板，并且被配置为基于在电荷收集板上收集的电荷量来检测能量污染。

公开(公告)号：US20120196047A1

公开(公告)日：2012-08-02

申请号：US13016912

申请日：2011-01-28

Applicant: Cheng-Hui Shen ,  Zhimin Wan

Inventor： Cheng-Hui Shen ,  Zhimin Wan

IPC: C23C14/48 ,  G06G7/62 ,  G06F17/10 ,  B05C11/00

CPC classification number: H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

Abstract: To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

Abstract translation: 为了选择用离子注入工具的离子注入光束扫描实际工件所使用的相对速度分布，模拟了虚拟工件的注入。 基于植入物轮廓和相对速度分布，跨虚拟工件计算剂量分布。 然后基于计算的剂量分布和用于计算剂量分布的相对速度分布来确定新的相对速度分布。 然后使用新的相对速度分布计算新的剂量分布。 确定新的相对速度分布，并且迭代地计算相应的新剂量分布，直到新的剂量分布满足一个或多个预定标准。 当新剂量分布满足一个或多个预定标准时，新的相对速度分布被存储为所选择的相对速度分布。

公开(公告)号：US20110089321A1

公开(公告)日：2011-04-21

申请号：US12948298

申请日：2010-11-17

Applicant: Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

Inventor： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

IPC: H01J49/00 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Abstract translation: 一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束 相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定 较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单个原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：US07888660B2

公开(公告)日：2011-02-15

申请号：US11341838

申请日：2006-01-27

Applicant: Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

Inventor： Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

IPC: G21K5/04

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。

公开(公告)号：US07888636B2

公开(公告)日：2011-02-15

申请号：US11933934

申请日：2007-11-01

Applicant: Bon Woong Koo ,  Jonathan Gerald England

Inventor： Bon Woong Koo ,  Jonathan Gerald England

IPC: H01J49/40

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/0225 ,  H01J2237/24485 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/31703

Abstract: Techniques for measuring energy contamination using time-of-flight (TOF) sensor are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for detecting energy contamination in an ion beam using time-of-flight comprising directing an ion beam towards an entrance of a sensor, wherein the ion beam may include charged particles and neutral particles, blocking the ion beam periodically from entering the sensor and allowing a pulse of the ion beam to enter the sensor periodically using a gate mechanism, separating the charged particles and the neutral particles of the ion beam pulse based at least in part upon different transit times over a distance caused by variations in at least one of mass and energy associated with the charged particles and the neutral particles, and detecting at least one of the charged particles and the neutral particles separately at a detector based at least in part upon the different transit times.

Abstract translation: 公开了使用飞行时间（TOF）传感器测量能量污染的技术。 在一个特定的示例性实施例中，技术可以被实现为使用飞行时间来检测离子束中的能量污染的方法，包括将离子束朝向传感器的入口引导，其中离子束可以包括带电粒子和中性 颗粒，阻止离子束周期性地进入传感器并且允许离子束的脉冲使用门机构周期性地进入传感器，至少部分地基于不同的转移分离带电粒子和离子束脉冲的中性粒子 在与带电粒子和中性粒子相关联的质量和能量中的至少一种的变化引起的一段距离上的时间，以及至少部分地基于不同的方式在检测器处分别检测带电粒子和中性粒子中的至少一个 过境时间

公开(公告)号：US20100084581A1

公开(公告)日：2010-04-08

申请号：US12244001

申请日：2008-10-02

Applicant: Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

Inventor： Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/047 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

Abstract translation: 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。

公开(公告)号：US07692164B2

公开(公告)日：2010-04-06

申请号：US11739314

申请日：2007-04-24

Applicant: Alfred M. Halling

Inventor： Alfred M. Halling

IPC: H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J2237/20228 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: Non uniform ion implantations in a pendulum type of ion implantation are mitigated by adjusting movement of a wafer according to a corresponding non uniform function. More particularly, a non uniform ion implantation function is obtained by measuring and/or modeling ion implantations. Then, movement of a wafer along a second non arcuate scan path is adjusted according to the non uniform ion implantation function to facilitate uniform ion implantations.

Abstract translation: 通过根据相应的非均匀功能调整晶片的移动来减轻摆式离子注入中的非均匀离子注入。 更具体地，通过测量和/或模拟离子注入获得非均匀的离子注入功能。 然后，根据非均匀的离子注入功能调整晶片沿着第二非弓形扫描路径的运动，以促进均匀的离子注入。

公开(公告)号：US20090272918A1

公开(公告)日：2009-11-05

申请号：US12431081

申请日：2009-04-28

Applicant: Shu Satoh

Inventor： Shu Satoh

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24564 ,  H01J2237/30405 ,  H01J2237/30455 ,  H01J2237/31703

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract translation: 离子注入系统和相关方法包括扫描器，其被配置为将铅笔形离子束扫描成带状离子束，以及梁弯曲元件，其构造成接收具有第一方向的带状离子束，并且弯曲带状离子束 沿第二个方向行驶。 所述系统还包括位于所述梁弯曲元件下游的终端站，其中所述端站被构造成接收沿所述第二方向传播的所述带状离子束，并且固定用于其注入的工件。 此外，该系统包括位于梁弯曲元件的出口处的束电流测量系统，其被配置为测量在束弯曲元件的出口处的带状离子束的束电流。

公开(公告)号：US07609003B2

公开(公告)日：2009-10-27

申请号：US11365719

申请日：2006-03-01

Applicant: Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

Inventor： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC: H01J7/24

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US20090230329A1

公开(公告)日：2009-09-17

申请号：US12126335

申请日：2008-05-23

Applicant: Cheng-Hui Shen

Inventor： Cheng-Hui Shen

IPC: H01J37/08

CPC classification number: H01J37/1474 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/15 ,  H01J2237/20214 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/265

Abstract: An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. Therefore a plurality of interlaced and not overlapped ion implantation scan lines are formed on the surface of the substrate, so the method can enhance the uniformity of the dose of the ion implantation in the substrate.

Abstract translation: 提供离子注入方法。 离子注入之前的方法是将衬底旋转一定角度，并且以垂直于扫描方向的方向和衬底的平面上的隔行间距移动离子束的扫描路径。 因此，在衬底的表面上形成多个交错且不重叠的离子注入扫描线，因此该方法可以增强衬底中离子注入的剂量的均匀性。