公开(公告)号：US06670261B2

公开(公告)日：2003-12-30

申请号：US09979717

申请日：2001-11-28

申请人： Shoji Akiyama ,  Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

发明人： Shoji Akiyama ,  Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

IPC分类号： H01L21425

CPC分类号： H01L21/324 ,  H01L21/02052 ,  H01L21/3225 ,  Y10S438/906

摘要： There is provided a manufacturing process for an annealed wafer capable of reducing boron contamination occurring while annealing is performed in a state where a wafer surface after cleaning is exposed to a gas in Ar atmosphere to suppress a change in resistivity due to an increase in a boron concentration in the vicinity of the wafer surface after annealing and manufacture an annealed wafer in which a difference in a boron concentration between a surface layer portion thereof and a bulk portion thereof is essentially not a problem even if a silicon wafer having a comparative low boron concentration (1×1016 atoms/cm3 or less) is used as the annealed wafer. The manufacturing process for an annealed wafer comprises: cleaning a silicon wafer; and loading the silicon wafer into a heat treatment furnace to heat-treat the silicon wafer in an Ar atmosphere, wherein an aqueous solution including hydrofluoric acid is used as a final cleaning liquid in the cleaning.

摘要翻译： 提供了一种用于退火晶片的制造方法，其能够在将清洁后的晶片表面暴露于Ar气氛中的气体的状态下进行退火的同时进行退火，以抑制由于硼的增加导致的电阻率变化 退火后的晶片表面附近的浓度，制造退火晶片，其中表面层部分和其主体部分之间的硼浓度差异基本上不成问题，即使具有比较低的硼浓度的硅晶片 （1×10 16原子/ cm 3以下）用作退火晶片。 退火晶片的制造方法包括：清洗硅晶片; 并将硅晶片加载到热处理炉中以在Ar气氛中对硅晶片进行加热处理，其中使用包含氢氟酸的水溶液作为清洗中的最终清洗液。

公开(公告)号：US06666915B2

公开(公告)日：2003-12-23

申请号：US10394927

申请日：2003-03-19

申请人： Charles Chiun-Chieh Yang ,  Darrell D. Watkins, Jr.

发明人： Charles Chiun-Chieh Yang ,  Darrell D. Watkins, Jr.

IPC分类号： C03B2300

CPC分类号： H01L21/3225

摘要： This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.

公开(公告)号：US20030164139A1

公开(公告)日：2003-09-04

申请号：US10333970

申请日：2003-01-24

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： According to the present invention, there are provided a method for producing a silicon single crystal wafer which contains oxygen induced defects by subjecting a silicon single crystal wafer containing interstitial oxygen to a heat treatment wherein the heat treatment includes at least a step of performing a heat treatment using a resistance-heating type heat treatment furnace and a step of performing a heat treatment using a rapid heating and rapid cooling apparatus, and a silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wafer which has a DZ layer of higher quality compared with a conventional wafer in a wafer surface layer part and has oxygen induced defects at a sufficient density in a bulk part and the silicon single crystal wafer.

摘要翻译： 根据本发明，提供了一种通过对含有间隙氧的硅单晶晶片进行热处理而含有氧诱发缺陷的硅单晶晶片的制造方法，其中，热处理至少包括进行热处理的步骤 使用电阻加热型热处理炉的处理以及使用快速加热和快速冷却装置进行热处理的步骤，以及通过该方法制造的硅单晶晶片。 可以提供一种制造硅单晶晶片的方法，其具有与晶片表面层部分中的常规晶片相比具有更高质量的DZ层，并且在体积部分中具有足够密度的氧诱发缺陷，并且硅单晶 晶圆。

公开(公告)号：US20030157814A1

公开(公告)日：2003-08-21

申请号：US10333771

申请日：2003-01-22

发明人： Makoto Iida ,  Masaro Tamatsuka

IPC分类号： H01L021/322 ,  H01L021/26 ,  H01L021/324 ,  H01L021/42 ,  H01L021/477

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is subjected to a high temperature heat treatment at 1100null C. to 1350null C. in an atmosphere of argon, hydrogen or a mixed gas thereof, a step of maintaining the wafer at a temperature lower than the treatment temperature of the high temperature heat treatment is conducted to allow growth of oxygen precipitation nuclei having such a size that the nuclei should be annihilated by the high temperature heat treatment to such a size that the nuclei should not be annihilated by the high temperature heat treatment, and then the high temperature heat treatment is performed. Thus, there are provided a nitrogen-doped annealed wafer with reducing variation of the BMD density after the annealing among silicon single crystal wafers sliced from various positions of the silicon single crystal without being affected by concentration of nitrogen doped in a silicon single crystal and a method for producing the same.

摘要翻译： 本发明提供了一种制造氮掺杂退火晶片的方法，其中在从掺杂有至少氮并且抛光的硅单晶切片的晶片在1100℃至1350℃进行高温热处理之前。 在氩气，氢气或其混合气体的气氛中，进行将晶片维持在低于高温热处理的处理温度的温度的步骤，以允许具有如下尺寸的氧沉淀核的生长：核应该 通过高温热处理而被消除，使得不能通过高温热处理来消除核的尺寸，然后进行高温热处理。 因此，提供了氮掺杂退火晶片，其在硅单晶的各个位置切片的硅单晶晶片退火之后具有降低的BMD密度的变化，而不受硅单晶中掺杂的氮的浓度的影响， 其制造方法

公开(公告)号：US20030148634A1

公开(公告)日：2003-08-07

申请号：US10357601

申请日：2003-02-04

申请人： Wacker Siltronic AG.

发明人： Robert Holzl ,  Christoph Seuring ,  Reinhold Wahlich ,  Wilfried Von Ammon

IPC分类号： C30B013/00 ,  H01L021/324 ,  H01L021/42 ,  H01L021/477

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225 ,  H01L21/324 ,  Y10T117/1088

摘要： A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality 1 [ Oi ]

公开(公告)号：US20030134492A1

公开(公告)日：2003-07-17

申请号：US10276767

申请日：2002-11-18

发明人： Wilfried Lerch ,  Jurgen Niess

IPC分类号： H01L021/20

CPC分类号： H01L21/67017 ,  C30B29/06 ,  C30B33/00 ,  H01L21/3225 ,  H01L21/67115 ,  Y10S438/928

摘要： The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber. According to the inventive method, a concentration and/or a density distribution of defects is controlled with at least one reactive component each depending on at least two process gases that differ in their composition. At least two of the process gases independently act upon at least two different surfaces of the substrate.

摘要翻译： 本发明涉及一种用于在处理室的热处理期间在衬底（优选半导体）的晶体或晶体结构中产生缺陷分布的方法。 根据本发明的方法，通过至少一种反应性成分来控制缺陷的浓度和/或密度分布，这取决于组成不同的至少两种工艺气体。 至少两个工艺气体独立地作用于衬底的至少两个不同的表面。

公开(公告)号：US06541117B1

公开(公告)日：2003-04-01

申请号：US09688090

申请日：2000-10-16

申请人： Tsuyoshi Ohtsuki

发明人： Tsuyoshi Ohtsuki

IPC分类号： B32B900

CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  H01L21/3221 ,  H01L21/3225

摘要： There is disclosed a silicon epitaxial wafer comprising an epitaxial layer formed on a silicon wafer wherein Erratic phenomenon does not occur in a MOS device fabricated on the silicon epitaxial wafer, a silicon epitaxial wafer having oxide dielectric breakdown voltage of 20 MV/cm or more, a silicon epitaxial wafer comprising an epitaxial layer formed on a silicon wafer wherein oxygen concentration at an interface between the epitaxial layer and the silicon wafer of the silicon epitaxial wafer is 1×1017 to 1×1018 atoms/cm3 or 5×1016 to 5×1017 atoms/cm3, a method for producing a silicon epitaxial wafer comprising subjecting a silicon wafer to heat treatment in a hydrogen atmosphere, and then growing an epitaxial layer on the silicon wafer wherein the initial oxygen concentration of the silicon wafer, the heat treatment temperature and the heat treatment time of the heat treatment are predetermined so that oxygen concentration at an interface between the epitaxial layer and the silicon wafer of the silicon epitaxial wafer may be 1×1017 to 1×1018 atoms/cm3 or 5×1016 to 5×1017 atoms/cm3. There is provided a silicon epitaxial wafer comprising an epitaxial layer formed on a silicon wafer wherein Erratic phenomenon does not occur in a MOS device and a method for producing it.

摘要翻译： 公开了一种硅外延晶片，其包括在硅晶片上形成的外延层，其中在硅外延晶片上制造的MOS器件中不发生错误现象，具有20MV / cm以上的氧化物介电击穿电压的硅外延晶片， 包括形成在硅晶片上的外延层的硅外延晶片，其中硅外延晶片的外延层和硅晶片之间的界面处的氧浓度为1×10 17至1×10 18原子/ cm 3或5×10 16至5×10 17原子/ cm 3， 制造硅外延晶片，包括在氢气氛中对硅晶片进行热处理，然后在硅晶片上生长外延层，其中硅晶片的初始氧浓度，热处理温度和热处理时间 处理是预定的，使得在外延层和硅之间的界面处的氧浓度w 硅外延晶片的一个可以是1×10 17至1×10 18原子/ cm 3或5×10 16至5×10 17原子/ cm 3。 提供了一种硅外延晶片，其包括形成在硅晶片上的外延层，其中在MOS器件中不发生错误现象及其制造方法。

公开(公告)号：US20030051656A1

公开(公告)日：2003-03-20

申请号：US09332745

申请日：1999-06-14

发明人： CHARLES CHIUN-CHIEH YANG ,  DARRELL D. WATKINS JR

IPC分类号： C30B001/00

CPC分类号： H01L21/3225

摘要： This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175null C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10null C./sec while (a) the temperature of the wafer is greater than about 1000null C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.

摘要翻译： 本发明涉及一种用于制备硅晶片的新方法，其包括其上沉积有外延层的表面。 在一个实施例中，外延层沉积在硅晶片的表面上。 晶片也被加热到至少约1175℃的温度。该热处理在外延沉积期间或之后开始。 在热处理之后，加热的晶片以至少约10℃/ sec的速率冷却一段时间，而（a）晶片的温度大于约1000℃，和（b） 晶片不与基座接触。 在该过程中，外延沉积，加热和冷却在相同的反应室中进行。

公开(公告)号：US20030044622A1

公开(公告)日：2003-03-06

申请号：US10235006

申请日：2002-09-04

发明人： Jea-Gun Park

IPC分类号： C30B001/00

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B33/00 ,  H01L21/3225 ,  Y10S117/911 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088 ,  Y10T428/12458 ,  Y10T428/12528 ,  Y10T428/21

摘要： A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere comprising ammonia (NH3) and argon (Ar) at temperatures below about 1200null C. Using such a rapid thermal annealing process, slip dislocation can be reduced in the device regions of the wafer, and silicon dioxide sublimation on the rapid thermal annealing chamber also can be reduced.

摘要翻译： 提供了具有受控的缺陷分布的硅晶片，其中具有从晶片表面向内的足够深度的裸露区域在晶片的主体区域中与高吸杂效应组合。 在硅晶片中，作为固有吸气部位的氧析出物显示垂直分布。 从晶片的顶表面到底表面的氧沉淀浓度分布包括在晶片的顶表面和底表面的第一和第二预定深度处的第一和第二峰，在晶片的顶表面和底表面之间的裸露区域 第一和第二峰，以及在第一和第二峰之间的对应于晶片的体区的凹区。 对于这样的氧沉淀浓度分布，在低于约1200℃的温度下，在包含氨（NH 3）和氩（Ar）的气体混合气体中将晶片暴露于快速热退火工艺。使用这种快速热退火工艺，滑动 可以在晶片的器件区域中减少位错，并且可以减少快速热退火室上的二氧化硅升华。

公开(公告)号：US20030022003A1

公开(公告)日：2003-01-30

申请号：US10217635

申请日：2002-08-13

发明人： Jea-gun Park

IPC分类号： C30B001/00

CPC分类号： C30B15/206 ,  C30B15/14 ,  C30B15/203 ,  C30B29/06 ,  C30B33/00 ,  H01L21/3225 ,  Y10S117/911 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088 ,  Y10T428/21

摘要： A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere containing nitrogen (N2) and argon (Ar) or N2 and hydrogen (H2), in a donor killing step during a wafering process.

摘要翻译： 提供了具有受控的缺陷分布的硅晶片，其中具有从晶片表面向内的足够深度的裸露区域在晶片的主体区域中与高吸杂效应组合。 在硅晶片中，作为固有吸气部位的氧析出物显示垂直分布。 从晶片的顶表面到底表面的氧沉淀浓度分布包括在晶片的顶表面和底表面的第一和第二预定深度处的第一和第二峰，在晶片的顶表面和底表面之间的裸露区域 第一和第二峰，以及在第一和第二峰之间的对应于晶片的体区的凹区。 对于这种氧沉淀物浓度分布，在晶片化过程中，在供体杀死步骤中，将晶片暴露于含氮（N 2）和氩（Ar）或N 2和氢（H 2）的气体混合气体中的快速热退火工艺 。