公开(公告)号：US2968530A

公开(公告)日：1961-01-17

申请号：US64720957

申请日：1957-03-20

申请人： UNION CARBIDE CORP

发明人： DANIEL FORGENG WILLIAM ,  GERBY RUSSELL W

IPC分类号： C01B21/082 ,  C04B35/591 ,  C04B35/597

CPC分类号： C01B21/0823 ,  C01P2002/72 ,  C04B35/591 ,  C04B35/597

公开(公告)号：US2406692A

公开(公告)日：1946-08-27

申请号：US44747042

申请日：1942-06-17

申请人： ALBI CHEMICAL CORP

发明人： GRINNELL JONES ,  WALTER JUDA

IPC分类号： C01B21/082 ,  C01B21/092

CPC分类号： C01B21/0923 ,  C01B21/082

公开(公告)号：US1570467A

公开(公告)日：1926-01-19

申请号：US70310424

申请日：1924-03-31

申请人： THOMAS EWAN

发明人： THOMAS EWAN

IPC分类号： C01B21/082 ,  C01B21/092 ,  C25B3/12

CPC分类号： C25B3/12 ,  C01B3/08 ,  C01B21/082 ,  C01B21/0926 ,  Y02E60/36

公开(公告)号：US12048132B2

公开(公告)日：2024-07-23

申请号：US17179332

申请日：2021-02-18

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  DREXEL UNIVERSITY

发明人： Yury Gogotsi ,  Kanit Hantanasirisakul ,  Chong Min Koo ,  Aamir Iqbal ,  Soon Man Hong ,  Seon Joon Kim ,  Seung Sang Hwang ,  Kyung Youl Baek ,  Albert Lee ,  Sangho Cho

IPC分类号： H05K9/00 ,  C01B21/082 ,  C23C16/30

CPC分类号： H05K9/0088 ,  C01B21/0828 ,  C23C16/30 ,  B32B2255/205 ,  C01P2004/04 ,  C01P2006/14 ,  C01P2006/40

摘要： In an aspect, the present disclosure provides a heat-treated transition metal carbonitride MXene film annealed at high temperatures and a polymer composite comprising the same. In another aspect, the present disclosure provides a method for producing a heat-treated transition metal carbonitride MXene film comprising: obtaining a MXene aqueous solution containing dispersed 2-dimensional (2D) MXenes through an acid etching process; filtering the obtained MXene aqueous solution through a vacuum filtration process to produce a free-standing film; and annealing the produced free-standing film at high temperatures to obtain a heat-treated transition metal carbonitride MXene film. In still another aspect, the present disclosure provides an electromagnetic interference (EMI) shielding method comprising: superposing a coating comprising a heat-treated transition metal carbonitride MXene film on at least one surface of an object in a contact or non-contact manner.

公开(公告)号：US11926528B2

公开(公告)日：2024-03-12

申请号：US18067480

申请日：2022-12-16

申请人： DICKINSON CORPORATION

发明人： Matthew Bishop ,  Abhay Thomas

IPC分类号： C01B32/184 ,  C01B21/064 ,  C01B21/082 ,  C01B32/05 ,  C01B32/186 ,  C01B32/196

CPC分类号： C01B32/184 ,  C01B21/064 ,  C01B21/0828 ,  C01B32/05 ,  C01B32/186 ,  C01B32/196 ,  C01B2204/22 ,  C01B2204/32 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2002/82 ,  C01P2002/88 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/40

摘要： Several variations of synthetic carbon materials are disclosed. The materials can assume a variety of properties, including high electrical conductivity. The materials also can have favorable structural and mechanical properties. They can form gas impenetrable barriers, form insulating structures, and can have unique optical properties.

公开(公告)号：US11844409B2

公开(公告)日：2023-12-19

申请号：US16980299

申请日：2019-04-09

申请人： LG CHEM, LTD.

发明人： Pilsung Jo ,  Jin Suk Song ,  Song Ho Jang ,  Ki Hwan Kim ,  Yong Chan Kim ,  Nansra Heo ,  Jeong Woo Shon

IPC分类号： G02B5/00 ,  B32B7/023 ,  B32B3/30 ,  B44F1/02 ,  B44F1/08 ,  G02B5/22 ,  B32B27/06 ,  A45D33/18 ,  B29C45/00 ,  C08J7/04 ,  A45D34/00 ,  A45D40/00 ,  B29C45/26 ,  B32B15/08 ,  C01B21/082 ,  B29K101/00 ,  C23C14/00 ,  B29C45/16 ,  B65D1/02

CPC分类号： A45D33/18 ,  A45D34/00 ,  A45D40/00 ,  B29C45/0001 ,  B29C45/26 ,  B32B3/30 ,  B32B7/023 ,  B32B15/08 ,  B32B27/06 ,  B44F1/02 ,  B44F1/08 ,  C01B21/0825 ,  C08J7/0423 ,  G02B5/003 ,  G02B5/223 ,  A45D2034/007 ,  A45D2040/0012 ,  A45D2200/053 ,  B29C45/1679 ,  B29K2101/00 ,  B29K2901/12 ,  B29K2995/002 ,  B32B2255/28 ,  B32B2307/4026 ,  B32B2307/416 ,  B32B2439/40 ,  B32B2451/00 ,  B65D1/0207 ,  C08J2367/02 ,  C23C14/0036

摘要： The present application relates to a decoration member including a substrate layer having a convex structure or a concave structure arranged two-dimensionally, and a method for preparing the decoration member.

公开(公告)号：US20230299340A1

公开(公告)日：2023-09-21

申请号：US18322206

申请日：2023-05-23

申请人： Samsung Electronics Co., Ltd. ,  Massachusetts Institute of Technology

发明人： Won Seok Chang ,  Zachary Hood ,  Jennifer Rupp ,  Lincoln Miara

IPC分类号： H01M10/0562 ,  H01M4/38 ,  H01M4/40 ,  C01G25/00 ,  C01B21/082 ,  H01M10/052

CPC分类号： H01M10/0562 ,  H01M4/382 ,  H01M4/405 ,  C01G25/006 ,  C01B21/0821 ,  H01M10/052 ,  C01P2002/72 ,  H01M2300/0094 ,  H01M2300/0071 ,  H01M2004/027

摘要： A component for a lithium battery including a first layer including a lithium garnet having a porosity of 0 percent to less than 25 percent, based on a total volume of the first layer; and a second layer on the first layer and having a porosity of 25 percent to 80 percent, based on a total volume of the second layer, wherein the second layer is on the first layer and the second layer has a composition that is different from a composition of the first layer.

公开(公告)号：US20230287586A1

公开(公告)日：2023-09-14

申请号：US17822569

申请日：2022-08-26

申请人： KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

发明人： Ahsanulhaq QURASHI ,  Ibrahim KHAN

IPC分类号： C25B11/091 ,  C01B21/082 ,  C25B1/04 ,  C25B11/00

CPC分类号： C25B11/091 ,  C01B21/0821 ,  C25B1/04 ,  C25B11/00 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/16

摘要： A GaON/ZnO photoelectrode involving a nanoarchitectured photocatalytic material deposited onto a surface of a conducting substrate, and the nanoarchitectured photocatalytic material containing gallium oxynitride nanoparticles interspersed in zinc oxide nanoparticles, as well as methods of preparing the GaON/ZnO photoelectrode. A method of using the GaON/ZnO photoelectrode for solar water electrolysis is also provided.

公开(公告)号：US20230066497A1

公开(公告)日：2023-03-02

申请号：US17978447

申请日：2022-11-01

申请人： Applied Materials, Inc.

发明人： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC分类号： C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

摘要： Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US20220392675A1

公开(公告)日：2022-12-08

申请号：US17825729

申请日：2022-05-26

申请人： CM Materials Inc.

发明人： Md Aminul Mehedi

IPC分类号： H01F1/147 ,  C01B21/06 ,  C01B21/082 ,  H01F1/20

摘要： Soft magnetic materials, and related techniques for manufacturing such soft magnetic materials, are disclosed herein. Such magnetic materials can be based on iron nitride, iron oxynitride, iron boronitride and/or iron carbonitiride. The techniques disclosed herein for manufacturing ferromagnetic particles can be used to control functional magnetic and electrical properties of the manufactured particles. Some techniques disclosed herein can be used to form a coating on a particle, with the coating having a thickness of 0.05 to 1.00 μm. These magnetic materials manufactured via one or more of the techniques disclosed herein can have both relatively high magnetic induction and relatively high electrical resistivity.