公开(公告)号：US20100182908A1

公开(公告)日：2010-07-22

申请号：US12663909

申请日：2008-06-12

Applicant: Young Min Kim ,  Chang Ho Lee

Inventor： Young Min Kim ,  Chang Ho Lee

IPC: H04J1/16 ,  H04N7/173

CPC classification number: H04N21/6125 ,  H04N21/23406 ,  H04N21/2402 ,  H04N21/40 ,  H04N21/44004

Abstract: Provided is a traffic control method of IPTV broadcast service that allows a broadcast server to transmit data in a maximum bandwidth. The broadcast server sets a maximum buffer amount. The broadcast server monitors a network state to transmit data in a maximum bandwidth allowed by a network. The broadcast server judges whether a buffer amount of transmitted data reaches a maximum buffer amount. When the buffer amount of transmitted data reaches the maximum buffer amount, the broadcast server controls a bandwidth depending on a reproduction speed of a set-top box (STB) to transmit data. When the buffer amount of transmitted data does not reach the maximum buffer amount, the broadcast server transmits data in a maximum bandwidth allowed by the network.

Abstract translation: 提供了允许广播服务器以最大带宽发送数据的IPTV广播服务的流量控制方法。 广播服务器设置最大缓冲量。 广播服务器监视网络状态以以网络允许的最大带宽传输数据。 广播服务器判断发送数据的缓冲量是否达到最大缓冲量。 当发送数据的缓冲量达到最大缓冲量时，广播服务器根据机顶盒（STB）的再现速度来控制带宽以发送数据。 当发送数据的缓冲量未达到最大缓冲量时，广播服务器以网络允许的最大带宽发送数据。

公开(公告)号：US07749803B2

公开(公告)日：2010-07-06

申请号：US12053900

申请日：2008-03-24

Applicant: Chang-Ho Lee ,  Jin-Baek Choi ,  Won-Jong Kim ,  Jong-Hyuk Lee ,  Young-Woo Song ,  Yong-Tak Kim ,  Yoon-Hyeung Cho ,  Byoung-Duk Lee ,  Min-Ho Oh ,  Sun-Young Lee ,  So-Young Lee

Inventor： Chang-Ho Lee ,  Jin-Baek Choi ,  Won-Jong Kim ,  Jong-Hyuk Lee ,  Young-Woo Song ,  Yong-Tak Kim ,  Yoon-Hyeung Cho ,  Byoung-Duk Lee ,  Min-Ho Oh ,  Sun-Young Lee ,  So-Young Lee

IPC: H01L51/40

Abstract: An organic light-emitting device including a transparent conducting oxide layer as a cathode and a method of manufacturing the organic light-emitting device. The organic light-emitting device includes an anode disposed on a substrate. An organic functional layer including at least an organic light-emitting layer is disposed on the anode. The transparent conducting oxide layer used as the cathode is disposed on the organic functional layer. The transparent conducting oxide layer cathode is formed by plasma-assisted thermal evaporation. A microcavity structure is not formed in the organic light-emitting device, thereby avoiding a luminance change and a color shift as a function of viewing angle.

公开(公告)号：US20100148871A1

公开(公告)日：2010-06-17

申请号：US12620462

申请日：2009-11-17

Applicant: Dong Ho Lee ,  Kyu Hwan An ,  Jeonghu Han ,  Chang-Ho Lee ,  Joy Laskar

Inventor： Dong Ho Lee ,  Kyu Hwan An ,  Jeonghu Han ,  Chang-Ho Lee ,  Joy Laskar

IPC: H03F3/45

CPC classification number: H03F3/45179 ,  H03F2203/45394 ,  H03F2203/45541

Abstract: Systems and methods for providing an adaptive bias circuit that may include a differential amplifier, low-pass filter, and common source amplifier or common emitter amplifier. The adaptive bias circuit may generate an adaptive bias output signal depending on input signal power level. As the input power level goes up, the adaptive bias circuit may increase the bias voltage or bias current of the adaptive bias output signal. A power amplifier (e.g., a differential amplifier) may be biased according to the adaptive bias output signal in order to reduce current consumption at low power operation levels.

Abstract translation: 用于提供可包括差分放大器，低通滤波器和公共源放大器或公共发射极放大器的自适应偏置电路的系统和方法。 自适应偏置电路可以根据输入信号功率电平产生自适应偏置输出信号。 随着输入功率电平上升，自适应偏置电路可以增加自适应偏置输出信号的偏置电压或偏置电流。 可以根据自适应偏置输出信号偏置功率放大器（例如，差分放大器），以便在低功率操作电平下减少电流消耗。

公开(公告)号：US07738841B2

公开(公告)日：2010-06-15

申请号：US11855950

申请日：2007-09-14

Applicant: Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

Inventor： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

IPC: H04B1/44

CPC classification number: H03K17/693 ,  H03K17/063 ,  H03K17/102 ,  H03K2017/066 ,  H03K2217/0018 ,  H04B1/48

Abstract: Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, −60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.

Abstract translation: 本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz，1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底切换的多层晶体管，并且在漏极和栅极之间附接外部电容器以阻挡来自发射路径的高功率信号以及在接收器路径处保持较低的插入损耗。 CMOS天线开关的示例性实施例可以在多频带（例如，900MHz，1.8GHz和2.1GHz）处提供38dBm P 0.1dB。 此外，根据本发明的示例性实施例，可以获得高达30dBm输入的-60dBc的二次和三次谐波性能。

公开(公告)号：US20100136736A1

公开(公告)日：2010-06-03

申请号：US12628215

申请日：2009-12-01

Applicant: Chang Ho LEE ,  Hyung Dong KANG ,  Hyun Ho LEE ,  Yong Hyun LEE ,  Seon Myung KIM

Inventor： Chang Ho LEE ,  Hyung Dong KANG ,  Hyun Ho LEE ,  Yong Hyun LEE ,  Seon Myung KIM

IPC: H01L31/18

CPC classification number: H01L31/075 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.

Abstract translation: 公开了一种制造薄膜型太阳能电池的方法，其能够通过减少非晶硅中存在的悬挂键合位置或SiH 2键合位置的数量来减少太阳能电池的劣化，这是由于成分气体的最佳含量比，最佳 在通过等离子体CVD法沉积非晶硅的I型半导体层的工艺期间的腔室压力或最佳衬底温度，所述方法包括在衬底上形成前电极层; 在前电极层上依次沉积P型，I型和N型半导体层; 以及在所述N型半导体层上形成后电极层，其中所述形成所述I型半导体层的工艺包括通过等离子体CVD法在满足上述条件中的至少一个条件的情况下形成非晶硅层， 例如，含硅气体与含氢气体的含有比例在1:7〜1:10的范围内; 腔室压力保持在2.0托和2.4托之间的范围内; 并且衬底温度保持在225℃和250℃之间的范围内。

公开(公告)号：USD615479S1

公开(公告)日：2010-05-11

申请号：US29352944

申请日：2009-12-30

Applicant: Chang Ho Lee

Designer： Chang Ho Lee

公开(公告)号：US07705929B2

公开(公告)日：2010-04-27

申请号：US11640308

申请日：2006-12-18

Applicant: Chang Ho Lee ,  Yon Kon Lee ,  Oh Sang Kwon

Inventor： Chang Ho Lee ,  Yon Kon Lee ,  Oh Sang Kwon

IPC: G02F1/1333

CPC classification number: G02F1/133608

Abstract: A liquid crystal display device includes a liquid crystal display panel, a plurality of lamps for irradiating light onto the liquid crystal display panel, a cover bottom that houses the plurality of lamps, an inverter printed circuit board having a first surface and a second surface opposite to the first surface with an insulation base layer between the first and second surfaces, wherein the second surface is adjacent to the cover bottom, a transformer on the first surface of the inverter printed circuit board, and a metal shielding pattern on the second surface of the inverter printed circuit board directly between the transformer and the cover bottom.

Abstract translation: 一种液晶显示装置，包括液晶显示面板，用于将光照射到液晶显示面板上的多个灯，容纳多个灯的盖底部，具有第一表面和第二表面的反相印刷电路板 在所述第一表面和所述第一表面和所述第二表面之间具有绝缘基底层，其中所述第二表面与所述盖底部相邻，所述逆变器印刷电路板的第一表面上的变压器和所述反相印刷电路板的第二表面上的金属屏蔽图案 逆变器印刷电路板直接在变压器和盖底之间。

公开(公告)号：US07605147B2

公开(公告)日：2009-10-20

申请号：US11455679

申请日：2006-06-20

Applicant: Dong-Gyu Cho ,  Jae-Hong Lim ,  Jae-Taeg Hwang ,  Woo-Young Cho ,  Hyun-Sook Jang ,  Chang-Ho Lee ,  Tae-Saeng Choi ,  Chung-Mi Kim ,  Yong-Zu Kim ,  Tae-Kyun Kim ,  Seung-Joo Cho ,  Gyoung-Won Kim ,  Jong-Ryoo Choi ,  Jeong-Min Kim ,  Kee-Yoon Roh

Inventor： Dong-Gyu Cho ,  Jae-Hong Lim ,  Jae-Taeg Hwang ,  Woo-Young Cho ,  Hyun-Sook Jang ,  Chang-Ho Lee ,  Tae-Saeng Choi ,  Chung-Mi Kim ,  Yong-Zu Kim ,  Tae-Kyun Kim ,  Seung-Joo Cho ,  Gyoung-Won Kim ,  Jong-Ryoo Choi ,  Jeong-Min Kim ,  Kee-Yoon Roh

IPC: C07F9/6561 ,  A61K31/675 ,  A61P31/20 ,  C07F9/6512 ,  C07F9/40 ,  C07F7/18

CPC classification number: C07H19/10 ,  C07F9/65616 ,  C07H19/20

Abstract: The present invention relates to an acyclic nucleoside phosphonate derivative represented by the following formula (1): in which represents single bond or double bond, R1, R2, R3, R7 and R8 are defined herein, Y represents —O—, —S—, —CH(Z)-, ═C(Z)-, —N(Z)-, ═N—, or —SiH(Z)-, wherein Z represents hydrogen, hydroxy or halogen, or represents C1-C7-alkyl, C1-C5-alkoxy, allyl, hydroxy-C1-C7-alkyl, C1-C7-aminoalkyl or phenyl, Q represents a group having the following formula: wherein X1, and X2 independently of one another represent hydrogen, amino, hydroxy or halogen, or represent C1-C7-alkyl, C1-C5-alkoxy, allyl, hydroxy-C1-C7-alkyl, phenyl or phenoxy each of which is optionally substituted by nitro or C1-C5-alkoxy, or represent C6-C10-arylthio which is optionally substituted by nitro, amino, C1-C6-alkyl or C1-C4-alkoxy, or represent C6-C12-arylamino, C1-C7-alkylamino, di(C1-C7-alkyl)amino, C3-C6-cycloalkylamino or a structure of wherein n denotes an integer of 1 or 2 and Y1 represents O, CH2 or N—R (R represents C1-C7-alkyl or C6-C12-aryl), which is useful as an antiviral agent (particularly, against hepatitis B virus), pharmaceutically acceptable salts, stereoisomers, and a process for the preparation thereof.

Abstract translation: 本发明涉及由下式（1）表示的无环核苷膦酸酯衍生物：其中表示单键或双键，R1，R2，R3，R7和R8如本文所定义，Y表示 - O，-S - ， - CH（Z） - ， - C（Z） - ， - N（Z） - ， - -N-或-SiH（Z） - ，其中Z表示氢，羟基或卤素，或 表示C 1 -C 7 - 烷基，C 1 -C 5 - 烷氧基，烯丙基，羟基-C 1 -C 7 - 烷基，C 1 -C 7 - 氨基烷基或苯基，Q表示具有下式的基团：其中X 1和X 2彼此独立地表示 氢，氨基，羟基或卤素，或表示任选被硝基或C 1 -C 5烷氧基取代的C 1 -C 7 - 烷基，C 1 -C 5 - 烷氧基，烯丙基，羟基-C 1 -C 7 - 烷基，苯基或苯氧基， 或表示任选被硝基，氨基，C 1 -C 6 - 烷基或C 1 -C 4 - 烷氧基取代的C 6 -C 10 - 芳硫基，或代表 C 1 -C 12 - 芳基氨基，C 1 -C 7 - 烷基氨基，二（C 1 -C 7 - 烷基）氨基，C 3 -C 6环烷基氨基或其中n表示1或2的整数，Y 1表示O，CH 2或NR（ R表示可用作抗病毒剂（特别是针对乙型肝炎病毒）的药学上可接受的盐，立体异构体及其制备方法的C 1 -C 7 - 烷基或C 6 -C 12 - 芳基）。

公开(公告)号：US07592629B2

公开(公告)日：2009-09-22

申请号：US11544006

申请日：2006-10-06

Applicant: Chang Ho Lee ,  Sun Hwan Kong

Inventor： Chang Ho Lee ,  Sun Hwan Kong

IPC: H01L31/12 ,  H01L31/256

CPC classification number: C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007

Abstract: A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by primary nitradation and HCl treatment and a gallium nitride film is grown thereon by secondary nitradation. The gallium nitride thin film on sapphire substrate comprises an etching trench structure formed on a sapphire substrate, wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies Equation 1 below, and corresponds to or is located above a function graph drawn when Y0 is 6.23±1.15, A is 70.04 ±1.92, and T is 1.59±0.12: Y=Y0+A·e−(X−1)/T,  [Equation 1] where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y0, A, and T are positive numbers.

Abstract translation: 减少弯曲变形的蓝宝石衬底上的氮化镓薄膜及其制造方法。 通过初步氮化和HCl处理在蓝宝石衬底上形成蚀刻沟槽结构，并通过二次氮化在其上生长氮化镓膜。 蓝宝石衬底上的氮化镓薄膜包括形成在蓝宝石衬底上的蚀刻沟槽结构，其中根据氮化镓膜的厚度X的曲率半径Y的函数图满足下面的等式1，并且对应于或位于上面 当Y0为6.23±1.15时，A为70.04±1.92，T为1.59±0.12：<？在线公式描述=“在线公式”end =“lead”？> Y = Y0 + Ae-（X-1）/ T，[等式1] <？in-line-formula description =“In-line formula”end =“tail”？>其中Y是曲率半径m，X是 氮化镓膜，Y0，A，T为正数。

公开(公告)号：US07582366B2

公开(公告)日：2009-09-01

申请号：US11376323

申请日：2006-03-16

Applicant: Seok-Hwan Hwang ,  Young-Kook Kim ,  Chang-Ho Lee ,  Seok-Jong Lee ,  Seung-Gak Yang ,  Hee-Yeon Kim ,  Jung-Han Shin

Inventor： Seok-Hwan Hwang ,  Young-Kook Kim ,  Chang-Ho Lee ,  Seok-Jong Lee ,  Seung-Gak Yang ,  Hee-Yeon Kim ,  Jung-Han Shin

IPC: H01L51/54 ,  C07D213/00 ,  C07D403/00

CPC classification number: H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0081 ,  H01L51/5048 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2251/308 ,  Y10S428/917

Abstract: A difluoropyridine-based compound includes at least one difluoropyridine group in its molecule. The difluoropyridine-based compound may be used as an electron injection material, an electron transport material, or a hole blocking material in full-color fluorescent or phosphorescent devices. The difluoropyridine-based compound has good electrical characteristics and a high charge transport capability. The difluoropyridine-based compound may be used to produce an organic electroluminescent device with high efficiency, low voltage, improved brightness, and a long life expectancy.

Abstract translation: 基于二氟吡啶的化合物在其分子中包括至少一个二氟吡啶基团。 二氟吡啶类化合物可以用作全色荧光或磷光装置中的电子注入材料，电子传输材料或空穴阻挡材料。 二氟吡啶类化合物具有良好的电特性和较高的电荷传输能力。 可以使用基于二氟吡啶的化合物来制备具有高效率，低电压，改善亮度和长寿命的有机电致发光器件。