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    Deposition of Metal Films Using Beta-Hydrogen Free Precursors
    105.
    发明申请
    Deposition of Metal Films Using Beta-Hydrogen Free Precursors 有权
    使用不含氢的前体沉积金属膜

    公开(公告)号：US20170016113A1

    公开(公告)日：2017-01-19

    申请号：US15210352

    申请日：2016-07-14

    Applicant: Applied Materials, Inc.

    Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

    IPC: C23C16/455

    CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

    Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

    Abstract translation: 通过将基底表面暴露于第一前体和反应物来沉积含金属膜的方法，其中第一前体和反应物中的一种或多种包含具有通式M（XR 3）2， M（XR3）3，M（XR3）4，M（XR3）5和M（XR3）6，其中M选自Al，Ti，Ta，Zr，La，Hf，Ce，Zn，Cr ，Sn，V及其组合，每个X是C，Si和Ge中的一个或多个，并且每个R独立地是甲基或乙基，并且基本上不包含β-H。

    Methods Of Etching Films Comprising Transition Metals
    107.
    发明申请
    Methods Of Etching Films Comprising Transition Metals 审中-公开
    包含过渡金属的蚀刻膜的方法

    公开(公告)号：US20160293449A1

    公开(公告)日：2016-10-06

    申请号：US15177726

    申请日：2016-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

    IPC: H01L21/3213 ,  C23F1/12 ,  H01J37/32

    CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

    Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

    Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法。 某些方法包括激活包含至少一种过渡金属的基底表面，其中基底表面的活化包括将基底表面暴露于加热，等离子体，氧化环境或卤化物转移剂以提供活化的基底表面; 以及将活化的底物表面暴露于包含路易斯碱或pi酸的试剂中，以提供包含一个或多个与试剂配位的一个或多个配体配位的过渡金属原子的气相配位络合物。 某些其它方法提供了选自多层衬底的选择性蚀刻，所述多层衬底包括Co层，Cu层和Ni层中的两层或多层。

    Selectively etching metals and metal nitrides conformally
    108.
    发明授权
    Selectively etching metals and metal nitrides conformally 有权
    选择性地蚀刻金属和金属氮化物

    公开(公告)号：US09449843B1

    公开(公告)日：2016-09-20

    申请号：US14734222

    申请日：2015-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

    IPC: H01L21/3213

    CPC classification number: H01L21/32135 ,  C23F1/12

    Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

    Abstract translation: 描述了从衬底的表面选择性地蚀刻金属和金属氮化物的方法。 蚀刻相对于诸如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅的含硅层选择性地去除金属和金属氮化物。 蚀刻通过包括产生薄的均匀金属氧化物的氧化操作以保形方式去除材料。 然后通过在基板处理区域中将金属氧化物暴露于金属卤素前体而除去薄的均匀金属氧化物。 金属氧化物可以被去除完成，并且一旦去除均匀的金属氧化物层就可能停止蚀刻。 本文所述的蚀刻可用于在高纵横比特征上均匀地修整材料，该特征通常在与间隙内的深度相比间隙开口附近显示更高的蚀刻速率。

    Oxide and metal removal
    109.
    发明授权
    Oxide and metal removal 有权
    氧化物和金属去除

    公开(公告)号：US09309598B2

    公开(公告)日：2016-04-12

    申请号：US14288696

    申请日：2014-05-28

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

    IPC: C03C15/00 ,  C23F1/12 ,  H01J37/32 ,  H01L21/3213

    CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

    Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

    Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

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