公开(公告)号：US20080179424A1

公开(公告)日：2008-07-31

申请号：US12013083

申请日：2008-01-11

Applicant: David Cheung

Inventor： David Cheung

IPC: A61L9/04 ,  B05B17/00

CPC classification number: A61L9/03

Abstract: A disposable air freshener configured to be connected to a USB port of a computer or computer peripheral device. In one embodiment, the disposable air freshener comprises a casing fabricated from a plurality of sections that have generally the same shape. At least one of these sections is configured as scented cardboard. The disposable air freshener has a printed circuit board and a heating element electrically connected to the printed circuit board. A portion of the printed circuit board extends from the casing and is configured to be inserted into a USB port so that electrical power can be applied to the printed circuit board. The heating element generates heat when it receives electrical power from the printed circuit board. Thus, when electrical power is applied to the printed circuit board, the heating element generates heat which causes the scented cardboard to emit a pleasant scent or aroma. The casing of the air freshener can be configured to have almost any geometric shape, e.g. pine tree, hamburger, chocolate bar, etc.

Abstract translation: 配置为连接到计算机或计算机外围设备的USB端口的一次性空气清新器。 在一个实施方案中，一次性空气清新剂包括由具有大致相同形状的多个部分制成的壳体。 这些部分中的至少一个被配置为气味纸板。 一次性空气清新器具有电连接到印刷电路板的印刷电路板和加热元件。 印刷电路板的一部分从壳体延伸并且被配置成插入USB端口，使得电力可以施加到印刷电路板。 当加热元件从印刷电路板接收电力时产生热量。 因此，当对印刷电路板施加电力时，加热元件产生热量，这导致香味纸板发出愉快的香味或香味。 空气清新剂的外壳可以构造成具有几乎任何几何形状，例如， 松树，汉堡包，巧克力棒等

公开(公告)号：US20080156264A1

公开(公告)日：2008-07-03

申请号：US11616324

申请日：2006-12-27

Applicant: James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

Inventor： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC: C23C16/00

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32651 ,  H01J2237/335

Abstract: Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

Abstract translation: 提供了用于灰化工件的等离子体发生器装置的实施例。 该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。 容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。 气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。 射频发生器耦合到线圈。

公开(公告)号：US20060242475A1

公开(公告)日：2006-10-26

申请号：US11093743

申请日：2005-03-30

Applicant: Sumeet Sandhu ,  David Cheung

Inventor： Sumeet Sandhu ,  David Cheung

IPC: G06F11/00

CPC classification number: H03M13/27

Abstract: An interleaver and scheme for interleaving in which highly correlated bits are maximally separated. The scheme involves interleaving a set of bits to be delivered to a modulation system that utilizes a quantity of N carrier frequencies. A first block of N consecutive bits is assigned to each of N bins, on a one-bit-per-one-bin basis. The aforementioned assignment proceeds in a particular sequence. A second block of N consecutive bits is assigned to each of the N bins, on a one-bit-per-one-bin basis. The second block is assigned in the same sequence the first block was assigned. The second block is consecutive to the first block.

公开(公告)号：US07023092B2

公开(公告)日：2006-04-04

申请号：US10835171

申请日：2004-04-29

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

公开(公告)号：US06930061B2

公开(公告)日：2005-08-16

申请号：US10648616

申请日：2003-08-26

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

Abstract translation: 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3 3，二甲基硅烷，（CH 3 3）2， 或者1,1,3,3-四甲基二硅氧烷，（CH 3 3）2 -SiH-O-SiH - （CH 3 3）2 N 2和一氧化二氮N 2 O，在约10W至约150W的恒定RF功率水平 ，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率电平。

公开(公告)号：US20050152881A1

公开(公告)日：2005-07-14

申请号：US10793976

申请日：2004-03-05

Applicant: C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

Inventor： C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

IPC: A61K35/34 ,  A61K38/17 ,  A61K45/00 ,  A61L27/36 ,  A61L27/38 ,  A61L27/48 ,  C12N5/08

CPC classification number: A61L27/48 ,  A61L27/3604 ,  A61L27/3608 ,  A61L27/3683

Abstract: The present invention is directed to a composition comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. Also disclosed is a tissue graft or implant comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. The composition and/or tissue graft or implant of the invention is usable in combination with seeded cells, a tissue growth factor, and/or a chemotactic agent to attract a desired cell.

Abstract translation: 本发明涉及一种包含适合于植入人体的基质的组合物，其包含已经与水性载体组合并且以预定形状干燥的脱脂，切碎的同种异体人肌肉组织。 还公开了一种组织移植物或植入物，其包含适合于植入人体的基质，其包含已经与水性载体组合并且以预定形状干燥的脱脂，切碎的同种异体人类肌肉组织。 本发明的组合物和/或组织移植物或植入物可与接种的细胞，组织生长因子和/或趋化剂组合以吸引期望的细胞。

公开(公告)号：US20050152880A1

公开(公告)日：2005-07-14

申请号：US10754310

申请日：2004-01-09

Applicant: C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

Inventor： C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

IPC: A61K38/17 ,  A61K45/00 ,  A61L27/36 ,  A61L27/48 ,  C12N5/08

CPC classification number: A61L27/3683 ,  A61L27/3604 ,  A61L27/3608 ,  A61L27/48

Abstract: The present invention is directed to an intermediate composition for producing a muscle tissue matrix suitable for implantation in humans, comprising shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier, preferably a biocompatible acid solution, to form a muscle tissue slurry having a viscosity within the range of 1 centistoke to 20,000 centistokes measured at 25° C. In another aspect, the present invention is directed to a tissue implant comprising a human muscle tissue matrix.

Abstract translation: 本发明涉及一种用于生产适合于植入人体的肌肉组织基质的中间组合物，其包含与含水载体（优选生物相容性酸溶液）组合的切碎的同种异体人肌肉组织，以形成具有 在25℃下测量的粘度范围为1厘沲至20,000厘沲。另一方面，本发明涉及包含人肌肉组织基质的组织植入物。

公开(公告)号：US20050059264A1

公开(公告)日：2005-03-17

申请号：US10958772

申请日：2004-10-05

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert Mandal

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06800571B2

公开(公告)日：2004-10-05

申请号：US10322212

申请日：2002-12-17

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC: H01L2131

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06770556B2

公开(公告)日：2004-08-03

申请号：US10301019

申请日：2002-11-21

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L214763

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。