公开(公告)号：US07688946B2

公开(公告)日：2010-03-30

申请号：US11666368

申请日：2005-10-24

申请人： Francois Rieutord ,  Hubert Moriceau ,  Benoit Bataillou

发明人： Francois Rieutord ,  Hubert Moriceau ,  Benoit Bataillou

IPC分类号： G01N23/20

CPC分类号： G01N23/20 ,  G01N19/04

摘要： The adhesion between two layers, in particular two thin layers of a microelectronic device, is a data item of importance. It was found that the closure ratio of the interface could be used, in non-destructive manner, to determine a measurement of bond energy. A method and a device using a magnitude characteristic of this length are described, in particular using low incidence X-ray reflection and electronic density at the interface.

摘要翻译： 两层之间的粘附，特别是微电子器件的两个薄层，是重要的数据项。 已经发现界面的封闭比可以以非破坏性方式用于确定键能的测量。 具体地说，使用该长度的幅度特性的方法和装置，特别是在界面处使用低入射X射线反射和电子密度。

公开(公告)号：US20100075461A1

公开(公告)日：2010-03-25

申请号：US12564597

申请日：2009-09-22

申请人： Laurent Clavelier ,  Chrystel Deguet ,  Patrick Leduc ,  Hubert Moriceau

发明人： Laurent Clavelier ,  Chrystel Deguet ,  Patrick Leduc ,  Hubert Moriceau

IPC分类号： H01L21/50

CPC分类号： H01L21/7813 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for making a stack of at least two stages of circuits, each stage comprising a substrate and at least one component (10, 20) and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage comprising:a) ionic implantation (29) in the substrate (2, 25) of the stage to be transferred through at least part of the components (10, 20), so as to form a weakened zone (30),b) formation of metallic connections of said components,c) transfer and assembly of some of this substrate onto the previous stage,d) a step to thin the transferred part of said substrate by fracture along the weakened zone (30).

摘要翻译： 本发明涉及一种用于制造至少两级电路的堆叠的方法，每个级包括衬底和形成在该衬底中或之上的至少一个部件（10,20）和金属连接，所述组件的阶段为 转移到前一阶段，包括：a）通过至少部分组分（10,20）转移的阶段的衬底（2,25）中的离子注入（29），以形成弱化区（30 ），b）形成所述部件的金属连接，c）将所述基材中的一些转移和组装到前一阶段，d）通过沿弱化区（30）的断裂来稀释所述基板的转移部分的步骤。

公开(公告)号：US07579259B2

公开(公告)日：2009-08-25

申请号：US12158191

申请日：2006-12-04

申请人： Frank Fournel ,  Hubert Moriceau

发明人： Frank Fournel ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  C30B25/18 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02521 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/30604

摘要： Method to produce a structure consisting of depositing a material by columnar epitaxy on a crystalline face of a substrate (2), of continuing so that the columns (4) give a continuous layer (5). The surface is provided with a period array of bumps (3) on a nanometric scale, each bump (3) having a support zone (35) and being obtained from an array of crystalline defects and/or strain fields created within a crystalline region (16) located in the vicinity of a bonding interface (15) between two crystalline elements (11, 12) whose crystalline lattices have a twist and/or tilt angle and/or have interfacial lattice mismatch, able to condition the period (38) of the array of bumps (3). The period (38) of the array, the height (36) of the bumps and the size of their support zone (35) being adjusted so that the continuous layer (40) has a critical thickness that is greater than that obtained using epitaxy without the bumps.

摘要翻译： 一种制造结构的方法，该结构包括通过柱状外延在衬底（2）的结晶面上沉积材料，继续使得柱（4）产生连续层（5）。 该表面设有一个具有纳米尺度的凸块（3）的周期阵列，每个凸块（3）具有一个支撑区（35），并由结晶区域内产生的晶体缺陷和/或应变场的阵列获得（ 16）位于结晶界面（15）附近，其结晶晶格具有扭转和/或倾斜角和/或具有界面晶格失配的两个晶体元件（11,12）之间，能够调节 凸块阵列（3）。 阵列的周期（38），凸块的高度（36）和它们的支撑区域（35）的尺寸被调整，使得连续层（40）的临界厚度大于没有 颠簸

公开(公告)号：US07435690B2

公开(公告)日：2008-10-14

申请号：US11090426

申请日：2005-03-25

申请人： Hubert Moriceau ,  Pierre Mur

发明人： Hubert Moriceau ,  Pierre Mur

IPC分类号： H01L21/31

CPC分类号： H01L21/31658 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

摘要： Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: a) at least one additional layer of thickness hy and of overall formula Si1-yGey, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si1-xGex; and b) the high-temperature oxidation of the said additional layer of overall formula Si1-yGey is carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO2. Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2 layer using the method described above.

摘要翻译： 通过高分子氧化制备二氧化硅层的方法，其中x x大于0且小于或等于0的式Si 1-x N x X x 如图1所示，所述方法包括以下连续步骤：a）至少一个附加层厚度h Y y和整体式Si 1-y Ge y / SUB>，其中y大于0且小于x，沉积在所述式Si 1-x Ge x x的衬底上; 和b）进行总体式为Si 1-y Ge y的所述附加层的高温氧化，由此所述附加层完全或部分转化 进入一层氧化硅SiO 2。 制备光学或电子部件的方法，包括使用上述方法制备SiO 2层的至少一个步骤。

公开(公告)号：US20080079123A1

公开(公告)日：2008-04-03

申请号：US11857130

申请日：2007-09-18

申请人： Marek Kostrzewa ,  Hubert Moriceau ,  Marc Zussy

发明人： Marek Kostrzewa ,  Hubert Moriceau ,  Marc Zussy

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/76254 ,  B81C1/00357

摘要： A method of fabricating a mixed microtechnology structure includes providing a provisional substrate including a sacrificial layer on which is formed a mixed layer including at least first patterns of a first material and second patterns of a second material different from the first material, where the first and second patterns reside adjacent the sacrificial layer. The sacrificial layer is removed exposing a mixed surface of the mixed layer, the mixed surface including portions of the first patterns and portions of the second patterns. A continuous is formed covering layer of a third material on the mixed surface by direct bonding.

摘要翻译： 制造混合微技术结构的方法包括提供包括牺牲层的临时衬底，其上形成有至少包括第一材料的第一图案和不同于第一材料的第二材料的第二图案的混合层，其中第一和 第二图案位于牺牲层附近。 消除牺牲层暴露混合层的混合表面，混合表面包括第一图案的部分和第二图案的部分。 连续地通过直接粘合在混合表面上形成第三材料的覆盖层。

公开(公告)号：US20070284660A1

公开(公告)日：2007-12-13

申请号：US11746297

申请日：2007-05-09

申请人： Chrystel Deguet ,  Takeshi Akatsu ,  Hubert Moriceau ,  Thomas Signamarcheix ,  Loic Sanchez

发明人： Chrystel Deguet ,  Takeshi Akatsu ,  Hubert Moriceau ,  Thomas Signamarcheix ,  Loic Sanchez

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/76254

摘要： A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.

摘要翻译： 一种通过提供半导体衬底或包括外延半导体层作为源极衬底的衬底来制造绝缘体上半导体晶片的方法，将源极衬底附接到手柄衬底以形成源极手柄组件，并以预定的分裂分离源极衬底 区域设置在源极基底内并基本上平行于其主表面，以从源手柄组件移除一层，从而形成绝缘体上半导体晶片。 可以在源极基板上设置扩散阻挡层，特别是氧扩散阻挡层。 此外，本发明涉及通过该方法制造的相应的绝缘体上半导体晶片。

公开(公告)号：US07264996B2

公开(公告)日：2007-09-04

申请号：US10947134

申请日：2004-09-23

申请人： Hubert Moriceau ,  Frank Fournel ,  Bernard Aspar

发明人： Hubert Moriceau ,  Frank Fournel ,  Bernard Aspar

IPC分类号： H01L21/44 ,  H01L21/30

CPC分类号： B32B43/006 ,  H01L21/2007 ,  H01L21/76254

摘要： This invention relates to a method for separating at least two wafers (1, 2) bonded together to form a stacked structure. At least one bending force is applied to all or part of the stacked structure to separate the stacked structure into two parts along a required separation plane.Application particularly for producing a thin semiconducting layer.

摘要翻译： 本发明涉及一种用于分离至少两个结合在一起以形成堆叠结构的晶片（1,2）的方法。 至少一个弯曲力施加到堆叠结构的全部或部分，以将堆叠结构沿所需的分离平面分离成两部分。 特别用于生产薄的半导体层的应用。

公开(公告)号：US07229897B2

公开(公告)日：2007-06-12

申请号：US10450528

申请日：2001-12-27

申请人： Franck Fournel ,  Hubert Moriceau ,  Marc Zussy ,  Noel Magnea

发明人： Franck Fournel ,  Hubert Moriceau ,  Marc Zussy ,  Noel Magnea

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  H01L21/76251

摘要： Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.

摘要翻译： 通过从相同的初始结构中分离出至少两个结晶部分来制造层叠结构的方法，每个结晶部分具有通过与初始结构的参考晶面具有倾斜角度的分离产生的一个面。 结构由结晶部分形成，每个结构具有相对于相应结晶部分的产生面的倾斜角具有受控倾斜角的待组装面。 结构被组装，同时控制它们在界面平面中相对于初始结构内的各结晶部分的相对位置旋转的相对位置，以在结构之间的界面处获得受控的所得到的倾斜角。 该方法可以特别在微电子学，光学和光电子学中得到应用。

公开(公告)号：US20070020895A1

公开(公告)日：2007-01-25

申请号：US10558621

申请日：2004-06-03

申请人： Hubert Moriceau ,  Chrystelle Lagahe ,  Benoit Bataillou

发明人： Hubert Moriceau ,  Chrystelle Lagahe ,  Benoit Bataillou

IPC分类号： H01L21/04

CPC分类号： H01L21/76254

摘要： The invention relates to a process for obtaining a thin layer made of a first material on a substrate made of a second material called the final substrate, including the following steps: bonding a thick layer of a first material on one of its main faces on the final substrate at an interface, implantation of gaseous species in the thick layer of first material to create a weakened zone delimiting said thin layer between the interface and the weakened zone, deposit a layer of third material called the self-supporting layer on the thick layer made of first material, fracture within the structure composed of the final substrate, the thick layer of first material and the layer of third material, at the weakened zone to supply the substrate supporting said thin layer.

摘要翻译： 本发明涉及一种获得由第二材料制成的基板上由第一材料制成的薄层的方法，所述第二材料被称为最终基板，包括以下步骤：将第一材料的厚层在其主面之一 在界面处的最终底物，在第一材料的厚层中注入气态物质以产生限定界面和弱化区之间的所述薄层的弱化区，在厚层上沉积称为自支撑层的第三材料层 由第一材料制成，在由最终基底构成的结构内的断裂，第一材料的厚层和第三材料层在弱化区域处供应支撑所述薄层的基板。

公开(公告)号：US07041227B2

公开(公告)日：2006-05-09

申请号：US10398630

申请日：2001-10-05

申请人： Franck Fournel ,  Hubert Moriceau ,  Noël Magnea

发明人： Franck Fournel ,  Hubert Moriceau ,  Noël Magnea

IPC分类号： H01L21/00

CPC分类号： H01L21/306 ,  H01L21/187

摘要： A process for permitting defects or stresses in a structure to be revealed, including (a) securing by molecular bonding of a face of a first element containing crystalline material with a face of a second element containing crystalline material, so that the faces have offset crystalline lattices, the securing causing the formation of a lattice of crystalline defects and/or stress fields in a crystalline zone next to the securing interface, and (b) reducing the thickness of one of the elements until at least a thin film is obtained which adheres to the other element, along the securing interface to form the structure, the thickness of the thin film being such that its free face does not reveal the crystalline defect lattice and/or the stress fields, but allowing to perform (c) treatment of the thin film resulting in that its free face reveals the crystalline defect lattice and/or the stress fields.

摘要翻译： 一种用于允许揭示结构中的缺陷或应力的方法，包括（a）通过包含结晶材料的第一元素的表面与包含结晶材料的第二元素的表面的分子结合来确保所述表面具有偏移的结晶 晶格，固定导致在紧固界面附近的结晶区域中形成结晶缺陷和/或应力场的晶格，和（b）减小其中一个元件的厚度，直到获得至少一个粘附的薄膜 到另一个元件，沿着固定界面形成结构，薄膜的厚度使得其自由面不显露结晶缺陷晶格和/或应力场，但允许执行（c）处理 导致其自由面露出结晶缺陷晶格和/或应力场。