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    Adaptive Recipe Selector
    102.
    发明申请
    Adaptive Recipe Selector 有权
    自适应配方选择器

    公开(公告)号：US20120252141A1

    公开(公告)日：2012-10-04

    申请号：US13073237

    申请日：2011-03-28

    Applicant: Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

    Inventor： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

    IPC: H01L21/66

    CPC classification number: H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

    Abstract translation: 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

    Method and system for controlling radical distribution
    103.
    发明授权
    Method and system for controlling radical distribution 有权
    控制激进分布的方法和系统

    公开(公告)号：US08038834B2

    公开(公告)日：2011-10-18

    申请号：US12754662

    申请日：2010-04-06

    Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

    Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

    IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

    CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

    Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的基板的基板保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

    DC and RF hybrid processing system
    104.
    发明授权
    DC and RF hybrid processing system 有权
    DC和RF混合处理系统

    公开(公告)号：US07993937B2

    公开(公告)日：2011-08-09

    申请号：US12887576

    申请日：2010-09-22

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H01L21/00 ,  H01L21/66 ,  G01R31/26

    CPC classification number: H01J37/32027 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

    Abstract: The invention can provide apparatus and methods for processing substrates and/or wafers in real-time using at least one Direct Current (DC)/Radio Frequency (RF) Hybrid (DC/RFH) processing system and associated Direct Current/Radio Frequency Hybrid (DC/RFH) procedures and DC/RFH process parameters and/or DC/RFH models.

    Abstract translation: 本发明可以提供使用至少一个直流（DC）/射频（RF）混合（DC / RFH）处理系统和相关联的直流/射频混合（DC / RFH）处理系统来实时处理衬底和/或晶片的装置和方法 DC / RFH）程序和DC / RFH过程参数和/或DC / RFH模型。

    Real-time parameter tuning for etch processes
    106.
    发明授权
    Real-time parameter tuning for etch processes 有权
    蚀刻工艺的实时参数调整

    公开(公告)号：US07801635B2

    公开(公告)日：2010-09-21

    申请号：US11668537

    申请日：2007-01-30

    Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    IPC: G06F19/00

    CPC classification number: G05B19/41865 ,  G05B2219/32097 ,  G05B2219/45031 ,  G05B2219/45212 ,  Y02P90/20 ,  Y02P90/86

    Abstract: The invention can provide a method of etch processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer data to create, modify, and/or use etch recipe data, etch profile data, and/or etch model data. In addition, RTPT procedures can use real-time wafer data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

    Abstract translation: 本发明可以提供使用实时参数调整（RTPT）过程来蚀刻处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息 ，或其任何组合。 RTPT程序可以使用实时晶片数据来创建，修改和/或使用蚀刻配方数据，蚀刻轮廓数据和/或蚀刻模型数据。 此外，RTPT程序可以使用实时晶片数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

    Multi-plasma neutral beam source and method of operating
    107.
    发明授权
    Multi-plasma neutral beam source and method of operating 有权
    多等离子体中性束源及其操作方法

    公开(公告)号：US07732759B2

    公开(公告)日：2010-06-08

    申请号：US12126456

    申请日：2008-05-23

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H05H3/06 ,  H05H3/00

    CPC classification number: H05H3/02 ,  H01J37/32357 ,  H01J37/32422

    Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

    Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括被配置为将电子从第一等离子体区域加速到第二等离子体区域中的电子加速构件。 此外，中性束源包括泵送系统，其能够使用中性束源用于诸如蚀刻工艺的半导体处理应用。

    Method of using a wafer-thickness-dependant profile library
    110.
    发明授权
    Method of using a wafer-thickness-dependant profile library 有权
    使用晶片厚度依赖型谱库的方法

    公开(公告)号：US07571074B2

    公开(公告)日：2009-08-04

    申请号：US11668690

    申请日：2007-01-30

    Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    IPC: G01B11/02 ,  G06F17/40

    CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

    Abstract: A method for facilitating an ODP (optical digital profile) measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on the wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying. The real time wafer characteristic data may be real time wafer thickness data.

    Abstract translation: 一种用于促进半导体晶片的ODP（光学数字图形）测量的方法。 该方法包括获得晶片上的测量位置的实时晶片特性数据，并从晶片的测量位置内的结构检测测得的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。 实时晶片特性数据可以是实时晶片厚度数据。

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