公开(公告)号：US20210184079A1

公开(公告)日：2021-06-17

申请号：US17175224

申请日：2021-02-12

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

公开(公告)号：US20210167020A1

公开(公告)日：2021-06-03

申请号：US16702222

申请日：2019-12-03

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Lifang Xu ,  Rita J. Klein ,  Xiao Li ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

公开(公告)号：US20210134825A1

公开(公告)日：2021-05-06

申请号：US17145131

申请日：2021-01-08

Applicant: Micron Technology, Inc.

Inventor： Haitao Liu ,  Kamal M. Karda ,  Gurtej S. Sandhu ,  Sanh D. Tang ,  Akira Goda ,  Lifang Xu

IPC: H01L27/11573 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  G11C16/08 ,  H01L23/532 ,  H01L21/28

Abstract: A memory can have a stacked memory array that can have a plurality of levels of memory cells. Each respective level of memory cells can be commonly coupled to a respective access line. A plurality of drivers can be above the stacked memory array. Each respective driver can have a monocrystalline semiconductor with a conductive region coupled to a respective access line.

公开(公告)号：US20210134736A1

公开(公告)日：2021-05-06

申请号：US16674644

申请日：2019-11-05

Applicant: Micron Technology, Inc.

Inventor： Jivaan Kishore Jhothiraman ,  John M. Meldrim ,  Lifang Xu

IPC: H01L23/00 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11573 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L21/768

Abstract: Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts—formed in at least one of the polysilicon fill material and the stack structure—deforming, misaligning, or forming electrical shorts with neighboring contacts.

公开(公告)号：US20210057441A1

公开(公告)日：2021-02-25

申请号：US16550252

申请日：2019-08-25

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Indra V. Chary ,  Justin B. Dorhout ,  Jian Li ,  Haitao Liu ,  Paolo Tessariol

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. The operative channel-material strings in the laterally-spaced memory blocks comprise part of a memory plane. An elevationally-extending wall is in the memory plane laterally-between immediately-laterally-adjacent of the memory blocks and that completely encircles an island that is laterally-between immediately-laterally-adjacent of the memory blocks in the memory plane. Other embodiments, including method are disclosed.

公开(公告)号：US10903223B2

公开(公告)日：2021-01-26

申请号：US16248248

申请日：2019-01-15

Applicant: Micron Technology, Inc.

Inventor： Haitao Liu ,  Kamal M. Karda ,  Gurtej S. Sandhu ,  Sanh D. Tang ,  Akira Goda ,  Lifang Xu

IPC: H01L27/115 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  G11C16/08 ,  H01L23/532 ,  H01L21/28 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526

Abstract: A memory can have a stacked memory array that can have a plurality of levels of memory cells. Each respective level of memory cells can be commonly coupled to a respective access line. A plurality of drivers can be above the stacked memory array. Each respective driver can have a monocrystalline semiconductor with a conductive region coupled to a respective access line.

公开(公告)号：US20200335665A1

公开(公告)日：2020-10-22

申请号：US16922940

申请日：2020-07-07

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US10756236B2

公开(公告)日：2020-08-25

申请号：US16104857

申请日：2018-08-17

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L51/52 ,  H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20170345972A1

公开(公告)日：2017-11-30

申请号：US15679958

申请日：2017-08-17

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

公开(公告)号：US20160343912A1

公开(公告)日：2016-11-24

申请号：US15227198

申请日：2016-08-03

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Lifang Xu

IPC: H01L33/40 ,  H01L33/42 ,  H01L33/00 ,  H01L33/56 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/502 ,  H01L33/56 ,  H01L2933/0016

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.