公开(公告)号：US11842901B2

公开(公告)日：2023-12-12

申请号：US17843083

申请日：2022-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L29/786 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L21/385 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/518

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US11757041B2

公开(公告)日：2023-09-12

申请号：US17830376

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/78606 ,  G02F1/1368 ,  G02F1/13394 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/1251 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  H10K59/1213

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US11594642B2

公开(公告)日：2023-02-28

申请号：US17242562

申请日：2021-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The transistor includes a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second insulating film. The second insulating film includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor film and has a region thinner than the oxide semiconductor film.

公开(公告)号：US11349032B2

公开(公告)日：2022-05-31

申请号：US16772982

申请日：2018-12-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device having favorable characteristics is provided. A semiconductor device having stable electrical characteristics is provided. An island-shaped insulating layer containing an oxide is provided in contact with a bottom surface of a semiconductor layer containing a metal oxide that exhibits semiconductor characteristics. The insulating layer containing an oxide is provided in contact with a portion of the semiconductor layer to be a channel formation region and is not provided under portions to be low-resistance regions.

公开(公告)号：US11329166B2

公开(公告)日：2022-05-10

申请号：US15774930

申请日：2016-11-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Masataka Nakada ,  Masami Jintyou

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/04 ,  H01L51/50 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/12 ,  H01L27/32

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US11322442B2

公开(公告)日：2022-05-03

申请号：US16957159

申请日：2018-12-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Toshimitsu Obonai ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20210343843A1

公开(公告)日：2021-11-04

申请号：US17370221

申请日：2021-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C23C14/08 ,  C23C14/58 ,  H01L29/778 ,  H01L29/786 ,  H01L27/12 ,  C04B35/453 ,  C04B35/622

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US11158745B2

公开(公告)日：2021-10-26

申请号：US16732425

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/425 ,  H01L29/49 ,  H01L27/12 ,  H01L21/473 ,  H01L21/768

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

公开(公告)号：US11094804B2

公开(公告)日：2021-08-17

申请号：US16429194

申请日：2019-06-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L29/423

Abstract: Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

公开(公告)号：US11063066B2

公开(公告)日：2021-07-13

申请号：US16420858

申请日：2019-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yasutaka Nakazawa ,  Yukinori Shima ,  Masami Jintyou ,  Masayuki Sakakura ,  Motoki Nakashima

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/66 ,  H01L29/49 ,  H01L21/02

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.