公开(公告)号：USD655256S1

公开(公告)日：2012-03-06

申请号：US29379471

申请日：2010-11-19

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

设计人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

公开(公告)号：US20120031324A1

公开(公告)日：2012-02-09

申请号：US13115560

申请日：2011-05-25

申请人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

发明人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

IPC分类号： C30B25/02

CPC分类号： H01L21/02389 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates 10 including main surfaces 10m having a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substrates 10 so as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substrates 10 oppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystal 20 on the main surfaces 10m of the plurality of tile substrates arranged.

摘要翻译： 本发明提供一种通过使用多个瓦片基板来生长具有大尺寸并且具有少量形成在晶体的主表面中的凹坑的III族氮化物晶体的方法。 用于生长III族氮化物晶体的方法包括制备多个瓦片基板10的步骤，该瓦片基板10包括允许多个瓦片基板的二维密封的具有三角形形状的主表面10m或凸形四边形; 将多个瓦片基板10布置成二维紧密堆叠的步骤，使得在多个瓦片基板10的顶点彼此相对的任何点处，3个或更少的顶点彼此相对; 以及在布置的多个瓦片基板的主表面10m上生长III族氮化物晶体20的步骤。

公开(公告)号：US20120012862A1

公开(公告)日：2012-01-19

申请号：US13258801

申请日：2010-09-29

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/187 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate.

摘要翻译： 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 并且通过在基底基板和SiC基板之间形成由导电体的碳制成的中间层，将基底基板与SiC基板相互连接。

公开(公告)号：US20110215440A1

公开(公告)日：2011-09-08

申请号：US13109987

申请日：2011-05-17

申请人： Shinsuke Fujiwara

发明人： Shinsuke Fujiwara

IPC分类号： H01L29/20

CPC分类号： C30B25/20 ,  C30B9/04 ,  C30B19/02 ,  C30B19/12 ,  C30B29/403

摘要： Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the {0001} form is minimal. A method of manufacturing the III-nitride crystal is one of: conditioning a plurality of crystal plates (10) in which the deviation in crystallographic plane orientation in any given point on the major face (10m) of the crystal plates (10), with respect to an {hkil} plane chosen exclusive of the {0001} form, is not greater than 0.5′; arranging the plurality of crystal plates (10) in a manner such that the plane-orientation deviation, with respect to the {hkil} plane, in any given point on the major-face (10m) collective surface (10a) of the plurality of crystal plates (10) will be not greater than 0.5° , and such that at least a portion of the major face (10m) of the crystal plates (10) is exposed; and growing second III-nitride crystal (20) onto the exposed areas of the major faces (10m) of the plurality of crystal plates (10).

摘要翻译： 提供具有主表面的III族氮化物晶体，其结晶面取向相对于{0001}形式选择的{hkil}平面的方差最小。 制造III族氮化物晶体的方法之一是调节多个晶体板（10），其中在晶体板（10）的主面（10m）上的任何给定点上的晶面取向偏离， 相对于{0001}形式选择的{hkil}平面不大于0.5'; 以这样的方式布置多个晶体板（10），使得相对于{hkil}平面的平面取向偏移在多个晶体板的主面（10m）集体表面（10a）上的任何给定点 晶体板（10）将不大于0.5°，并且使得晶片（10）的主面（10m）的至少一部分露出; 以及在多个晶体板（10）的主面（10μm）的暴露区域上生长第二III族氮化物晶体（20）。

公开(公告)号：US20110165764A1

公开(公告)日：2011-07-07

申请号：US13062057

申请日：2010-04-27

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/20

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A first silicon carbide substrate having a first back-side surface and a second silicon carbide substrate having a second back-side surface are prepared. The first and second silicon carbide substrates are placed so as to expose each of the first and second back-side surfaces in one direction. A connecting portion is formed to connect the first and second back-side surfaces to each other. The step of forming the connecting portion includes a step of forming a growth layer made of silicon carbide on each of the first and second back-side surfaces, using a sublimation method of supplying a sublimate thereto in the one direction.

摘要翻译： 制备具有第一背面表面的第一碳化硅衬底和具有第二背面的第二碳化硅衬底。 第一和第二碳化硅衬底被放置成在一个方向上暴露第一和第二后侧表面中的每一个。 连接部形成为将第一和第二背面彼此连接。 形成连接部分的步骤包括在第一和第二后侧表面中的每一个上形成由碳化硅制成的生长层的步骤，使用在一个方向上向其升华的升华方法。

公开(公告)号：US20100297790A1

公开(公告)日：2010-11-25

申请号：US12811567

申请日：2008-12-12

申请人： Seiji Nakahata ,  Shinsuke Fujiwara

发明人： Seiji Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L21/66

CPC分类号： H01L29/7802 ,  H01L22/12 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for producing semiconductor devices by which the fraction defective upon division into chips is reduced and the yield is enhanced.A method for producing semiconductor devices according to the present invention includes a dislocation-density evaluation step of measuring a dislocation density of sections of GaN substrates, the sections intersecting with principal surfaces of the GaN substrates, and selecting a GaN substrate in which the dislocation density is a predetermined value or less; and a division step of, after a functional device portion is epitaxially grown on the GaN substrate having been selected in the dislocation-density evaluation step, dividing the GaN substrate into chip-shaped parts.

摘要翻译： 本发明提供了一种制造半导体器件的方法，通过该方法，分割成芯片的有缺陷的分数降低，成品率提高。 根据本发明的半导体器件的制造方法包括：位错密度评价步骤，测量GaN衬底的部分的位错密度，与GaN衬底的主表面相交的部分，以及选择其中位错密度 是预定值以下; 以及分割步骤，在位错密度评估步骤中选择的GaN衬底上外延生长功能器件部分之后，将GaN衬底分成片状部分。

公开(公告)号：US20090140287A1

公开(公告)日：2009-06-04

申请号：US12324897

申请日：2008-11-28

申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida

发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida

IPC分类号： H01L29/20 ,  H01L33/00

CPC分类号： H01L29/32 ,  C30B19/02 ,  C30B23/02 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/025

摘要： Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×104 cm−2 to 3×106 cm−2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.

摘要翻译： 为了制造有利地用于发光器件的III族氮化物晶体衬底，以及结合了衬底的发光器件和制造发光器件的方法，III族氮化物晶体衬底具有表面积不小于10的主面 cm2，并且在从主外表面的外表面的外周边缘除了与其外周分隔5mm之外的主面主要区域中，总位错密度为1×104cm -2至3×106cm-2， 螺旋位错密度与总位错密度的比值为0.5以上。

公开(公告)号：US20090087645A1

公开(公告)日：2009-04-02

申请号：US12160308

申请日：2007-01-10

申请人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

发明人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

IPC分类号： C01B21/072 ,  C09D151/06

CPC分类号： H01L29/7787 ,  C30B23/00 ,  C30B29/403 ,  H01L29/2003 ,  H01L29/66462 ,  Y10T428/26

摘要： Affords methods of manufacturing AlN crystals, and AlN crystals, AlN crystal substrates, and semiconductor devices fabricated employing the AlN crystal substrates, that enable semiconductor devices having advantageous properties to be obtained. One aspect of the present invention is an AlN crystal manufacturing method including a step of growing AlN crystal onto the surface of a SiC seed-crystal substrate, and a step of picking out at least a portion of the AlN crystal lying a range of from 2 mm to 60 mm from the SiC seed-crystal substrate surface into the AlN crystal. Furthermore, other aspects are AlN crystals and AlN crystal substrates manufactured by the method, and semiconductor devices fabricated employing the AlN crystal substrates.

摘要翻译： 提供制造AlN晶体的方法，以及AlN晶体，AlN晶体衬底和使用AlN晶体衬底制造的半导体器件，使得能够获得具有有利性质的半导体器件。 本发明的一个方面是一种AlN晶体制造方法，其包括在SiC籽晶衬底的表面上生长AlN晶体的步骤，以及选择至少一部分AlN晶体的步骤，其范围为2 从SiC晶种衬底表面到60nm的AlN晶体。 此外，其他方面是通过该方法制造的AlN晶体和AlN晶体衬底，以及使用AlN晶体衬底制造的半导体器件。

公开(公告)号：US20060027896A1

公开(公告)日：2006-02-09

申请号：US11161436

申请日：2005-08-03

申请人： Shinsuke Fujiwara ,  Seiji Nakahata

发明人： Shinsuke Fujiwara ,  Seiji Nakahata

IPC分类号： H01L29/15

CPC分类号： C30B25/08 ,  C30B25/02 ,  C30B29/403

摘要： Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula AlxGa1-xN (0≦x≦1), and is characterized by having a fracture toughness of (1.2−0.7x) MPa·m1/2 or greater and a surface area of 20 cm2, or, if the substrate has a composition represented by the formula AlxGa1-xN (0.5≦x≦1), by having an absorption coefficient of 50 cm−1 or less in a 350 to 780 nm total wavelength range.

摘要翻译： AlGaN单晶衬底的断裂韧性提高，吸收系数降低。 氮化物半导体单晶衬底具有由式Al x Ga 1-x N（0 <= x <= 1）表示的组成，其特征在于具有 （1.2-0.7倍）MPa.m 1/2以上的断裂韧性和20cm 2的表面积，或者如果基材具有代表性的组成 通过具有50cm -1的吸收系数的方式通过Al x 1 Ga 1-x N（0.5 <= x <= 1） > 350nm至780nm的总波长范围。

公开(公告)号：US4777875A

公开(公告)日：1988-10-18

申请号：US6311

申请日：1987-01-15

申请人： Shinsuke Fujiwara ,  Kunio Endo

发明人： Shinsuke Fujiwara ,  Kunio Endo

IPC分类号： B41J9/127 ,  B41J9/36 ,  B41J3/10

CPC分类号： B41J9/127 ,  B41J9/36

摘要： A printer head bank in which an assembly of yoke, magnet, coils and printing board are encapsulated in a resin forming the head carriage to which the typing hammers are attached.

摘要翻译： 一种打印头组件，其中轭，磁体，线圈和印刷板的组件被封装在形成打字锤所附着的头部托架的树脂中。