公开(公告)号：US20050227392A1

公开(公告)日：2005-10-13

申请号：US11148771

申请日：2005-06-09

申请人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

发明人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00 ,  H01L29/22

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

摘要翻译： 当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构） 具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底 使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

公开(公告)号：US20050048682A1

公开(公告)日：2005-03-03

申请号：US10917514

申请日：2004-08-13

申请人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01S5/02 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S2301/173

摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.

摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。

公开(公告)号：US06773504B2

公开(公告)日：2004-08-10

申请号：US10098501

申请日：2002-03-18

申请人： Kensaku Motoki ,  Masaki Ueno

发明人： Kensaku Motoki ,  Masaki Ueno

IPC分类号： C30B2502

CPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207

摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen, and oxygen to the C-Plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C planes on the seed crystal, maintaining the facets on the C-Plane gallium nitride crystal and allowing oxygen to infiltrate via the non-C-Plane facets to the gallium nitride crystal.

摘要翻译： 可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面 在非C面氮化镓晶种上的氮化镓晶体，并且使得氧经由非C面表面渗入生长的氮化镓晶体。 否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓 籽晶或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过 氮化镓晶体的非C面平面。

公开(公告)号：US6031252A

公开(公告)日：2000-02-29

申请号：US705330

申请日：1996-08-29

申请人： Yoshiki Miura ,  Mitsuru Shimazu ,  Kensaku Motoki ,  Takuji Okahisa ,  Masato Matsushima ,  Hisashi Seki ,  Akinori Koukitu

发明人： Yoshiki Miura ,  Mitsuru Shimazu ,  Kensaku Motoki ,  Takuji Okahisa ,  Masato Matsushima ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： C30B29/40 ,  H01L21/20 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0254 ,  H01L21/0262

摘要： An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride mixed-crystalline material containing Al, Ga, In and N. The covering layer covers at least a front surface and a back surface of the substrate. A method of preparing such an epitaxial wafer including steps of growing the covering layer at a growth temperature of at least 300.degree. C. and less than 800.degree. C. so as to cover at least the front and back surfaces of the substrate, and then annealing the substrate having the covering thereon layer at a temperature of at least 700.degree. C. and less than 1200.degree. C.

摘要翻译： 能够在高温下进行外延生长的外延晶片包括含有As或P的化合物半导体衬底和包括GaN的覆盖层; 或InN; 或AlN; 或包含Al，Ga，In和N的氮化物混晶材料。覆盖层至少覆盖基板的前表面和后表面。 一种制备这样的外延晶片的方法，包括以下步骤：在至少300℃和小于800℃的生长温度下生长覆盖层，以便至少覆盖基材的前表面和后表面，然后 在其上具有覆盖层的基板在至少700℃且小于1200℃的温度下退火。

公开(公告)号：US5834325A

公开(公告)日：1998-11-10

申请号：US864417

申请日：1997-05-28

申请人： Kensaku Motoki ,  Mitsuru Shimazu ,  Yoshiki Miura

发明人： Kensaku Motoki ,  Mitsuru Shimazu ,  Yoshiki Miura

IPC分类号： C30B29/40 ,  H01L21/205 ,  H01L33/00 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/0079 ,  Y10S148/113

摘要： A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity of light absorption is reduced as compared with the case of leaving the overall GaAs substrate. Thus, a light emitting device having high blue luminance is obtained.